Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

Year 2019, , 63 - 67, 01.03.2019

Hasan Hüseyin Güllü Dilber Esra Yıldız

https://doi.org/10.2339/politeknik.389636

Abstract

The study on electrical and
dielectric properties of the ZnSe/p-Si diode have been investigated using
admittance measurements in the frequency range of 50 kHz - 1 MHz at room
temperature. The experimental values of dielectric constant and dielectric loss
are found in decreasing behavior with increase in frequency due to the
characteristics of the interface capacitance in the diode and so that the
similar behavior was observed in loss tangent. With the contribution of the
series resistance, the results of the electrical conductivity analysis
indicated direct proportionality to the frequency change. Additionally,
electric modulus was discussed to represent the dielectric relaxation process
in the diode structure. 

Keywords

E-beam evaporation, dielectric properties, frequency effect

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