Sılar metodu ile hazırlanan Cu2O ince filmlerin fiziksel özellikleri

Abstract

Silar metodu kullanılarak 70 °C’de cam alttabanlar üzerine polikristal Cu₂O ince filmleri elde edildi. XRD analizleri filmlerin kübik yapıda olduğunu gösterdi ve örgü parametreleri hesaplandı. Filmlerin yüzey morfolojisi alan emisyonlu taramalı elektron mikroskobu (FE-SEM) ile görüntülendi. Filmlerin optik özelliklerini belirlemek için UV/vis spektrofotometresi kullanılmıştır. Filmlerin oda sıcaklığındaki optik geçirgenlik (% T) değerleri 300-1100 nm dalga boyu aralığında belirlenmiştir. Yarıiletken Cu₂O ince filmlerinin görünür bölgedeki optik geçirgenlik değerleri %50-70 olarak bulunmuştur. Filmlerin enerji bant aralığı değerleri (E_g) 2.53-2.62 eV bulundu.

Keywords

• Silar metodu,İnce film,Cu2O,Fiziksel özellikler

Physical properties of Cu2O thin films prepared by silar method

Abstract

Polycrystalline Cu₂O thin films were obtained on glass substrates using by silar method at 70 °C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu₂O thin films UV/vis spectrophotometer was used. Optical transmittance (T %) values of the Cu₂O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu₂O of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E_g) of the films were found to be 2.53-2.62 eV.

Keywords

• Silar method,Thin film,Cu2O,Physical properties

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