Ag/pentasen/Cu MIM Yapısının Optoelektronik Özelliklerinin İncelenmesi

Year 2023, Volume: 13 Issue: 4, 1798 - 1806, 15.12.2023

Fatih Ünal

https://doi.org/10.31466/kfbd.1336879

Abstract

Ag/pentasen/Cu MIM yapısı (metal-insulator-metal) termal buharlaştırma yöntemi kullanılarak başarılı bir şekilde üretilmiştir. Üretilen yapının temel I-V karakterizasyonu karanlık ve 20, 40, 60, 80, 100 mW.cm-2 ışık şiddetinde incelenmiştir. MIM yapısının diyot parametreleri; idealite faktörü (n), engel yüksekliği (ϕb), ters doyma akımı (I0), seri direnç (Rs) ve Shunt direnç (Rsh) değerleri hem karanlık hem de farklı ışık şiddetlerinde belirlenmiştir. Karanlık ortamda sırasıyla n, ϕb, I0, Rs ve Rsh değerleri 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω ile 3.85 x104 Ω olduğu belirlenmiştir. Ayrıca üretilen MIM yapısının fotodedektör parametreleri; fotoakım (Iph), duyarlılık (R) ve özgül dedektiflik (D*) değerleri de farklı ışık şiddetlerinde incelenmiştir ve maksimum değerlerin sırasıyla 7.85x10-5 A, 6.09x10-3 A.W-1 ve 1.86x107 Jones olduğu belirlenmiştir.

Keywords

Metal-insulator-metal, MIM, pentasen, optoelektronik

Investigation of Optoelectronic Properties of Ag/Pentacene/Cu MIM Structure

Abstract

Ag/pentacene/Cu MIM structure (metal-insulator-metal) was successfully produced using thermal evaporation method. The basic I-V characterization of the produced structure was investigated at dark and 20, 40, 60, 80, 100 mW.cm-2 light intensity. Diode parameters of MIM structure; the ideality factor (n), barrier height (ϕb), reverse saturation current (I0), series resistance (Rs) and Shunt resistance (Rsh) values were determined at both dark and different light intensities. In dark environment, n, ϕb, I0, Rs and Rsh values were determined as 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω and 3.85 x104 Ω, respectively. In addition, the photodetector parameters of the produced MIM structure; photocurrent (Iph), sensitivity (R) and specific detective (D*) values were also investigated at different light intensities and the maximum values were determined to be 7.85x10-5 A, 6.09x10-3 A.W-1 and 1.86x107 Jones, respectively.

Keywords

Metal-insulator-metal, MIM, pentacene, optoelectronic

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