Analyzing The InGaN LED Structures for White LED Applications

Year 2017, Volume: 20 Issue: 3, 531 - 536, 15.09.2017

İlknur Kars Durukan Mustafa Öztürk Süleyman Özçelik Ekmel Özbay

Abstract

In this paper, blue-light InGaN/GaN light-emitting diodes were deposited on
sapphire substrate by the Metal Organic Chemical
Vapor Deposition (MOCVD) to investigate the properties of blue LEDs with
various well thickness having different indium composition. Structural
properties of LEDs was studied by high-resolution X-ray diffraction (HRXRD),
Photoluminescence (PL) and ultraviole (UV). Our aim is to increase the quality of the LED
structure by taking advantage of the mosaic structure calculations.  The use of LED in commercial areas has increased.
But, there are great difficulties in preventing defects. Lateral and vertical
crystal size, dislocations, tilt and twist properties are investigated with
HR-XRD device by Vegard and William hall semi-experimental methods.  While
dislocation value of the first sample is lower than first sample with less
indium content ration, stress value of first sample is higher than second
sample. In addition, The twist angle of first sample is lower. This shows that
while the structure is crystallized, the tension is much greater, which is an
interesting result. This is due to the mismatch when the diode is cooled to
lower temperatures than the growth temperature. 

Keywords

InGaN/GaN, MOCVD, HRXRD, PL, UV

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