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Effects of Boron Doping into GaSe Semiconductor Crystals on Optical Limiting and Two Photon Absorption Properties

Year 2023, Volume: 26 Issue: 1, 161 - 168, 27.03.2023
https://doi.org/10.2339/politeknik.933320

Abstract

Pure GaSe and 0.1%, 0.5% and 1% boron doped GaSe crystals were grown using vertical Bridgman-Stockbarger method. Two photon absorption and optical limiting properties of semiconductor crystals were investigated using open aperture Z-scan experimental setup. It has been observed that GaSe semiconductor crystals grown at different boron doping ratios exhibit two photon absorption and optical limiting behaviors at 1064 nm wavelength and 4 nanosecond pulse duration. It is concluded that the two photon absorption properties of semiconductor crystals increase with the percentage of boron doping. Among the studied semiconductor crystals, it was observed that 1% boron doped GaSe crystal demonstrated the best optical limiting behavior at low input flux value. According to the open aperture Z-scan experimental results, it was concluded that the two photon absorption and optical limiting properties of semiconductor crystals can be controlled by the doping ratio of boron atoms into the crystal.

References

  • [1] Molloy J.F., Naftaly M., Andreev Y., Kokh K., Lanskii G., Svetlichnyi V., "Absorption anisotropy in sulfur doped gallium selenide crystals studied by THz-TDS", Opt Mat Express, 4(11): 2451-2459, (2014).
  • [2] Guo J., Xie J.J., Li D.A.J., Yang G.L., Chen F., Wang C.R., Zhang L.M., Andreev Y.M., Kokh K.A., Lanskii G.V. and Svetlichnyi V.A., "Doped GaSe crystals for laser frequency conversion", Light-Sci Appl, 4: 1-12, (2015).
  • [3] Chen C.W., Tang T.T., Lin S.H., Huang J.Y., Chang C.S., Chung P.K., Yen S.T. and Pan C.L., "Optical properties and potential applications of epsilon-GaSe at terahertz frequencies", J Opt Soc Am B, 26: 58-65, (2009).
  • [4] Guo J., Li D.J., Xie J.J., Zhang L.M., Feng Z.S., Andreev Y.M., Kokh K.A., Lanskii G.V., Potekaev A. I., Shaiduko A.V. and Svetlichnyi V.A., "Limiting pump intensity for sulfur-doped gallium selenide crystals", Laser Phys Lett, 11:1-6, (2014).
  • [5] Vodopyanov K. L., Mirov S. B., Voevoolin V. G. And Schunemann P. G., "Two-photon absorption in GaSe and CdGeAs2", Opt Commun, 155: 47-50, (1998).
  • [6] Dmitriev V.G., Gurzadyan G.G. and Nikogosyan D.N., "Handbook for Nonlinear Optical Crystals", Volume 64, Siegman A.E., Springer, Third edition, Berlin, (1999).
  • [7] Naftaly M., Molloy J.F., Andreev Y.M., Kokh K.A., Lanskii G.V., Svetlichnyi V.A., "Dispersion properties of sulfur doped gallium selenide crystals studied by THz TDS", Opt. Express, 23: 32820–32834, (2015).
  • [8] Fernelius N.C., "Properties of gallium selenide single crystal", Prog Cryst Growth Charact Mater, 28: 275–353, (1994).
  • [9] Karabulut O., Parlak M., Turan R., Serincan U., Akınoğlu B.G., "Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals", Cryst Res Technol, 41(3): 243–249, (2006).
  • [10] Gouskov A., Camassel J., Gouskov L., "Growth and characterization of III-VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe", Prog Cryst Growth Charact,5: 323–413, (1982).
  • [11] Shigetomi S., Ikari T., Nakashima H., "Electrical properties of p- and n-GaSe doped with As and Ge", Jpn J Appl Phys, 39: 5083–5084, (2000).
  • [12] Capozzi V., "Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectra", Phys Rev B, 28: 4620–4627, (1982).
  • [13] Micocci G., Serra A., Tepore A., "Impurity levels in Sn doped GaSe semiconductor", Phys Status Solidi (A), 162: 649–659, (1997).
  • [14] Augelli V., Manfredotti C., Murri R., Vasanelli L., "Hall-mobility anisotropy in GaSe", Phys Rev B, 17 (8): 3221–3226, (1978).
  • [15] Kim C., Jang K., Lee Y., "Optical properties of Tm-doped GaSe single crystals", Solid State Commun, 130: 701–704, (2004).
  • [16] Allakhverdiev K.R., Yetis M.O., Ozbek S., Baykara T. K. and Salaev E.Y., "Effective nonlinear GaSe crystal. Optical properties and applications", Laser Phys, 19: 1092-1104, (2009).
  • [17] Segura A., Bouvier J., Andres M.V., Manjon F.J., Munoz V., "Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses", Phys Rev B, 56: 4075-4084, (1997).
  • [18] Shigetomi S., Ikari T., "Transport and optical properties of the layer semiconductor p-type GaSe doped with Li", Philos Mag Lett, 79: 575– 579 (1999).
  • [19] Micocci G., Serra A., Tepore A., "Electrical properties of n-GaSe single crystals doped with chlorine", J Appl Phys, 82: 2365–2369, (1997).
  • [20] Shigetomi S., Ikari T., Nakashima H., "Electrical and optical characteristics of the layer semiconductor p-GaSe doped with Ag", Phys Status Solidi (A), 160: 159–164, (1997).
  • [21] Karaağaç H., Parlak M., Karabulut O., Serincan U., Turan R., Akınoğlu B.G., "Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique", Cryst Res Technol, 41: 1159–1166, (2006).
  • [22] Shigetomi S., Ikari T., Nishimura H., "Optical and electrical properties of p-GaSe doped with Sb", Jpn J Appl Phys, 32: 2731–2734, (1993).
  • [23] Suhre D.R., Singh N.B., Balakrishna V., Fernelius N.C., Hopkins F.K., "Improved crystal quality and harmonic generation in GaSe doped with indium", Opt Lett , 22: 775-777, (1997).
  • [24] Huang C., Wang Z., Ni Y., Wu H., Chen S., "Experimental and theoretical investigations on the defect and optical properties of S and Al doped GaSe crystals", RSC Adv, 7: 23486–23493, (2017).
  • [25] Kang Z.H., Guo J., Feng Z.S., Gao J.Y., Xie J.J., Zhang L.M., Atuchin V., Andreev Y., Lanskii G., Shaiduko A., "Tellurium and sulfur doped GaSe for mid-IR applications", Appl Phys B, 108: 545–552, (2012).
  • [26] Karatay A., "Influence of Doping Atoms on Nonlinear Absorption, Ultrafast Dynamics and SHG behaviors in GaSe Crystals", Politeknik Dergisi, 23 (3) : 841-848, (2020).
  • [27] Ertap H., Yuksek M., Karatay A., Elmali A., Karabulut M., "Linear and nonlinear absorption, SHG and photobleaching behaviors of Dy doped GaSe single crystal", Chinese Journal of Physics, 59: 465–472, (2019).
  • [28] Ertap H., "Nonlinear absorption, SHG behavior and carrier dynamics of Nd and Pr doped GaSe single crystals", Opt Mater, 83: 99-103, (2018).
  • [29] Adduci F., Catalano I.M., Cingolani A., Minafra A., "Direct and indirect two-photon processes in layered semiconductors", Phys Rev B, 15: 926-931, (1977).
  • [30] Karatay A., Yuksek M., Ertap H., Mak A.K., Karabulut M., Elmali A., "Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals", Opt Mater, 64: 74–80, (2016).
  • [31] Karatay A., "Controlling of two photon absorption properties by altering composition ratio of GaSxSe1−x crystals", Opt Las Tec, 111: 6–10, (2019).
  • [32] Allakhverdiev K.R. , Baykara T., Joosten S., Gunay E., Kaya A.A. , Kulibekov (Gulubayov) A., Seilmeier A., Salaev E.Yu., "Anisotropy of two-photon absorption in gallium selenide at 1064 nm" Opt Comm,261(1): 60-64, (2006).
  • [33] Yuksek M, Elmali A., Karabulut M., Mamedov G. M., "Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals", Appl Phys B 98: 77–81, (2010).
  • [34] Qu S., Zhao C., Jiang X., Fang G., Gao Y., Zeng H., Song, Y., Qiu, J., Zhu C., Hirao K., "Optical nonlinearities of space selectively precipitated Au nanoparticles inside glasses", Chem Phys Lett, 368: 352-358, (2003).
  • [35] Bacioglu A., Ertap H., Karabulut M. and Mamedov G.M., "Sub-bandgap analysis of boron doped In Se single crystals by constant photocurrent method", Opt Mater, 37: 70-73, (2014).
  • [36] Pankove J.I., Kiewit D. A., " Optical Processes in Semiconductors", J Electrochem Soc, 119 (5): 156, (1972).
  • [37] Sheikbahae M., Said A.A., Wei T.H., Hagan D.J., Vanstryland E.W., "Sensitive measurement of optical nonlinearities using a single beam", IEEE J Quantum Elect 26: 760-769, (1990).
  • [38] Kulibekov A.M., Allakhverdiev K., Guseinova D.A., Salaev E.Y. and Baran O., "Optical absorption in GaSe under high-density ultrashort laser pulses", Opt Commun, 239: 193-198, (2004).
  • [39] Allakhverdiev K.R., "Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals", Solid State Commun, 111: 253-257, (1999).
  • [40] Yuksek M., Elmali A., Karabulut M. and Mamedov G.M., "Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals", Appl Phys B Lasers, 98: 77-81, (2010).
  • [41] Yuksek M., Elmali A., Karabulut M. and Mamedov G.M., "Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal", Opt Mater, 31: 1663-1666, (2009).
  • [42] Dabbicco M. and Brambilla M., "Dispersion of the twophoton absorption coefficient in ZnSe", Solid State Commun, 114: 515-519, (2000).
  • [43] Imangholi B., Hasselbeck M.P. and Sheik-Bahae M., "Absorption spectra of wide-gap semiconductors in their transparency region", Opt Commun, 227: 337-341, (2003).
  • [44] Fox, E. C, van Driel H. M., H.M., "Femtosecond Probing of Photoinduced Refractive Index Changes in Semiconductors", Ultrashort Processes in Condensed Matter, Plenum Press, New York, 1993. [45] Vanstryland E.W., Sheikbahae M., Said A.A., Hagan D.J., Soileau M.J., "Laser Induced Damage" Opt Mater, 1993 (2114): 444-468, (1994).
  • [46] Tao X., Mafi E., Gu Y., Ultrafast carrier dynamics in single-crystal In2Se3 thin layers", Appl Phys Lett, 103(19): 193115, (2013).
  • [47] Pepe Y., Tutel Y., Yildiz E. A., Karatay A., Unalan H. E., Elmali A., "Thermally Induced Phase Transition and Defect-Assisted Nonlinear Absorption and Optical Limiting in Nanorod Morphology V2O5 Thin Films", Adv. Eng. Mater, 2100468, (2021).
  • [48] Pepe Y., Karatay A., Donar Y. O., Yildiz E. A., Sinağ A., Unver H., Elmali A., “Enhanced nonlinear absorption coefficient and low optical limiting threshold of NiO nanocomposite films”, Optik, 227, 165975, (2021).

GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri

Year 2023, Volume: 26 Issue: 1, 161 - 168, 27.03.2023
https://doi.org/10.2339/politeknik.933320

Abstract

Saf GaSe ve %0,1, %0,5 ve %1 oranlarında bor katkılı GaSe kristalleri dikey Bridgman-Stockbarger yöntemi kullanılarak büyütülmüştür. Yarıiletken kristallerin iki foton soğurma ve optik sınırlama özellikleri açık yarık Z tarama deney düzeneği kullanılarak incelenmiştir. Farklı bor katkılama oranlarında büyütülen GaSe yarıiletken kristaller 1064 nm dalga boyunda ve 4 nanosaniye atma süresinde iki foton soğurma ve optik sınırlama davranışları sergilediği gözlenmiştir. Yarıiletken kristallerin iki foton soğurma özelliklerinin bor katkılama yüzdesiyle arttığı sonucuna ulaşılmıştır. Çalışılan yarıiletken kristallerden %1 bor katkılı GaSe kristalinin, düşük giriş akısı değerinde en iyi optik sınırlama davranışı sergilediği görülmüştür. Yapılan açık yarık Z-tarama deney sonuçlarına göre, yarıiletken kristallerin iki foton soğurma ve optik sınırlama özellikleri kristal içerisine yapılan bor atomlarının katkılama yüzdesi ile kontrol edilebilmektedir.

References

  • [1] Molloy J.F., Naftaly M., Andreev Y., Kokh K., Lanskii G., Svetlichnyi V., "Absorption anisotropy in sulfur doped gallium selenide crystals studied by THz-TDS", Opt Mat Express, 4(11): 2451-2459, (2014).
  • [2] Guo J., Xie J.J., Li D.A.J., Yang G.L., Chen F., Wang C.R., Zhang L.M., Andreev Y.M., Kokh K.A., Lanskii G.V. and Svetlichnyi V.A., "Doped GaSe crystals for laser frequency conversion", Light-Sci Appl, 4: 1-12, (2015).
  • [3] Chen C.W., Tang T.T., Lin S.H., Huang J.Y., Chang C.S., Chung P.K., Yen S.T. and Pan C.L., "Optical properties and potential applications of epsilon-GaSe at terahertz frequencies", J Opt Soc Am B, 26: 58-65, (2009).
  • [4] Guo J., Li D.J., Xie J.J., Zhang L.M., Feng Z.S., Andreev Y.M., Kokh K.A., Lanskii G.V., Potekaev A. I., Shaiduko A.V. and Svetlichnyi V.A., "Limiting pump intensity for sulfur-doped gallium selenide crystals", Laser Phys Lett, 11:1-6, (2014).
  • [5] Vodopyanov K. L., Mirov S. B., Voevoolin V. G. And Schunemann P. G., "Two-photon absorption in GaSe and CdGeAs2", Opt Commun, 155: 47-50, (1998).
  • [6] Dmitriev V.G., Gurzadyan G.G. and Nikogosyan D.N., "Handbook for Nonlinear Optical Crystals", Volume 64, Siegman A.E., Springer, Third edition, Berlin, (1999).
  • [7] Naftaly M., Molloy J.F., Andreev Y.M., Kokh K.A., Lanskii G.V., Svetlichnyi V.A., "Dispersion properties of sulfur doped gallium selenide crystals studied by THz TDS", Opt. Express, 23: 32820–32834, (2015).
  • [8] Fernelius N.C., "Properties of gallium selenide single crystal", Prog Cryst Growth Charact Mater, 28: 275–353, (1994).
  • [9] Karabulut O., Parlak M., Turan R., Serincan U., Akınoğlu B.G., "Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals", Cryst Res Technol, 41(3): 243–249, (2006).
  • [10] Gouskov A., Camassel J., Gouskov L., "Growth and characterization of III-VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe", Prog Cryst Growth Charact,5: 323–413, (1982).
  • [11] Shigetomi S., Ikari T., Nakashima H., "Electrical properties of p- and n-GaSe doped with As and Ge", Jpn J Appl Phys, 39: 5083–5084, (2000).
  • [12] Capozzi V., "Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectra", Phys Rev B, 28: 4620–4627, (1982).
  • [13] Micocci G., Serra A., Tepore A., "Impurity levels in Sn doped GaSe semiconductor", Phys Status Solidi (A), 162: 649–659, (1997).
  • [14] Augelli V., Manfredotti C., Murri R., Vasanelli L., "Hall-mobility anisotropy in GaSe", Phys Rev B, 17 (8): 3221–3226, (1978).
  • [15] Kim C., Jang K., Lee Y., "Optical properties of Tm-doped GaSe single crystals", Solid State Commun, 130: 701–704, (2004).
  • [16] Allakhverdiev K.R., Yetis M.O., Ozbek S., Baykara T. K. and Salaev E.Y., "Effective nonlinear GaSe crystal. Optical properties and applications", Laser Phys, 19: 1092-1104, (2009).
  • [17] Segura A., Bouvier J., Andres M.V., Manjon F.J., Munoz V., "Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses", Phys Rev B, 56: 4075-4084, (1997).
  • [18] Shigetomi S., Ikari T., "Transport and optical properties of the layer semiconductor p-type GaSe doped with Li", Philos Mag Lett, 79: 575– 579 (1999).
  • [19] Micocci G., Serra A., Tepore A., "Electrical properties of n-GaSe single crystals doped with chlorine", J Appl Phys, 82: 2365–2369, (1997).
  • [20] Shigetomi S., Ikari T., Nakashima H., "Electrical and optical characteristics of the layer semiconductor p-GaSe doped with Ag", Phys Status Solidi (A), 160: 159–164, (1997).
  • [21] Karaağaç H., Parlak M., Karabulut O., Serincan U., Turan R., Akınoğlu B.G., "Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique", Cryst Res Technol, 41: 1159–1166, (2006).
  • [22] Shigetomi S., Ikari T., Nishimura H., "Optical and electrical properties of p-GaSe doped with Sb", Jpn J Appl Phys, 32: 2731–2734, (1993).
  • [23] Suhre D.R., Singh N.B., Balakrishna V., Fernelius N.C., Hopkins F.K., "Improved crystal quality and harmonic generation in GaSe doped with indium", Opt Lett , 22: 775-777, (1997).
  • [24] Huang C., Wang Z., Ni Y., Wu H., Chen S., "Experimental and theoretical investigations on the defect and optical properties of S and Al doped GaSe crystals", RSC Adv, 7: 23486–23493, (2017).
  • [25] Kang Z.H., Guo J., Feng Z.S., Gao J.Y., Xie J.J., Zhang L.M., Atuchin V., Andreev Y., Lanskii G., Shaiduko A., "Tellurium and sulfur doped GaSe for mid-IR applications", Appl Phys B, 108: 545–552, (2012).
  • [26] Karatay A., "Influence of Doping Atoms on Nonlinear Absorption, Ultrafast Dynamics and SHG behaviors in GaSe Crystals", Politeknik Dergisi, 23 (3) : 841-848, (2020).
  • [27] Ertap H., Yuksek M., Karatay A., Elmali A., Karabulut M., "Linear and nonlinear absorption, SHG and photobleaching behaviors of Dy doped GaSe single crystal", Chinese Journal of Physics, 59: 465–472, (2019).
  • [28] Ertap H., "Nonlinear absorption, SHG behavior and carrier dynamics of Nd and Pr doped GaSe single crystals", Opt Mater, 83: 99-103, (2018).
  • [29] Adduci F., Catalano I.M., Cingolani A., Minafra A., "Direct and indirect two-photon processes in layered semiconductors", Phys Rev B, 15: 926-931, (1977).
  • [30] Karatay A., Yuksek M., Ertap H., Mak A.K., Karabulut M., Elmali A., "Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals", Opt Mater, 64: 74–80, (2016).
  • [31] Karatay A., "Controlling of two photon absorption properties by altering composition ratio of GaSxSe1−x crystals", Opt Las Tec, 111: 6–10, (2019).
  • [32] Allakhverdiev K.R. , Baykara T., Joosten S., Gunay E., Kaya A.A. , Kulibekov (Gulubayov) A., Seilmeier A., Salaev E.Yu., "Anisotropy of two-photon absorption in gallium selenide at 1064 nm" Opt Comm,261(1): 60-64, (2006).
  • [33] Yuksek M, Elmali A., Karabulut M., Mamedov G. M., "Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals", Appl Phys B 98: 77–81, (2010).
  • [34] Qu S., Zhao C., Jiang X., Fang G., Gao Y., Zeng H., Song, Y., Qiu, J., Zhu C., Hirao K., "Optical nonlinearities of space selectively precipitated Au nanoparticles inside glasses", Chem Phys Lett, 368: 352-358, (2003).
  • [35] Bacioglu A., Ertap H., Karabulut M. and Mamedov G.M., "Sub-bandgap analysis of boron doped In Se single crystals by constant photocurrent method", Opt Mater, 37: 70-73, (2014).
  • [36] Pankove J.I., Kiewit D. A., " Optical Processes in Semiconductors", J Electrochem Soc, 119 (5): 156, (1972).
  • [37] Sheikbahae M., Said A.A., Wei T.H., Hagan D.J., Vanstryland E.W., "Sensitive measurement of optical nonlinearities using a single beam", IEEE J Quantum Elect 26: 760-769, (1990).
  • [38] Kulibekov A.M., Allakhverdiev K., Guseinova D.A., Salaev E.Y. and Baran O., "Optical absorption in GaSe under high-density ultrashort laser pulses", Opt Commun, 239: 193-198, (2004).
  • [39] Allakhverdiev K.R., "Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals", Solid State Commun, 111: 253-257, (1999).
  • [40] Yuksek M., Elmali A., Karabulut M. and Mamedov G.M., "Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals", Appl Phys B Lasers, 98: 77-81, (2010).
  • [41] Yuksek M., Elmali A., Karabulut M. and Mamedov G.M., "Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal", Opt Mater, 31: 1663-1666, (2009).
  • [42] Dabbicco M. and Brambilla M., "Dispersion of the twophoton absorption coefficient in ZnSe", Solid State Commun, 114: 515-519, (2000).
  • [43] Imangholi B., Hasselbeck M.P. and Sheik-Bahae M., "Absorption spectra of wide-gap semiconductors in their transparency region", Opt Commun, 227: 337-341, (2003).
  • [44] Fox, E. C, van Driel H. M., H.M., "Femtosecond Probing of Photoinduced Refractive Index Changes in Semiconductors", Ultrashort Processes in Condensed Matter, Plenum Press, New York, 1993. [45] Vanstryland E.W., Sheikbahae M., Said A.A., Hagan D.J., Soileau M.J., "Laser Induced Damage" Opt Mater, 1993 (2114): 444-468, (1994).
  • [46] Tao X., Mafi E., Gu Y., Ultrafast carrier dynamics in single-crystal In2Se3 thin layers", Appl Phys Lett, 103(19): 193115, (2013).
  • [47] Pepe Y., Tutel Y., Yildiz E. A., Karatay A., Unalan H. E., Elmali A., "Thermally Induced Phase Transition and Defect-Assisted Nonlinear Absorption and Optical Limiting in Nanorod Morphology V2O5 Thin Films", Adv. Eng. Mater, 2100468, (2021).
  • [48] Pepe Y., Karatay A., Donar Y. O., Yildiz E. A., Sinağ A., Unver H., Elmali A., “Enhanced nonlinear absorption coefficient and low optical limiting threshold of NiO nanocomposite films”, Optik, 227, 165975, (2021).
There are 47 citations in total.

Details

Primary Language Turkish
Subjects Engineering
Journal Section Research Article
Authors

Elif Yıldız 0000-0001-6485-4660

Publication Date March 27, 2023
Submission Date May 5, 2021
Published in Issue Year 2023 Volume: 26 Issue: 1

Cite

APA Yıldız, E. (2023). GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri. Politeknik Dergisi, 26(1), 161-168. https://doi.org/10.2339/politeknik.933320
AMA Yıldız E. GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri. Politeknik Dergisi. March 2023;26(1):161-168. doi:10.2339/politeknik.933320
Chicago Yıldız, Elif. “GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama Ve İki Foton Soğurma Özellikleri Üzerine Etkileri”. Politeknik Dergisi 26, no. 1 (March 2023): 161-68. https://doi.org/10.2339/politeknik.933320.
EndNote Yıldız E (March 1, 2023) GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri. Politeknik Dergisi 26 1 161–168.
IEEE E. Yıldız, “GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri”, Politeknik Dergisi, vol. 26, no. 1, pp. 161–168, 2023, doi: 10.2339/politeknik.933320.
ISNAD Yıldız, Elif. “GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama Ve İki Foton Soğurma Özellikleri Üzerine Etkileri”. Politeknik Dergisi 26/1 (March 2023), 161-168. https://doi.org/10.2339/politeknik.933320.
JAMA Yıldız E. GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri. Politeknik Dergisi. 2023;26:161–168.
MLA Yıldız, Elif. “GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama Ve İki Foton Soğurma Özellikleri Üzerine Etkileri”. Politeknik Dergisi, vol. 26, no. 1, 2023, pp. 161-8, doi:10.2339/politeknik.933320.
Vancouver Yıldız E. GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri. Politeknik Dergisi. 2023;26(1):161-8.