Dereceli ve derecesiz InGaN/GaN MQW’lerin dielektrik özellikleri

Year 2021, Volume: 11 Issue: 1, 214 - 221, 15.06.2021

Ahmet Kursat Bılgılı Mustafa Ozturk Süleyman Özçelik Adem Tataroglu

https://doi.org/10.31466/kfbd.841375

Abstract

Bu çalışmada, Metal organik kimyasal buhar biriktirme(MOCVD) metoduyla safir (Al2O3) üzerine büyütülen dereceli ve derecesiz InGaN/GaN MQW’lerin dielektrik özellikleri incelendi. Dereceli tabakanın MQW’nin karakteristikleri üzerine etkisini fark edebilmek için bazı GaN tabakalar In aşılanarak büyütülmüştür. Filmlerin dielektrik fonksiyonu Swanepoel zarf metodu ile belirlenmiştir. Filmlerin gerçel ve imajiner dielektrik katsayıları, kırılma indisi ve soğurma katsayıları kullanılarak hesaplanmıştır. Dereceli ve derecesiz örnekler için kırılma indisi değerlerindeki farklılıklar tartışılmıştır. Dielektrik fonksiyonunun belirlenmesi sırasında, her iki numune için kompleks ve imajiner dielektrik sabitlerinin foton enerjisine göre değişimleri gösterilmiştir

Keywords

Swanepoel zarf metodu, dereceli, derecesiz, InGaN

Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs

Abstract

In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded layer effect on characteristics of MQWs some of GaN layers are grown by doping In atoms. Dielectric function of films are determined by Swanepoel envelope method. Real and imaginer dielectric coefficient of the films are calculated by using refraction index and extinction coefficient. Differences in refraction index values are discussed for graded and non-graded samples. During determination of dielectric function variations of complex and imaginer dielectric coefficients with photon energy are shown for both samples

Keywords

Swanepoel envelope method, graded, non-graded, InGaN

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