Elektrokimyasal büyütme tekniğiyle büyütülen geçirgen NiO ince filmlerin hazırlanması ve karakterizasyonu

Year 2018, Volume: 24 Issue: 7, 1315 - 1324, 28.12.2018

Kübra Çınar Demir

Abstract

ITO
altlık üzerine geçirgen NiO (nikel oksit)  ince filmler farklı katodik akımlarda
elektrokimyasal büyütme tekniği ile büyütülmüştür. Büyütme sonrası filmler 350
°C’de hava ortamında 2 sa. tavlanmıştır. X-ışını kırınım (XRD) örnekleri altlık
üzerine büyütülen filmlerin (111), (200) ve (222) yönelimlere sahip tek fazlı
kübik yapılı polikristal olduklarını göstermiştir.  Soğurma ölçümleriyle büyütülen NiO filmlerin
band aralığı 2.85 eV olarak hesaplanmıştır. 310-800 nm aralığında alınan
Fotolüminesans (PL) ölçümlerinden NiO ince filmlerin üç emisyon pikine sahip
olduğu görülmüştür. Taramalı elektron mikroskobu (SEM) ve atomik kuvvet mikroskobu
(AFM) ile büyütülen filmlerin yüzey morfolojisi incelenmiştir. Fourier
Dönüşümlü İnfrared Spektroskopi (FTIR) analizleriyle filmlerin oluşumunda Ni-O
bağların titreşim modlarına sahip olduğu ortaya çıkarılmış ve filmlerin görünür
bölgede %50 ile %80 arasında ortalama bir optik geçirgenliğe sahip olduğu
görülmüştür. XPS ölçümleri Ni/O yönelimi ve farklı büyütme koşullarına bağlı
olarak büyütülen NiO filmlerin kimyasal bağlanma durumları gibi kimyasal
özelliklerini incelemek için gerçekleştirilmiştir. Raman ölçümleri
elektrokimyasal olarak büyütülen NiO filmlerinin stokiyometrik olmadığını
göstermiştir. Görüldüğü gibi, NiO nanoparçacıkların yoğunluğu ve morfolojisinin
optoelektronik aygıtların oluşumunda oldukça önemli olduğu anlaşılmıştır.

Keywords

NiO, XRD, Elektrokimyasal büyütme, SEM

Characterization and preparation of transparent NiO thin films growth by electrochemical deposition technique

Abstract

Transparent
NiO thin films were growth in different cathodic currents by using
electrochemical deposition technique on ITO substrates. After deposition, thin
films were annealed at 350° for 2 hours in air environment. X-ray diffraction
(XRD) patterns indicated that thin films growth on substrates have a
single-phased cubic polycrystalline structure with orientations of (111), (200)
and (222). Band gap of NiO films growth by using absorption measurements were
calculated as 2.85 eV. The data obtained from the measurements of
photoluminescence (PL) carried out between 310-800 nm, indicated that NiO thin
films have three emission peaks. NiO thin films growth were investigated from
the point of surface morphology by scanning electron microscopy (SEM) and
atomic force microscopy (AFM). It has been revealed that there are the
vibrational modes of Ni-O bonds in the formation of the films with Fourier
transform infrared spectroscopy (FTIR) analysis and showed that the films have
an average optical transmittance between 50% and 80% in the visible region. XPS
measurements were studied to examine the chemical features as chemical bonding
states of the NiO films deposited depending on Ni/O orientation and different
conditions. Raman measurements displayed that the growth NiO films have not a
stoichiometric nature. As seen, it has been understood that the density and
morphology of NiO particles are very important in the formation optoelectronic
devices.

Keywords

NiO, XRD, Electrochemical deposition, SEM

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