Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Hasan Hüseyin Erkaya

EN TR

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Abstract

The research on Sı/SiGe heterojunction bipolar transisfors has led the

ultra-high-speed transıstors tha! are compatible wilh the state-of-the-art silicon

inlegraled technology. The SiGe base regions ofthese transistors are grımn selectivety

on silicon substrates. Self-aligned slructures are used to reduce the external base

resisıance aııd base colleclor parasitic capacitance. The germanium profile in Ihe base

is graded to obtain a drift ejfect to reduce the base-transil tiıne. Si/SiGe integrated

circuils for applications in optical-flber link systems and Si/SiGe microwave pover

Iransistors have been produced wilh remarkable speeds. The SiGe semıconduaor

material system, HBT slructures and fabricalion, and device performance issues are

reviewed in thispaper.

Keywords

SiGe alloys,heterojuncîion bıpolar transislors.

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Details

Primary Language

Turkish

Subjects

Electrical Engineering

Journal Section

Research Article

Authors

Hasan Hüseyin Erkaya

Publication Date

June 30, 2000

Submission Date

July 13, 2017

Acceptance Date

January 2, 2000

Published in Issue

Year 2000 Volume: 13 Number: 1

IZ

https://izlik.org/JA26NA78CP

APA

Erkaya, H. H. (2000). Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW). Eskişehir Osmangazi Üniversitesi Mühendislik Ve Mimarlık Fakültesi Dergisi, 13(1), 46-65. https://izlik.org/JA26NA78CP

AMA

1.Erkaya HH. Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW). Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi. 2000;13(1):46-65. https://izlik.org/JA26NA78CP

Chicago

Erkaya, Hasan Hüseyin. 2000. “Si/Sige/HETEROJUNCTION/BIPOLAR/TRANSISTORS/(A/REVIEW)”. Eskişehir Osmangazi Üniversitesi Mühendislik Ve Mimarlık Fakültesi Dergisi 13 (1): 46-65. https://izlik.org/JA26NA78CP.

EndNote

Erkaya HH (June 1, 2000) Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW). Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi 13 1 46–65.

IEEE

[1]H. H. Erkaya, “Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)”, Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi, vol. 13, no. 1, pp. 46–65, June 2000, [Online]. Available: https://izlik.org/JA26NA78CP

ISNAD

Erkaya, Hasan Hüseyin. “Si/Sige/HETEROJUNCTION/BIPOLAR/TRANSISTORS/(A/REVIEW)”. Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi 13/1 (June 1, 2000): 46-65. https://izlik.org/JA26NA78CP.

JAMA

1.Erkaya HH. Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW). Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi. 2000;13:46–65.

MLA

Erkaya, Hasan Hüseyin. “Si/Sige/HETEROJUNCTION/BIPOLAR/TRANSISTORS/(A/REVIEW)”. Eskişehir Osmangazi Üniversitesi Mühendislik Ve Mimarlık Fakültesi Dergisi, vol. 13, no. 1, June 2000, pp. 46-65, https://izlik.org/JA26NA78CP.

Vancouver

1.Hasan Hüseyin Erkaya. Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW). Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi [Internet]. 2000 Jun. 1;13(1):46-65. Available from: https://izlik.org/JA26NA78CP

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Abstract

Keywords

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Abstract

Keywords

References

Details

Primary Language

Subjects

Journal Section

Authors

Publication Date

Submission Date

Acceptance Date

Published in Issue

IZ

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