Sılar metodu ile hazırlanan Cu2O ince filmlerin fiziksel özellikleri

Year 2017, Volume: 23 Issue: 7, 854 - 857, 27.12.2017

Doğan Özaslan Mustafa Güneş Cebrail Gümüş

Abstract

Silar
metodu kullanılarak 70 °C’de cam alttabanlar üzerine polikristal Cu₂O
ince filmleri elde edildi. XRD analizleri filmlerin kübik yapıda olduğunu
gösterdi ve örgü parametreleri hesaplandı. Filmlerin yüzey morfolojisi alan
emisyonlu taramalı elektron mikroskobu (FE-SEM) ile görüntülendi. Filmlerin
optik özelliklerini belirlemek için UV/vis spektrofotometresi kullanılmıştır.
Filmlerin oda sıcaklığındaki optik geçirgenlik (% T) değerleri 300-1100 nm dalga
boyu aralığında belirlenmiştir. Yarıiletken Cu₂O ince filmlerinin
görünür bölgedeki optik geçirgenlik değerleri %50-70 olarak bulunmuştur.
Filmlerin enerji bant aralığı değerleri (E_g) 2.53-2.62 eV bulundu.

Keywords

Silar metodu, İnce film, Cu2O, Fiziksel özellikler

Physical properties of Cu2O thin films prepared by silar method

Abstract

Polycrystalline
Cu₂O thin films were obtained on glass substrates using by silar
method at 70 °C. XRD analysis showed the films are a cubic structure
and lattice parameters were calculated. The surface morphology of the films
were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order
to determine the optical properties of the Cu₂O thin films UV/vis
spectrophotometer was used. Optical transmittance (T %) values of the Cu₂O
films were determined in the wavelength range 300-1100 nm at room temperature.
Semiconductor Cu₂O of the thin films optical transmittance values
were found to be 50-70% in the visible region. Energy band gap values (E_g)
of the films were found to be 2.53-2.62 eV.

Keywords

Silar method, Thin film, Cu2O, Physical properties

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