Optical Properties of AlInN/AlN HEMTs in Detail

Year 2022, , 521 - 529, 15.12.2022

Ömer Akpınar , Ahmet Bilgili Mustafa Öztürk , Süleyman Özçelik

https://doi.org/10.31466/kfbd.954421

Abstract

In this study, the optical properties of AlInN/AlN high electron mobility transistor (HEMT) structure, grown on c-oriented sapphire with Metal-Organic Chemical Vapor Deposition (MOCVD) technique, being investigated. Optical characterization is made Kubelka- Munk method. Transmittance, absorbance, and reflectance are investigated in detail. Also, the Kubelka-Munk theory is employed to determine the forbidden energy band gap of InN by using special functions. The energy band gap obtained by this method was compared.

Keywords

MOCVD, HEMT, AlInN/InN, Transmittance, Kubelka-Munk Method, Mobilite

Supporting Institution

Presidency Strategy and Budget Directorate

Project Number

2016K121220

AlInN/AlN HEMT’in Detaylı Optik Özellikleri

Abstract

Bu çalışmada, Metal Organik Kimyasal Buhar Biriktirme (MOCVD) tekniği ile c-yönelimli safir üzerinde büyütülen AlInN/AlN yüksek elektron hareketli transistör (HEMT) yapısının optik özellikleri incelenmiştir. Optik karakterizasyon Kubelka-Munk yöntemiyle yapılmıştır. Geçirgenlik, absorbans, yansıma detaylı olarak incelenmiştir. Ayrıca özel fonksiyonlar kullanarak InN'nin yasak enerji bant aralığını belirlemek için Kubelka-Munk teorisinden yararlanılmıştır. Bu yöntemle elde edilen enerji bant aralığının karşılaştırılması yapılmıştır.

Keywords

MOCVD, HEMT, AlInN/InN, Geçirgenlik, Kubelka-Munk Metodu, Mobilite

Project Number

2016K121220

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