Fotovoltaik Hücrelerde Pencere Tabakası Olarak Kullanılan InSe İnce Filminin Cam/Gase Alt Tabanı Üzerine M-CBD Yöntemiyle Büyütülmesi ve Bazı Optiksel ve Elektriksel Özelliklerinin İncelenmesi

Year 2021, Volume: 11 Issue: 1, 297 - 306, 15.06.2021

Fatih Ünal

https://doi.org/10.31466/kfbd.930609

Cited By: 6

Abstract

InSe ince filmi başarılı bir şekilde cam/GaSe alt tabanı üzerine modifiye edilmiş kimyasal banyo depolama (M-CBD) yöntemiyle büyütülmüştür ve üretilen filmlerin bir gurubu atmosfer ortamında bir saat 80 °C’de tavlanmıştır. Üretilen ve tavlanan filmlerin enerji band aralıkları sırasıyla 1,89 eV, 1,15 eV olarak belirlenmiştir. Üretilen ve tavlanan filmlerin 400-700 nm’de yüzde geçirgenlik değerleri sırasıyla %0.65, %4.46 ve %11,02, %10,35 olduğu görülmüştür. Farklı sıcaklıklarda ölçülen I-V krakterizasyonlarında sıcaklığın artmasıyla özdirencin azaldığı, iletkenliğin arttığı görülmüştür. Düşük sıcaklık bölgesinde aktivasyon enerjisi 0,05 eV iken, yüksek sıcaklık bölgesinde 0,6 eV olduğu gözlemlenmiştir.

Keywords

InSe, GaSe, M-CBD, İnce film

Thanks

Katkılarından dolayı Prof. Dr. Hasan MAMMADOV'a teşekkür ederim.

Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

Abstract

The InSe thin film was successfully grown on a glass/GaSe substrate using the modified chemical bath deposition (M-CBD) method and a group was annealed one hour at 80 °C in atmospheric conditions. The energy band gap (Eg) values of the as-deposited and annealed films were defined 1,89 eV and 1,15 eV, respectively. The transmitance values (%) of the as-deposited and annealed films were asigned %0.65, %4.46 and %11,02, %10,35 at 400 and 700 nm, respectively. The I-V characteristics of the device at different temperatures was examined, the resistivity decreased and the conductivity increased with the increasing temperature. The activation energy in low temperature region was defined 0,05 eV, while it was defined 0.6 eV in high temperature region.

Keywords

InSe, GaSe, M-CBD, Thin film

References

• Boukhvalov, D. W., B. Gurbulak, S. Duman, L. Wang, A. Politano, L. S. Caputi, G. Chiarello and A. Cupolillo (2017). "The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications." Nanomaterials 7(11).
• Boukhvalov, D. W., B. Gurbulak, S. Duman, L. Wang, A. Politano, L. S. Caputi, G. Chiarello and A. Cupolillo (2017). "The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications." Nanomaterials 7(11).
• Camara, M. O. D., A. Mauger and I. Devos (2002). "Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions." Physical Review B 65(20).
• Camara, M. O. D., A. Mauger and I. Devos (2002). "Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions." Physical Review B 65(20).
• Camara, M. O. D., A. Mauger and I. Devos (2002). "Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach." Physical Review B 65(12).
• Camara, M. O. D., A. Mauger and I. Devos (2002). "Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach." Physical Review B 65(12).
• Chaudhary, V., N. Kumar and A. K. Singh (2019). "Solubility dependent trap density in poly (3-hexylthiophene) organic Schottky diodes at room temperature." Synthetic Metals 250: 88-93.
• Chaudhary, V., N. Kumar and A. K. Singh (2019). "Solubility dependent trap density in poly (3-hexylthiophene) organic Schottky diodes at room temperature." Synthetic Metals 250: 88-93.
• Choi, I. H. and P. Y. Yu (2003). "Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor." Journal of Applied Physics 93(8): 4673-4677.
• Choi, I. H. and P. Y. Yu (2003). "Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor." Journal of Applied Physics 93(8): 4673-4677.
• Dugan, S., M. M. Koç and B. Coşkun (2020). "Structural, electrical and optical characterization of Mn doped CdO photodiodes." Journal of Molecular Structure 1202: 127235. El-Sayed, S. M. (2003). "Optical investigations of the indium selenide glasses." Vacuum 72(2): 169-175.
• Gopal, S., C. Viswanathan, B. Karunagaran, S. K. Narayandass, D. Mangalaraj and J. Yi (2005). "Preparation and characterization of electrodeposited indium selenide thin films." Crystal Research and Technology 40(6): 557-562.
• Gopal, S., C. Viswanathan, M. Thamilselvan, K. Premnazeer, S. K. Narayandass and D. Mangalaraj (2004). "Conduction studies on electrodeposited indium selenide thin films." Ionics 10(3-4): 300-303.
• Han, G., Z. G. Chen, J. Drennan and J. Zou (2014). "Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances." Small 10(14): 2747-2765.
• Ho, C. H. and Y. J. Chu (2015). "Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals." Advanced Optical Materials 3(12): 1750-1758.
• Igasaki, Y. and T. Fujiwara (1996). "The preparation of highly oriented InSe films by electrodeposition." Journal of Crystal Growth 158(3): 268-275.
• Jin-Ho Park, Mohammad Afzaal, Madeleine Helliwell, Mohmmad A. Malik, Paul O’Brien and J. Raftery (2003). "Chemical Vapor Deposition of Indium Selenide and Gallium Selenide Thin Films from Mixed Alkyl/Dialkylselenophosphorylamides." Chem. Mater. 15: 4205-4210.
• Julien, C., N. Benramdane and J. P. Guesdon (1990). "Transformation steps of structure in flash-deposited films of a-InSe." Semiconductor Science and Technology 5(8): 905-910.
• Julien, C., A. Chevy and D. Siapkas (1990). "Optical properties of In2Se3 phases." physica status solidi (a) 118(2): 553-559.
• Kobbi, B. and N. Kesri (2004). "Physico-chemical and electrical properties of InSe films." Vacuum 75(2): 177-182.
• Kumar, V., S. C. Jain, A. K. Kapoor, J. Poortmans and R. Mertens (2003). "Trap density in conducting organic semiconductors determined from temperature dependence of J-V characteristics." Journal of Applied Physics 94(2): 1283-1285.
• Lang, O., A. Klein, R. Schlaf, T. Löher, C. Pettenkofer, W. Jaegermann and A. Chevy (1995). "InSeGaSe heterointerfaces prepared by Van der Waals epitaxy." Journal of Crystal Growth 146(1): 439-443.
• Lokhande, C. D. and S. H. Pawar (1989). "Electrodeposition of Thin Film Semiconductors." physica status solidi (a) 111(1): 17-40.
• Mudd, G. W., S. A. Svatek, T. Ren, A. Patane, O. Makarovsky, L. Eaves, P. H. Beton, Z. D. Kovalyuk, G. V. Lashkarev, Z. R. Kudrynskyi and A. I. Dmitriev (2013). "Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement." Advanced Materials 25(40): 5714-+.
• Pathan, H. M., S. S. Kulkarni, R. S. Mane and C. D. Lokhande (2005). "Preparation and characterization of indium selenide thin films from a chemical route." Materials Chemistry and Physics 93(1): 16-20.
• Politano, A., D. Campi, M. Cattelan, I. Ben Amara, S. Jaziri, A. Mazzotti, A. Barinov, B. Gurbulak, S. Duman, S. Agnoli, L. S. Caputi, G. Granozzi and A. Cupolillo (2017). "Indium selenide: an insight into electronic band structure and surface excitations." Scientific Reports 7.
• Tauc, J. (1968). "Optical properties and electronic structure of amorphous Ge and Si." Materials Research Bulletin 3(1): 37-46.
• ÜNAL, F., T. İZGİ, B. BARIŞ and S. KARADENİZ (2020). "Cam/ITO/CIS/Rubrene Heteroekleminin Yüzey ve Optiksel Özelliklerinin İncelenmesi." Karadeniz Fen Bilimleri Dergisi 10.
• Yakuphanoglu, F. (2008). "Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors." Sensors and Actuators A: Physical 141(2): 383-389.
• Yetim, N. K., N. Aslan, A. Sarıoğlu, N. Sarı and M. M. Koç (2020). "Structural, electrochemical and optical properties of hydrothermally synthesized transition metal oxide (Co3O4, NiO, CuO) nanoflowers." Journal of Materials Science: Materials in Electronics 31(15): 12238-12248.
• Yilmaz, S. (2008). "TETRAGONAL (Bi2O3)1-x(Ln2O3)x İKİLİ SİSTEMLERİNDE İYONİK İLETKENLİĞİN İNCELENMESİ VE KATKI CİNSİNE BAĞLILIĞI (Ln=Dy, Eu, Sm)." Erciyes Üniversitesi Fen Bilimleri Enstitüsü Dergisi 24: 212-215.
• Yuksek, M., H. G. Yaglioglu, A. Elmali, E. M. Aydin, U. Kurum and A. Ates (2014). "Nonlinear and saturable absorption characteristics of Ho doped InSe crystals." Optics Communications 310: 100-103.
• Zhou, J., J. Shi, Q. Zeng, Y. Chen, L. Niu, F. Liu, T. Yu, K. Suenaga, X. Liu, J. Lin and Z. Liu (2018). "InSe monolayer: synthesis, structure and ultra-high second-harmonic generation." 2D Materials 5(2).
• Zhou, J. D., J. Shi, Q. S. Zeng, Y. Chen, L. Niu, F. C. Liu, T. Yu, K. Suenaga, X. F. Liu, J. H. Lin and Z. Liu (2018). "InSe monolayer: synthesis, structure and ultra-high second-harmonic generation." 2d Materials 5(2).