Elektron Demet ile Işınlanmış PTCDA Arayüzey Tabakalı Au/PTCDA/n-Si Diyotların Elektriksel Özellikleri

Year 2019, , 393 - 398, 01.06.2019

Umut Aydemir

https://doi.org/10.2339/politeknik.417761

Abstract

Bu çalışmada, geleneksel Au/n-Si
Schottky Diyotların (SDs) aygıt performansının ışınlanmış PTCDA arayüzey
tabakası kullanılarak yenilikçi bir yaklaşımla iyileştirilmesi amaçlanmıştır.
Bu nedenle ilk olarak PTCDA tozları 30kGy, 60kGy ve 100kGy farklı elektron
demet (E-Demet) dozlarında ışınlanmıştır ve sonuçlar FTIR yöntemi ile analiz
edilmiştir. Işınlanmamış ve ışınlanmış PTCDA tozları n-Si alttaş üzerine
organik buharlaştırma sisteminde kaplanmıştır. Farklı dozlarda E-Demet ile
ışınlanmış ve ışınlanmamış PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD’ların
Akım-Gerilim (I-V) karakteristikleri ±3V arasında oda sıcaklığında
gerçekleştirilmiştir. Aygıtların idealite faktörü(n), Schottky engel yüksekliği
(F_Bo),
doğrultma oranı (DO), seri direnç (R_s) ve Şönt direnci (R_sh)
parametreleri I-V sonuçlarından hesaplanarak elde edilmiştir. 30 kGy ışınlanmış
PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD aygıt performansının ışınlanmamış
PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD’a göre daha iyi olduğu deneysel olarak
gözlenmiştir. Au/PTCDA/n-Si SD’un I-V karakteristiklerinin ışınlama ile oldukça
etkilendiği ve uygun ışınlama dozu ile aygıt performansının artırılabileceği
gözlemlenmiştir.  

Keywords

Au/PTCDA/n-Si, PTCDA arayüzey tabakası, Schottky diyotlar, E-Demet ışınlama

The Electrical Properties of Au/PTCDA/n-Si Diodes with Electron Beam Irradiated PTCDA Interfacial Layer

Abstract

In this work, it
is aimed to improve the device performance of traditional Au / n-Si Schottky
Diodes (SDs) with an innovative approach using the irradiated PTCDA interfacial
layer. For this reason, first PTCDA powders were irradiated with different
electron beam (E-Beam) doses of 30kGy, 60kGy and 100kGy and the results were
analyzed by FTIR method.

Unirradiated and irradiated PTCDA powders with E-Beam were evaporated on n-Si
substrate via organic evaporator. Current-Voltage (I-V) characteristics of
unirradiated and irradiated Au/PTCDA/n-Si SDs with PTCDA interfacial layers
irradiated with different E-Beam doses of 30kGy, 60kGy and 100kGy were carried
out between ±3V at room temperature. The ideality factor (n), Schottky barrier
height (F_Bo),
rectification ratio (DO), series resistance (R_s) and shunt
resistance (R_sh) of devices were calculated from current-voltage
(I-V) results. It is experimentally seen that performance of Au/PTCDA/n-Si SD
irradiated with 30 kGy has better results when we compared unirradiated
Au/PTCDA/n-Si SD. It has been observed that the I-V characteristics of the
Au/PTCDA/n-Si SD are highly influenced by irradiation and the device
performance can be improved with appropriate irradiation dose.

Keywords

Au/PTCDA/n-Si, PTCDA interfacial layer, Schottky diodes, E-Beam irradiation

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