Research Article
BibTex RIS Cite

ÜÇLÜ KUANTUM TELİNDE ELEKTRİK ALAN VE LAZER ALAN’NIN ELEKTRONİK ÖZELLİKLERE ETKİSİ

Year 2020, Volume: 6 Issue: 1, 60 - 70, 30.06.2020
https://doi.org/10.34186/klujes.707248

Abstract

Üçlü kare kuyu tel sistemine dışarıdan uygulanan elektrik ve lazer alan etkisi altında hidrojenimsi yabancı atom bağlanma enerjisi hesaplandı. Bağlanma enerjisinin dışarıdan uygulanan etkilere duyarlılığı, farklı tel boyutları dikkate alınarak gösterildi. Üçlü kuantum kuyu yapısı GaAs ve AlxGa1-xAs yarı iletken malzemeden oluşturuldu. Uygulanan elektrik alan tel eksenine dik ve lazer alan tel eksenine paralel olacak şekilde seçildi. Hesaplamalarda sonlu farklar nümerik yöntemi kullanıldı. Hesaplamalar sonucu elektron bant enerjilerinin uygulanan alanlar ve tel boyutlarına nasıl bağlı olduğu gösterildi. Bu tür yapıların elektronik özelliklerinin teorik olarak anlaşılması, teknolojik yeni cihazların geliştirilmesi için ekonomik bir yöntemdir.

References

  • [1] CHUU, D.S., HSIAO,C.M., MEI, W.N., Hydrogenic impurity states inquantum dots andquanyum wires.Physical Review B, 46, 3898-3905, 1992
  • [2] BOUHASSOUNE, M., CHARROUR, R., FLİYOU, M., BRİA, D., NOUGAOUİ, A., Binding energy of shallow impurities in polar quanyum well wire. Physica B, 304, 389-397, 2001.
  • [3] CHAO, H.T., TRANTHOAI, D.B., Effect of the electric field on a hydrogenic impurity in a quantum wires. Physica B, 205, 273-278, 1995.
  • [4] ULAS, M., AKBAS, H., TOMAK, M.,Shallow donors in a quantum well wire: Electric field and geometrical affects. Phys. Stat. Sol., 200, 67-73, 1997
  • [5] MONTES, A., DUQUE, C. A, PORRAS-MONTENEGRO, N. Densityof shallow donor impurity states in rectangular cross section GaAs quantum well wires under applied electric field. J. Physc. Condens. Matter, 11, 5351-5358, 1998.
  • [6] OKAN, S. E., AKBAS, H., TOMAK, M., Binding energies of helium-like impurities in parabolik quantum wells under an applied electric field. Superlattice and Microstructures, 28, 171-176,2000.
  • [7] AKTAS, S., OKAN, S. E., AKBAS, H., Electric field effect on the binding energy of a hidrogenic impurity in a coaxial GaAs/AlxGa1-x As quantum well wires. Superlattice and Microstructures, 30, 129-134, 2001.
  • [8] AKTAS, S., Boz, F., The binding energy of a hidrogenic impurity in triple GaAl/AlxGa1-xquantum well wires under applied electric field. Trakya Univ. J.Sci., 5(2), 159-165, 2004.
  • [9] Ulas, M., ERDOĞAN, I., ÇİÇEK, E., SENTURK DALGIC, S. Self polarization in GaAs-(Ga, Al)As quantum well wires: electric field and geometrical effects. Physica E, 25, 515-520, 2005
  • [10] AKTAS, S., BİLEKKAYA, A.,, BOZ, F. K. OKAN, S. E., Electron transmission in symmetric and asymmetric double-barrier structure controlled by laser field. Superlattices and Microstructures, 85, 266-273, 2015.
  • [11] AKTAS, S.,KES, H.,BOZ, F.K., OKAN, S. E., Control of a resonant tunneling structure by intense laser field. Superlattices and Microstructures, 98, 220-227, 2016.
Year 2020, Volume: 6 Issue: 1, 60 - 70, 30.06.2020
https://doi.org/10.34186/klujes.707248

Abstract

References

  • [1] CHUU, D.S., HSIAO,C.M., MEI, W.N., Hydrogenic impurity states inquantum dots andquanyum wires.Physical Review B, 46, 3898-3905, 1992
  • [2] BOUHASSOUNE, M., CHARROUR, R., FLİYOU, M., BRİA, D., NOUGAOUİ, A., Binding energy of shallow impurities in polar quanyum well wire. Physica B, 304, 389-397, 2001.
  • [3] CHAO, H.T., TRANTHOAI, D.B., Effect of the electric field on a hydrogenic impurity in a quantum wires. Physica B, 205, 273-278, 1995.
  • [4] ULAS, M., AKBAS, H., TOMAK, M.,Shallow donors in a quantum well wire: Electric field and geometrical affects. Phys. Stat. Sol., 200, 67-73, 1997
  • [5] MONTES, A., DUQUE, C. A, PORRAS-MONTENEGRO, N. Densityof shallow donor impurity states in rectangular cross section GaAs quantum well wires under applied electric field. J. Physc. Condens. Matter, 11, 5351-5358, 1998.
  • [6] OKAN, S. E., AKBAS, H., TOMAK, M., Binding energies of helium-like impurities in parabolik quantum wells under an applied electric field. Superlattice and Microstructures, 28, 171-176,2000.
  • [7] AKTAS, S., OKAN, S. E., AKBAS, H., Electric field effect on the binding energy of a hidrogenic impurity in a coaxial GaAs/AlxGa1-x As quantum well wires. Superlattice and Microstructures, 30, 129-134, 2001.
  • [8] AKTAS, S., Boz, F., The binding energy of a hidrogenic impurity in triple GaAl/AlxGa1-xquantum well wires under applied electric field. Trakya Univ. J.Sci., 5(2), 159-165, 2004.
  • [9] Ulas, M., ERDOĞAN, I., ÇİÇEK, E., SENTURK DALGIC, S. Self polarization in GaAs-(Ga, Al)As quantum well wires: electric field and geometrical effects. Physica E, 25, 515-520, 2005
  • [10] AKTAS, S., BİLEKKAYA, A.,, BOZ, F. K. OKAN, S. E., Electron transmission in symmetric and asymmetric double-barrier structure controlled by laser field. Superlattices and Microstructures, 85, 266-273, 2015.
  • [11] AKTAS, S.,KES, H.,BOZ, F.K., OKAN, S. E., Control of a resonant tunneling structure by intense laser field. Superlattices and Microstructures, 98, 220-227, 2016.
There are 11 citations in total.

Details

Primary Language Turkish
Subjects Engineering
Journal Section Issue
Authors

Mustafa Ulaş

Havva Uyar

Publication Date June 30, 2020
Published in Issue Year 2020 Volume: 6 Issue: 1

Cite

APA Ulaş, M., & Uyar, H. (2020). ÜÇLÜ KUANTUM TELİNDE ELEKTRİK ALAN VE LAZER ALAN’NIN ELEKTRONİK ÖZELLİKLERE ETKİSİ. Kirklareli University Journal of Engineering and Science, 6(1), 60-70. https://doi.org/10.34186/klujes.707248