Year 2021, Volume 24 , Issue 2, Pages 511 - 516 2021-06-01

Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure
Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure

Tuğçe ATAŞER [1] , Durmuş DEMİR [2] , Ahmet Kursat BILGILI [3] , Mustafa ÖZTÜRK [4] , Süleyman ÖZÇELİK [5]


Structural properties of AlN buffer layers, grown by Metal Organic Chemical Vapor Deposition (MOCVD) on 4H-SiC substrate with thicknesses of 61.34, 116.88, 129.46 and 131.50 nm, are investigated by High Resolution X-Ray Diffraction (HR-XRD) technique. Interfacial roughness of AlN buffer layer was determined by XRR technique. The interface roughness value of 131.50 nm thick sample is determined as 0.50 nm. Mosaic defects, tilt angle, vertical and lateral coherence lengths are characterized by HR-XRD technique. The edge and screw dislocations of the 131.50 nm thick sample are found as 2.98x1010 and 8.86x108 cm-2 respectively. The results indicate that 131.50 nm thick AlN buffer layer should be used in order to gain high performance in optoelectronic terms in this study. Thus, optimization of AlN buffer layer thickness is extremely important in device performance.

Structural properties of AlN buffer layers, grown by Metal Organic Chemical Vapor Deposition (MOCVD) on 4H-SiC substrate with thicknesses of 61.34, 116.88, 129.46 and 131.50 nm, are investigated by High Resolution X-Ray Diffraction (HR-XRD) technique. Interfacial roughness of AlN buffer layer was determined by XRR technique. The interface roughness value of 131.50 nm thick sample is determined as 0.50 nm. Mosaic defects, tilt angle, vertical and lateral coherence lengths are characterized by HR-XRD technique. The edge and screw dislocations of the 131.50 nm thick sample are found as 2.98x1010 and 8.86x108 cm-2 respectively. The results indicate that 131.50 nm thick AlN buffer layer should be used in order to gain high performance in optoelectronic terms in this study. Thus, optimization of AlN buffer layer thickness is extremely important in device performance.

  • [1] Morkoç H., Cingolania R., Gil B., “Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors”, Solid-State Electronics, 43: 1753-1771, (1999).
  • [2] Prazmowska J., Korbutowicz R., Wosko M., Paszkiewicz R., Kovac J., Srnanek R., Tłaczała M., “Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers”, Acta Physica Polonica A, 116: 123-125, (2009).
  • [3] Lan Y., Chen L., Cao G., Xu L., Xun D., Xu T., Liang J., “Low-temperature synthesis and photoluminescence of AlN”, Journal of Crystal Growth, 207: 247-250, (1999).
  • [4] Cao G., Chen L., Lan Y., Li J., Xu Y., Xu T., Liu Q., Liang J., “Blue emission and Raman scattering spectrum from AlN nanocrystalline powders”, Journal of Crystal Growth, 213: 198-202, (2000).
  • [5] Ponce F., Van de Walle C., Northrup J., “Atomic arrangement at the AlN/SiC interface”, Physical Review B, 53: 7473-7478, (1996).
  • [6] Ponce F., Krusor B., Major S., Plano W., Welch D., “Microstructure of GaN epitaxy on SiC using AlN buffer layers”, Applied Physics Letters, 67: 410-412, (1995).
  • [7] Huang W., Chu C., Wong Y., Chen W., Lin K., Wu H., Lee W., Chang E., “Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures”, Materials Science in Semiconductor Processing, 45: 1-8, (2016).
  • [8] Brubaker M., Levin I., Davydov V., Rourke D., Sanford N., Bright V., Bertness K., “Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy”, Journal of Applied Physics, 110: 053506-1-7, (2011).
  • [9] Singh N., Berghmans A., Zhang H., Wait T., Clarke R., Zingaro J., Golombeck J., “Physical vapor transport growth of large AlN crystals”, Journal of Crystal Growth, 250: 107–112, (2003).
  • [10] Stockmeier M., Müller R., Sakwe S., Wellmann P., Mager A., “On the lattice parameters of silicon carbide”, Journal of Applied Physics, 105: 033511-4, (2009).
  • [11] Kiyu D., “Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)”, Solid State Electronics, 51: 7, (2007).
  • [12] Marchand H., Zhang N., Zhao L., Golan Y., Rosner S., Girolami G., Paul T., Ibbetson J., Keller S., Den Baars S., Speck J., Mishra U., “Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer”, MRS Internet journal of nitride semiconductor research, (2014).
  • [13] Çörekçi S., Öztürk M., Akaoğlu B., Çakmak M., Özçelik S., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, Journal of Applied Physics, 101: 123502-1-4, (2007).
  • [14] Cörekçi S., Dugan S., Ozturk M., Cetin S., Cakmak M., Ozcelik S., Ozbay E., “Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness”, Journal of Electronic Materials, 45: 3278-3284, (2016).
  • [15] Moram M., Vickers E., “X-ray diffraction of III-nitrides”, Rep Prog Physics, 72: 1-40, (2009).
  • [16] Chierchia R., Wttcher T., Heinke H., Einfeldt S., Figge S., Hommel D., “Microstructure of heteroepitaxial GaN revealed by x-ray diffraction”, Journal of Applied Physics, 93: 8918-8925, (2003).
  • [17] Arslan E., Demirel P., Çakmak H., Öztürk M., Ozbay E., “Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate”, Advances in Materials Science and Engineering, 1-11, (2014).
  • [18] Bas Y.¸ Demirel., Akın N., Baskose C., Ozen Y., Kınacı B., Ozturk M., Ozcelik S., Ozbay E., “Microstructural defect properties of InGaN/GaN blue light emitting diode structures”, Journal of Materials Science: Mater Electron, 25: 3924–3932, (2014).
  • [19] Corekci S., Ozturk M., Cakmak M., Ozcelik S., Ozbay E., “The influence of thickness and ammonia flow rate on the properties of AlN layers”, Materials Science in Semiconductor Processing, 15: 32-36, (2012).
  • [20] Tamer M., Ozturk M., Corekci S., Bas Y., Gultekin A., Kurtulus G., Ozcelik S., Ozbay E., “Structural investigation of AlInN/AlN/GaN heterostructures”, Journal of Materials Science: Mater Electron, 27: 2852-2859, (2016).
  • [21] Liu B., Zhang R., Xie Z., Lu H., Liu Q., “Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction”, Journal of Applied Physics, 103: 023504-1-4, (2008).
  • [22] Morse M., Wu P., Choi S., Kim T., Browm A., Losurdo M., Bruno G., “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates”, Applied Surface Science, 253: 232–235, (2006).
Primary Language en
Subjects Engineering
Journal Section Research Article
Authors

Orcid: 0000-0002-8146-7707
Author: Tuğçe ATAŞER
Institution: GAZİ ÜNİVERSİTESİ
Country: Turkey


Orcid: 0000-0003-2446-9279
Author: Durmuş DEMİR
Institution: GAZİ ÜNİVERSİTESİ
Country: Turkey


Orcid: 0000-0003-3420-4936
Author: Ahmet Kursat BILGILI (Primary Author)
Institution: GAZİ ÜNİVERSİTESİ
Country: Turkey


Orcid: 0000-0002-8508-5714
Author: Mustafa ÖZTÜRK
Institution: GAZİ ÜNİVERSİTESİ
Country: Turkey


Orcid: 0000-0002-3761-3711
Author: Süleyman ÖZÇELİK
Institution: GAZİ ÜNİVERSİTESİ
Country: Turkey


Supporting Institution CSBB
Project Number 2016K121220
Dates

Application Date : January 31, 2020
Publication Date : June 1, 2021

Bibtex @research article { politeknik682649, journal = {Politeknik Dergisi}, issn = {}, eissn = {2147-9429}, address = {Gazi Üniversitesi Teknoloji Fakültesi 06500 Teknikokullar - ANKARA}, publisher = {Gazi University}, year = {2021}, volume = {24}, pages = {511 - 516}, doi = {10.2339/politeknik.682649}, title = {Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure}, key = {cite}, author = {Ataşer, Tuğçe and Demir, Durmuş and Bılgılı, Ahmet Kursat and Öztürk, Mustafa and Özçelik, Süleyman} }
APA Ataşer, T , Demir, D , Bılgılı, A , Öztürk, M , Özçelik, S . (2021). Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure . Politeknik Dergisi , 24 (2) , 511-516 . DOI: 10.2339/politeknik.682649
MLA Ataşer, T , Demir, D , Bılgılı, A , Öztürk, M , Özçelik, S . "Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure" . Politeknik Dergisi 24 (2021 ): 511-516 <https://dergipark.org.tr/en/pub/politeknik/issue/61515/682649>
Chicago Ataşer, T , Demir, D , Bılgılı, A , Öztürk, M , Özçelik, S . "Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure". Politeknik Dergisi 24 (2021 ): 511-516
RIS TY - JOUR T1 - Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure AU - Tuğçe Ataşer , Durmuş Demir , Ahmet Kursat Bılgılı , Mustafa Öztürk , Süleyman Özçelik Y1 - 2021 PY - 2021 N1 - doi: 10.2339/politeknik.682649 DO - 10.2339/politeknik.682649 T2 - Politeknik Dergisi JF - Journal JO - JOR SP - 511 EP - 516 VL - 24 IS - 2 SN - -2147-9429 M3 - doi: 10.2339/politeknik.682649 UR - https://doi.org/10.2339/politeknik.682649 Y2 - 2020 ER -
EndNote %0 Politeknik Dergisi Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure %A Tuğçe Ataşer , Durmuş Demir , Ahmet Kursat Bılgılı , Mustafa Öztürk , Süleyman Özçelik %T Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure %D 2021 %J Politeknik Dergisi %P -2147-9429 %V 24 %N 2 %R doi: 10.2339/politeknik.682649 %U 10.2339/politeknik.682649
ISNAD Ataşer, Tuğçe , Demir, Durmuş , Bılgılı, Ahmet Kursat , Öztürk, Mustafa , Özçelik, Süleyman . "Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure". Politeknik Dergisi 24 / 2 (June 2021): 511-516 . https://doi.org/10.2339/politeknik.682649
AMA Ataşer T , Demir D , Bılgılı A , Öztürk M , Özçelik S . Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure. Politeknik Dergisi. 2021; 24(2): 511-516.
Vancouver Ataşer T , Demir D , Bılgılı A , Öztürk M , Özçelik S . Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure. Politeknik Dergisi. 2021; 24(2): 511-516.
IEEE T. Ataşer , D. Demir , A. Bılgılı , M. Öztürk and S. Özçelik , "Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure", Politeknik Dergisi, vol. 24, no. 2, pp. 511-516, Jun. 2021, doi:10.2339/politeknik.682649