XRD vs Raman for InGaN/GaN Structures

Year 2020, Volume: 23 Issue: 2, 291 - 296, 01.06.2020

Ahmet Kürşat Bilgili Ömer Akpınar Mustafa Kemal Öztürk Süleyman Özçelik Ekmel Özbay

https://doi.org/10.2339/politeknik.537733

Cited By: 3

Abstract

In this study, InGaN/GaN structures are grown by using Metal Organic
Chemical Vapor Deposition (MOCVD) technique. Some structural, optical and morphological
properties of InGaN/GaN structures are investigated in detail. For structural
analysis, X-ray diffraction (XRD), for optical, Raman and morphological, Atomic
Force Microscopy (AFM) measurement techniques are used. In XRD analysis both
samples presented hexagonal crystal structure. XRD peaks for these two samples
showed small differences dependent on growth conditions. Strain and stress
values are determined from XRD and they are compared with Raman results. In
Raman analysis, five different chemicals are determined in both samples. Raman
analysis results are in good accordance with XRD, growth conditions and AFM
images. In AFM images, there can be seen hills and holes and they are partly
homogeneous. There are also some white regions in AFM images. According to
Raman peak center data, these white regions are detected as white rust.

Keywords

XRD, InGaN, GaN, MOCVD, AFM, raman

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