Fotovoltaik Hücrelerde Pencere Tabakası Olarak Kullanılan InSe İnce Filminin Cam/Gase Alt Tabanı Üzerine M-CBD Yöntemiyle Büyütülmesi ve Bazı Optiksel ve Elektriksel Özelliklerinin İncelenmesi

Year 2021, Volume: 11 Issue: 1, 297 - 306, 15.06.2021

Fatih Ünal

https://doi.org/10.31466/kfbd.930609

Cited By: 7

https://izlik.org/JA59TP79GZ

Abstract

InSe ince filmi başarılı bir şekilde cam/GaSe alt tabanı üzerine modifiye edilmiş kimyasal banyo depolama (M-CBD) yöntemiyle büyütülmüştür ve üretilen filmlerin bir gurubu atmosfer ortamında bir saat 80 °C’de tavlanmıştır. Üretilen ve tavlanan filmlerin enerji band aralıkları sırasıyla 1,89 eV, 1,15 eV olarak belirlenmiştir. Üretilen ve tavlanan filmlerin 400-700 nm’de yüzde geçirgenlik değerleri sırasıyla %0.65, %4.46 ve %11,02, %10,35 olduğu görülmüştür. Farklı sıcaklıklarda ölçülen I-V krakterizasyonlarında sıcaklığın artmasıyla özdirencin azaldığı, iletkenliğin arttığı görülmüştür. Düşük sıcaklık bölgesinde aktivasyon enerjisi 0,05 eV iken, yüksek sıcaklık bölgesinde 0,6 eV olduğu gözlemlenmiştir.

Keywords

InSe , GaSe , M-CBD , İnce film

Thanks

Katkılarından dolayı Prof. Dr. Hasan MAMMADOV'a teşekkür ederim.

Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

https://izlik.org/JA59TP79GZ

Abstract

The InSe thin film was successfully grown on a glass/GaSe substrate using the modified chemical bath deposition (M-CBD) method and a group was annealed one hour at 80 °C in atmospheric conditions. The energy band gap (Eg) values of the as-deposited and annealed films were defined 1,89 eV and 1,15 eV, respectively. The transmitance values (%) of the as-deposited and annealed films were asigned %0.65, %4.46 and %11,02, %10,35 at 400 and 700 nm, respectively. The I-V characteristics of the device at different temperatures was examined, the resistivity decreased and the conductivity increased with the increasing temperature. The activation energy in low temperature region was defined 0,05 eV, while it was defined 0.6 eV in high temperature region.

Keywords

InSe , GaSe , M-CBD , Thin film

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