Electrical Characterization of Photosensitive Germanium Doped Tungsten Oxide Film Produced by Sputtering Method

Year 2022, , 964 - 975, 15.12.2022

Mustafa Şükrü Kurt

https://doi.org/10.31466/kfbd.1178929

Abstract

A p-n type Al/Si/WOx(3.1% Ge) junction was obtained by growing 3.1% Ge doped WOx layer on an Al contacted p-type Si substrate using magnetron sputtering method. The results of SEM and EDS analysis show that the surface has a smooth and homogeneous structure and consists of 93.7% W, 3.1% Ge and 3.3% O, respectively. In order to examine the electrical properties, Ag dot contacts were deposited on the produced active layer and Al/Si/WOx(3.1%Ge)/Ag structure was obtained. Diode parameters (series resistance, barrier height, diode ideality factor, reverse saturation current) were investigated by making I-V measurements in the ±4V potential range under dark and different light intensities of the produced heterojunction. It was observed that the diode ideality factor and series resistance have values between 3.7-5.68 and 0-20Ω, respectively, and the barrier height have values between 0.12-0.18 eV, and the reverse saturation current changed depending on the light intensity. The heterojunction demonstrated standart photodiode behaviour, with a maximum fill factor value of 0.2660 under 60mW/cm2 light intensity.

Keywords

Tungsten Oxide-Germanium, Metal-oxide semiconductor, Photodiode, p-n type junction, I-V

Saçtırma Yöntemi ile Üretilen Işığa Duyarlı Germanyum Katkılı Tungsten Oksit Filmin Elektriksel Karakterizasyonu

Abstract

Magnetron saçtırma yöntemi kullanılarak Al kontaklı p-tipi Si altlık üzerine %3.1 Ge katkılı WOx katmanı büyütülerek p-n tipi Al/Si/WOx(%3.1Ge) eklemi elde edilmiştir. SEM ve EDS analizi sonuçları yüzeyin pürüzsüz ve homojen bir yapıya sahip olduğunu ve sırasıyla %93.7 W, 3.1% Ge ve 3.3% O oranlarından oluştuğunu göstermektedir. Elektriksel özelliklerin incelenebilmesi için üretilen aktif tabaka üzerine Ag nokta kontaklar atılarak sonuçta Al/Si/WOx(%3.1Ge)/Ag yapısı elde edilmiştir. Üretilen heteroeklemin karanlık ve değişik ışık şiddetleri altında ±4V potansiyel aralığında I-V ölçümleri yapılarak diyot parametreleri (seri direnç, engel yüksekliği, diyot idealite faktörü, ters doyum akımı) incelenmiştir. Diyot idealite faktörünün ve seri direncin sırasıyla 3.7-5.68 ve 0-20Ω arasında, engel yüksekliğinin ise 0.12-0.18 eV arasında değerler aldığı ve ters doyma akımının ışık şiddetine bağlı değişim gösterdiği saptanmıştır. Heteroeklemi'nin tipik fotodiyot davranışı gösterdiği ve 60mW/cm2 ışık şiddeti altında maksimum doldurma faktörü değerinin 0.2660 olduğu belirlendi.    

Keywords

Tungsten Oksit-Germanyum, Metal-oksit yarıiletken, Fotodiyot, p-n tip eklem, I-V, Tungsten Oxide-Germanium, Metal-oxide semiconductor, Photodiode, p-n type junction

References

• Aktas, S. (2022). Electrical characterisation of photosensitive Si/W–Ge oxide composite heterojunction. Optical Materials, 132, 112839.
• Aktas, S., ve Ünal, F. (2022). Metal Oksit ve Organik Bazlı Çoklu Heteroeklemin Yapısal ve Elektriksel Özelliklerinin İncelenmesi. Karadeniz Fen Bilimleri Dergisi, 12(1), 508-520.
• Al-Ta’ii, H. M. J., Periasamy, V., ve Amin, Y. M. (2016). Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. PloS One, 11(1), e0145423.
• Aldemir, D. A., Kökce, A., ve Özdemir, A. F. (2017). Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması. SAÜ Fen Bilimleri Enstitüsü Dergisi, 21(6), 1286-1292
• Amarsingh Bhabu, K., Kalpana Devi, A., Theerthagiri, J., Madhavan, J., Balu, T., ve Rajasekaran, T. R. (2017). Tungsten doped titanium dioxide as a photoanode for dye sensitized solar cells. Journal of Materials Science: Materials in Electronics, 28(4), 3428-3439
• Arunadevi, R., Kavitha, B., Rajarajan, M., ve Suganthi, A. (2019). Sonochemical synthesis and high-efficient solar-light-driven photocatalytic activity of novel cobalt and manganese codoped tungsten oxide nanoparticles. Chemical Physics Letters. 715, 252-262.
• Aslan, N., Kurt, M. Ş., ve Mehmet Koç, M. (2022). Morpho-structural and optoelectronic properties of diamond like carbon–germanium (DLC-Ge) composite thin films produced by magnetron sputtering. Optical Materials, 126, 112229.
• Bartesaghi, D., Pérez, I. D. C., Kniepert, J., Roland, S., Turbiez, M., Neher, D., ve Koster, L. J. A. (2015). Competition between recombination and extraction of free charges determines the fill factor of organic solar cells. Nature Communications, 6(1), 7083.
• Bourdin, Gaudon, Weill, Duttine, Gayot, Messaddeq, ve Cardinal. (2019). Nanoparticles (NPs) of WO3-x Compounds by Polyol Route with Enhanced Photochromic Properties. Nanomaterials, 9(11), 1555.
• Çetinkaya, H. G., Tecimer, H., Uslu, H., ve Altındal, Ş. (2013). Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures. Current Applied Physics, 13(6), 1150-1156.
• Cheung, S. K., ve Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied Physics Letters. 49, 85.
• Dastan, D. (2017). Effect of preparation methods on the properties of titania nanoparticles: solvothermal versus sol–gel. Applied Physics A: Materials Science and Processing. 123, 699.
• Deb, S. K. (2008). Opportunities and challenges in science and technology of WO3 for electrochromic and related applications. Solar Energy Materials and Solar Cells. 9(2), 245-258
• Farag, A. A. M. (2009). Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy. Applied Surface Science, 255(6), 3493-3498.
• Hassel, A. W., Milenkovic, S., ve Smith, A. J. (2010). Large scale synthesis of single crystalline tungsten nanowires with extreme aspect ratios. Physica Status Solidi (A) Applications and Materials Science. 207(4), 858-863.
• Hoel, A., Reyes, L. F., Heszler, P., Lantto, V., ve Granqvist, C. G. (2004). Nanomaterials for environmental applications: novel WO3-based gas sensors made by advanced gas deposition. Current Applied Physics, 4(5), 547-553.
• Jafari, A., Alam, M. H., Dastan, D., Ziakhodadadian, S., Shi, Z., Garmestani, H., Weidenbach, A. S., ve Ţălu, Ş. (2019). Statistical, morphological, and corrosion behavior of PECVD derived cobalt oxide thin films. Journal of Materials Science: Materials in Electronics. 30, 21185-21198
• Jiang, Z., Yu, Y., Wang, Y., Zhou, D., Deng, W., ve Zhang, X. (2021). High-power Si-Ge photodiode assisted by doping regulation. Optics Express, 29(5), 7389.
• Kampen, T. U., Park, S., ve Zahn, D. R. T. (2002). Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer. Applied Surface Science, 190(1-4), 461-466.
• Khare, C., Sliozberg, K., Meyer, R., Savan, A., Schuhmann, W., ve Ludwig, A. (2013). Layered WO3/TiO2 nanostructures with enhanced photocurrent densities. International Journal of Hydrogen Energy, 38(36), 15954-15964.
• Koltypin, Y., Nikitenko, S. I., ve Gedanken, A. (2002). The sonochemical preparation of tungsten oxide nanoparticles. Journal of Materials Chemistry. 12, 1107-1110.
• Kurt, M. S., Aktas, S., Unal, F., Kabaer, M. (2022). Optical and Electrical Characterization of a ZnO/Coronene-Based Hybrid Heterojunction Photodiode. Journal of Electronic Materials. 1-12
• Michel, J., Liu, J., ve Kimerling, L. C. (2010). High-performance Ge-on-Si photodetectors. Nature Photonics. 4(8), 527-534.
• Nimittrakoolchai, O. U., ve Supothina, S. (2008). High-yield precipitation synthesis of tungsten oxide platelet particle and its ethylene gas-sensing characteristic. Materials Chemistry and Physics. 112(1), 270-274.
• Qiu, H., Lu, Y. F., ve Mai, Z. H. (2002). Electrochromic writing and erasing on tungsten oxide films in air by scanning tunneling microscopy. Journal of Applied Physics. 91, 440.
• Reddy, V. R., Prasad, C. V., Janardhanam, V., ve Choi, C.-J. (2021). Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer. Journal of Materials Science: Materials in Electronics, 32(6), 8092-8105.
• Shetty, A., Roul, B., Mukundan, S., Mohan, L., Chandan, G., Vinoy, K. J., ve Krupanidhi, S. B. (2015). Temperature dependent electrical characterisation of Pt/HfO 2 /n-GaN metal-insulator-semiconductor (MIS) Schottky diodes. AIP Advances, 5(9), 097103.
• Sliozberg, K., Schäfer, D., Erichsen, T., Meyer, R., Khare, C., Ludwig, A., ve Schuhmann, W. (2015). High-Throughput Screening of Thin-Film Semiconductor Material Libraries I: System Development and Case Study for Ti-W-O. ChemSusChem. 8(7), 1270-1278.
• Tan, G.-L., Tang, D., Dastan, D., Jafari, A., Silva, J. P. B., ve Yin, X.-T. (2021). Effect of heat treatment on electrical and surface properties of tungsten oxide thin films grown by HFCVD technique. Materials Science in Semiconductor Processing, 122, 105506.
• Terohid, S. A. A., Heidari, S., Jafari, A., ve Asgary, S. (2018). Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire. Applied Physics A, 124(8), 567.
• Tung, R. T. (1992). Electron transport at metal-semiconductor interfaces: General theory. Physical Review B. 45, 13509.
• Ünal, F. (2022). Investigation of Diode Parameters of Photoconductive and Photovoltaic p-Type Si/Ge-Doped WOx Heterojunction. Journal of Electronic Materials, 1-13.
• Ünal, F. (2021). Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method. Karadeniz Fen Bilimleri Dergisi. 11(1), 297-306.
• Ünal, F., ve Aktaş, S. (2022). Işığa Duyarlı n-tipi Katkılı Metal oksit/p-tipi Si Heteroekleminin Elektriksel Karakterizasyonu. Journal of the Institute of Science and Technology, 12(3), 1506-1517.
• Ünal, F., Demir, S., ve Mammadov, H. (2021). Structural, surface morphological, optical and electrical properties of InxSey thin films, an absorber layer for photovoltaic cells fabricated by M-CBD method using different variables. Turkish Journal of Chemistry. 45(6), 1761-1773.
• Unal, F., Kurt, M. S., ve Durdu, S. (2022). Investigation of the effect of light on the electrical parameters of Si/TiO2 heterojunctions produced by anodic oxidation on p-type Si wafer. Journal of Materials Science: Materials in Electronics. 33, 15834-15847.
• Zheng, H., Ou, J. Z., Strano, M. S., Kaner, R. B., Mitchell, A., ve Kalantar-zadeh, K. (2011). Nanostructured Tungsten Oxide - Properties, Synthesis, and Applications. Advanced Functional Materials, 21(12), 2175-2196.
• Zurnacı, M., Ünal, F., Demir, S., Gür, M., Şener, N., ve Şener, İ. (2021). Synthesis of a new 1,3,4-thiadiazole-substituted phenanthroimidazole derivative, its growth on glass/ITO as a thin film and analysis of some surface and optoelectronic properties. New Journal of Chemistry, 45(48), 22678-22690.