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MOCVD ile büyütülen InGaN/GaN güneş hücresi yapısının a-,c- örgü parametreleri, zorlamagerilme analizi ve termal genleşme katsayısı

Year 2019, Volume: 22 Issue: 1, 33 - 39, 01.03.2019
https://doi.org/10.2339/politeknik.403978

Abstract

Metal organik kimyasal buhar biriktirme (MOCVD) tekniği ile büyütülen InGaN/GaN güneş hücrelerinin (SC) yapısal özellikleri yüksek çözünürlüklü X-ışını kırınımı (HR-XRD) yöntemi ile araştırılmıştır. Yapıların a- ve c- örgü parametrelerinin incelenen (hkl) düzlemlere göre küçük farklılıklar gösterdikleri dikkat çekmektedir. a- ve c- örgü parametrelerinin hata yüzdeleri hesaplandı. Tüm numuneler için hata yüzdesinin %2’den küçük olduğu görülmektedir. Üç farklı numune için araştırmalar yapılmıştır. Her üç numunede de büyüme koşullarından kaynaklanan kristal kalitesinde farklılıklar görülür. Aynı zamanda Kristal boyutu, zorlama ve gerilme gibi özellikleri de belirlendi. Gerilmenin belirlenmesinde elastik sabitler, Young modülü ve Poisson oranı olmak üzere farklı yöntemler kullanıldı. Yöntemlerden elde edilen sonuçlar birbirleriyle karşılaştırılmıştır. InGaN’ın termal genleşme katsayıları 100oC sıcaklık farkı (300-400 oC) için (002), (004), (006) ve (121) düzlemleri için hesaplandı. HR-XRD’den elde edilen pik pozisyonlarının veri tabanlarındaki (database) pik pozisyonlarıyla neredeyse aynı olduğu görülmektedir. Hesaplamalardan elde edilen tüm sonuçlar bu çalışmanın bölümlerinde yer alan tablolarda verilmektedir. Bütün bu sonuçların farklı yazarlar tarafından yapılmış önceki eserlere ve gerçek değerlere uygun olduğu görülmektedir.

References

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  • [12] Moram M. A.; Vickers M. E.,” X-Ray Diffraction of Iii-Nitrides”, Rep Prog Phys, 72, (2009).
  • [13] Kisielowski C., et al., “Strain-Related Phenomena in Gan Thin Films”, Phys Rev B 54: 17745-17753, (1996).
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Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

Year 2019, Volume: 22 Issue: 1, 33 - 39, 01.03.2019
https://doi.org/10.2339/politeknik.403978

Abstract

Structural properties of InGaN/GaN solar cells (SCs)
grown by metal organic chemical vapor deposition (MOCVD) technique are
investigated by high resolution X-ray diffraction (HR-XRD) method. It is
noticed that a- and c- lattice parameters of the structures showed small
differences according to examined (hkl) planes. Fault percentage of the a- and
c- lattice parameters are also calculated. It is seen that fault percentage is
smaller than %2 for all samples. Investigations have been made for three
different samples. Differences in crystal quality caused by growth conditions
are seen in all three samples. At the same time, properties such as crystal
size, strain and stress are determined. During determination of stress, two
different methods including elastic constants, Young module and Poisson ratio
are used. Results gained from these two methods are compared with each
other.  Thermal expansion coefficients of
InGaN are calculated for (002), (004), (006) and (121) planes for 100 oC
temperature difference (300-400 oC). It is seen that peak positions
gained from HR-XRD are nearly the same with the ones in database. All the
results obtained from calculations are given in tables in the following
sections of this article. It can be seen that all these results are in
accordance with previous works done by different authors and with the real
values.
  

References

  • [1] Nakamura S., Pearton S., Fasol G., “The Blue Laser Diode”, (2000).
  • [2] Davydov V.Y.; Klochikhin A.A.; Seisyan R. P.; Emtsev V.V.; Ivanov S.V.; Bechstedt F.; Furthmuller J.; Harima H.; Mudryi A.V.; Aderhold J.; Semchinova O.; Graul J., “Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap”, Physica Status Solidi B-Basic Solid State Physics, , 229 (3): R1-R3, (2002).
  • [3] Matsuoka T.; Okamoto H.; Nakao M.; Harima H.; Kurimoto E., “Optical bandgap energy of wurtzite InN”, Appl Phys Lett, 81 (7): 1246-1248, (2002).
  • [4] Green M. A.,” Recent developments and future prospects for third generation and other advanced cells” Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 1-2: 15-19, (2006).
  • [5] Luque A.; Marti A., “A Metallic Intermediate Band High Efficiency Solar Cell”, Prog Photovoltaics, 9: 73-86, (2001).
  • [6] Fetzer C. M.; King R. R.; Colter P. C.; Edmondson K. M.; Law D. C.; Stavrides A. P.; Yoon H.; Ermer J. H.; Romero M. J.; Karam N. H., “High-Efficiency Metamorphic Gainp/Gainas/Ge Solar Cells Grown by Movpe”, J Cryst Growth, 261: 341-348, (2004) .
  • [7] Law D. C.; Fetzer C. M.; King R. R.; Colter P. C.; Yoon H.; Isshiki T. D.; Edmondson K. M.; Haddad M.; Karam N. H., “Multijunction Solar Cells with Subcell Materials Highly Lattice-Mismatched to Germanium”, Ieee Phot Spec Conf, 575-578, (2005). [8] Dridi Z.; Bouhafs B.; Ruterana P., “First-Principles Investigation of Lattice Constants and Bowing Parameters in Wurtzite Alxga1-Xn, Inxga1-Xn and Inxal1-Xn Alloys”, Semicond Sci Tech, 18: 850-856, (2003).
  • [9] Birks L. S. a. F., H.,” Particle Size Determination from X-Ray Line Broadening”, J Appl Phys, 17: (1946).
  • [10] Delhez R.; Dekeijser T. H.; Mittemeijer E. J., “Determination of Crystallite Size and Lattice-Distortions through X-Ray-Diffraction Line-Profile Analysis - Recipes, Methods and Comments”, Fresen Z Anal Chem, 312: 1-16, (1982).
  • [11] Wassermann G. and G., J., “Texturen Metallischer Werkstoffe”, (1962).
  • [12] Moram M. A.; Vickers M. E.,” X-Ray Diffraction of Iii-Nitrides”, Rep Prog Phys, 72, (2009).
  • [13] Kisielowski C., et al., “Strain-Related Phenomena in Gan Thin Films”, Phys Rev B 54: 17745-17753, (1996).
  • [14] Suryanarayana C. a. N., M. G., “X-Ray Diffraction”, (1996).
  • [15] Serway R. A. a. B., R. J. ,” Physics for Scientists and Engineers”, (2000).
There are 14 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Article
Authors

A. Kürşat Bilgili This is me

Ömer Akpınar This is me

Gürkan Kurtuluş This is me

M. Kemal Öztürk This is me

Süleyman Özçelik This is me

Ekmel Özbay This is me

Publication Date March 1, 2019
Submission Date October 20, 2017
Published in Issue Year 2019 Volume: 22 Issue: 1

Cite

APA Bilgili, A. K., Akpınar, Ö., Kurtuluş, G., Öztürk, M. K., et al. (2019). Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi, 22(1), 33-39. https://doi.org/10.2339/politeknik.403978
AMA Bilgili AK, Akpınar Ö, Kurtuluş G, Öztürk MK, Özçelik S, Özbay E. Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi. March 2019;22(1):33-39. doi:10.2339/politeknik.403978
Chicago Bilgili, A. Kürşat, Ömer Akpınar, Gürkan Kurtuluş, M. Kemal Öztürk, Süleyman Özçelik, and Ekmel Özbay. “Lattice Parameters a-, C-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD”. Politeknik Dergisi 22, no. 1 (March 2019): 33-39. https://doi.org/10.2339/politeknik.403978.
EndNote Bilgili AK, Akpınar Ö, Kurtuluş G, Öztürk MK, Özçelik S, Özbay E (March 1, 2019) Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi 22 1 33–39.
IEEE A. K. Bilgili, Ö. Akpınar, G. Kurtuluş, M. K. Öztürk, S. Özçelik, and E. Özbay, “Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD”, Politeknik Dergisi, vol. 22, no. 1, pp. 33–39, 2019, doi: 10.2339/politeknik.403978.
ISNAD Bilgili, A. Kürşat et al. “Lattice Parameters a-, C-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD”. Politeknik Dergisi 22/1 (March 2019), 33-39. https://doi.org/10.2339/politeknik.403978.
JAMA Bilgili AK, Akpınar Ö, Kurtuluş G, Öztürk MK, Özçelik S, Özbay E. Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi. 2019;22:33–39.
MLA Bilgili, A. Kürşat et al. “Lattice Parameters a-, C-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD”. Politeknik Dergisi, vol. 22, no. 1, 2019, pp. 33-39, doi:10.2339/politeknik.403978.
Vancouver Bilgili AK, Akpınar Ö, Kurtuluş G, Öztürk MK, Özçelik S, Özbay E. Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi. 2019;22(1):33-9.