The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

Year 2018, , 919 - 925, 01.12.2018

Hasan Hüseyin Güllü Dilber Esra Yıldız

https://doi.org/10.2339/politeknik.389625

Abstract

SnTe thin film layer was fabricated
by magnetron sputtering technique on n-Si substrate, and the electrical
properties of the In/SnTe/Si/Ag diode structure was investigated by using
temperature dependent forward bias current-voltage (I-V) measurements. The main
diode parameters were calculated according to the thermionic emission (TE)
model and they were found in an abnormal behavior with change in temperate in
which zero-bias barrier height (



















) increases and ideality factor (

) decreases with increasing
temperature. Therefore, the total current flow though the junction was
expressed by the Gaussian distribution (GD) of barrier height. The plot of

 vs

 showed the existence of inhomogeneous barrier
formation and evidence for the application of Gaussian function to identify the
distribution of low barrier height patches. The mean barrier height was found
as 1.274 with the 0.166 eV standard deviation. From the modified Richardson
plot, Richardson constant was calculated as 119.5A/cm²K²
in very close agreement with the reported values. Additionally, the effects of
the series resistance (

) were analyzed by using Cheung’s
function. Distribution of the interface states (

) were extracted from the I-V
characteristics and found in increasing behavior with decreasing temperature. 

Keywords

Sputtering technique, barrier height, Gaussian distribution, interface states

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