Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Year 2024, , 246 - 255, 31.12.2024

Fatih Ünal

https://doi.org/10.34186/klujes.1565394

Abstract

In this study, an InSe thin film layer was deposited onto a CdS thin film layer produced via the chemical bath deposition (CBD) method using the Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The produced heterojunction devices were divided into two groups, and one group was annealed in an ambient atmosphere at 80°C for 1 hour. The electrical characterization of both heterojunction devices was performed in the dark and under an illumination intensity of 100 mW/cm². The fundamental diode parameters (n, ϕb, Rs, I0)were analyzed using different methods. Furthermore, key photodetector parameters such as photocurrent, photoresponsivity, photosensitivity, and specific detectivity were determined for these two devices.

Keywords

InSe, CdS, Photodedector

Van der Waals tipi InSe/CdS Heteroeklem Cihazının Diyot ve Fotodedektör Karakterizasyonu

Abstract

Bu çalışmada kimyasal banyo depolama (CBD) yöntemiyle üretilen CdS ince film tabakasının üzerine InSe ince film tabakası Sıralı İyonik Tabaka Adsorpsiyon ve Reaksiyon (SILAR) yöntemiyle biriktirilmiştir. Üretilen heteroeklem cihazları iki gruba ayrılmış ve bir grup atmosfer ortamında 80 oC sıcaklıkta 1 saat tavlanmıştır. Her iki heteroeklem cihazının elektriksel karakterizasyon karanlık ve 100 mW/cm2 ışık şiddetinde gerçekleştirilmiştir. Temel diyot parametreleri (n, ϕb, Rs, I0) farklı yöntemlerle analiz edilmiştir. Ayrıca bu iki cihazın temel fotodedektör parametreleri olan fotoakım, fotoduyarlılık, fotohassasiyet ve özgün algılama değerleri belirlenmiştir.

Keywords

InSe, CdS, Fotodedektör

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