Self-Consistent Calculation of the Potential at AlGaAs/GaAs Heterostructures

Öz

In this work, energy bant dispersion of AlGaAs/GaAs heterostructure, one of the III-V group elements of semiconductors is obtained by solving the Schrödinger and Poisson equations self-consistently for the modeling of double (bilayer) 2DEGs placed parallel. We investigate the electronic properties of AlGaAs/GaAs heterostructures as a function of the doping level in a condition where we obtain several different donor exist on one side and on both sides of the 2DEG. Besides, changes in the energy bant dispersion due to different Al concentrations are systematically investigated for these systems

Anahtar Kelimeler

• AlGaAs/GaAs heterostructure, 2DEG, Bilayer system

AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı

Öz

Bu çalışmada, birbirine paralel ikili, iki boyutlu elektron gazını (2BEG) modellemek için III-V grubu yarı iletken elementlerinden AlGaAs/GaAs heteroyapısının enerji bant dağılımı Schrödinger ve Poissson denklemlerinin öz uyumlu çözümüyle elde edilmiştir. AlGaAs/GaAs heteroyapıların elektronik özellikleri katkılamanın 2BEG’in tek ve her iki tarafına yapılması durumunda katkılamanın bir fonksiyonu olarak incelenmiştir. Ayrıca; enerji bant dağılımının Al konsantrasyonuna bağlı değişimi sistematik olarak araştırılmıştır.

Anahtar Kelimeler

• AlGaAs/GaAs heteroyapısı, 2BEG, iki kuyulu sistem

Kaynakça

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