TlSe İnce Filminin Dalgalı İletkenliği

Year 2018, Volume: 21 Issue: 3, 753 - 757, 01.09.2018

Kemal Ulutas

https://doi.org/10.2339/politeknik.417769

Abstract

TlSe kristallerinin ısıl buharlaştırılması ile 900 Å kalınlığında hazırlanmış TlSe ince filminin kapasitans (C) ve dielektrik kayıp

faktörü (tan δ) omik özellik gösteren Al elektrotlar kullanılarak ölçülmüştür. Hazırlanan TlSe ince filmlerin dielektrik sabiti ( ε'),

dielektrik modülün gerçek (M') ve sanal kısımları (M'') ile dalgalı iletkenliği (σac) , 100 Hz-106 Hz frekans ve 213-393 K sıcaklık

aralığında hesaplanmıştır. Cole-Cole eşitliği kullanılarak  yapıdaki  rahatlama  zamanları  belirlenmiştir.  TlSe   ince   filmlerinin

dielektrik  parametrelerinin  artan  frekansla  azaldığı  ve  artan  sıcaklıkla  arttığı  bulunmuştur.  Bu davranış yapıda birden fazla

kutuplanma mekanizmasının varlığıyla açıklanabilir. AC iletkenliğin,ωs ilişkisini ( s <1 olmak üzere) sağladığı belirlendi.Yapıda

iki  farklı  iletkenlik  mekanizması  belirlenmiştir.  Bunlar, düşük frekanslarda küçük polaron tünellemesi ve yüksek frekanslarda

klasik hoplama mekanizmalarıdır

Keywords

TlSe, ince film, ac iletkenlik, dielektrik sabiti, dielektrik modül

Alternative Conductivity of TlSe Thin Film

Abstract

Capacitance (C) and dielectric loss factor (tan δ) of TlSe thin
film with thickness of 900 Å, measured via thermal evaporation of
TlSe crystals, have been measured using ohmic Al electrodes.  Dielectric constant (ε'), 
dielectric loss (ε_r'') ,
reel part and imaginary part of 
dielectric modulus and ac conducticity of the TlSe thin films have been calculated  in the frequency range 100 Hz-10⁶
Hz and within the temperature interval 213-393 K. Relaxation times in
structure were derived by using Cole-Cole relation. The dielectric parameters
of TlSe thin film are found to decrease with increasing frequency and
increase with increasing temperature. This behavior can be explained as the
multicomponent polarization
in the structure. The ac conductivity obeys the ω^s law with s (s<1). Two
different conductivity mechanisms were determined in the structure. These are
small polaron tunnels of the mechanism at low frequencies and classic hopping
mechanism at high frequencies.

Keywords

TlSe, thin film, ac conductivity, dielectric constant, dielectric modulus

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