Nebulizer Sprey Yöntemiyle Hazırlanan Zn Katkılı SnO2 İnce Filmlerinin Geliştirilmiş Optoelektronik Özellikleri

Abstract

Bu çalışmada, katkısız ve çinko katkılı kalay oksit (SnO2) ince filmler, nebülizör püskürtme tekniği kullanılarak başarıyla üretilmiştir. Zn katkısının SnO2 ince filmlerinin yapısal, optik ve elektriksel özellikleri üzerindeki etkisi araştırılmıştır. Ayrıca, Zn katkısının SnO2'nin fotodedektör performansı üzerindeki etkisi incelenmiştir. X-ışını kırınımı (XRD) analizi, üretilen filmlerde ikincil faz olmaksızın tetragonal rutil fazının oluştuğunu ve Zn elementinin SnO2 kafesine etkili bir şekilde dahil olduğunu göstermiştir. Zn katkısı, SnO2 kristalit boyutunda bir azalmaya ve kafes sabitlerinde küçük bir artışa neden olmuştur. SnO2'nin optik bant aralığının Zn katkısıyla 3,56 eV'den 3,62 eV'ye çıktığı gözlenmiştir. Karanlık ve aydınlık koşullar altında yapılan akım-voltaj (I–V) ölçümleri, Zn katkılı SnO₂ için fotoakım ve fototepkisellikte önemli bir artış olduğunu ve değerlerin 0,08 A/W'den 0,33 A/W'ye çıktığını göstermiştir. Sonuçlar, Zn katkılı SnO2'nin optoelektrik özelliklerini iyileştirmek için potansiyel bir aday olduğunu göstermiştir.

Keywords

• İnce film
• Zn katkılı SnO2
• sisleyici sprey
• fotoiletkenlik

Enhanced Optoelectronic Properties of Zn-Doped SnO2 Thin Films Prepared by Nebulizer Spray Method

Abstract

In this study, undoped and zinc-doped tin oxide (SnO2) thin films successfully were fabricated by using nebulizer spray technique. The effect of Zn doping on the structural, optical, and electrical properties of SnO2 thin films was investigated. Furthermore, the effect of Zn doping on the photodetector performance of SnO2 was studied. X-ray diffraction (XRD) analysis showed that tetragonal rutile phase was formed without secondary phase in the produced films and indicated that Zn element was effectively incorporated into the SnO2 lattice. Zn doping resulted in a decrease in SnO2 crystallite size and a small increase in lattice constants. The optical band gap of SnO2 was observed to increase from 3.56 eV to 3.62 eV with Zn doping. Current–voltage (I–V) measurements under dark and illuminated conditions demonstrated a substantial enhancement in photocurrent and photoresponsivity for Zn-doped SnO₂, with values increasing from 0.08 A/W to 0.33 A/W. The results showed that Zn doping is a potential candidate to improve the optoelectrical properties of SnO2.

Keywords

• Thin film
• Zn doping SnO2
• nebulizer spray
• photoconductivity

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