Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi

Year 2018, , 915 - 921, 01.06.2018

Ayşegül Kahraman , Ercan Yılmaz

https://doi.org/10.16984/saufenbilder.327593

Cited By: 1

Abstract

 

Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin
(R_s) Sc₂O₃ (Skandiyum oksit) MOS (Metal Oksit
Yarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansa
bağlı olarak incelemektir. Sc₂O₃ MOS kapasitörü RF
magnetron saçtırma sistemi ile p tipi Si (100) üzerine üretilmiştir. Kapasitörün
kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/ω-V) değişimleri, 50 kHz ile 1
MHz arasında değişen altı farklı frekansta ölçülmüştür. Elde edilen sonuçlar,
C-V eğrisinin yığılım bölgesinde kapasitans değerlerinin R_s etkisi
nedeniyle beklenenden daha düşük olduğunu göstermiştir. G/ω-V
karakteristiklerinde ise bu etki nedeniyle pikler belirgin bir şekilde
oluşmamıştır. Bu nedenle, ölçüm sonuçlarına R_s düzeltmesi
yapıldıktan sonra, Sc₂O₃/Si ara yüzeyinde oluşan tuzak
yüklerinin elektriksel karakteristik üzerine etkisi incelenmiştir. Frekansın
azalmasıyla birlikte ara yüzey tuzak yükleri, AC voltaj sinyalini takip ederek
ölçülen kapasitansa katkı sağlamışlardır. Düzeltilmiş C-V ve G/ω-V
ölçümlerinden yararlanılarak p tipi Si için taşıyıcı konsantrasyonu (N_a),
bariyer yüksekliği (Φ_B) ve Fermi seviyesi - değerlik bandı
arasındaki enerji farkı (E_F) değerleri hesaplanmıştır.

The purpose of this study is to examine the effects of
interface states and series resistance (R_s) on the electrical
characteristic of Sc₂O₃ (Scandium oxide) MOS (Metal Oixde
Semiconductor) capacitor depending on frequency. Sc₂O₃ MOS
capacitor was produced on p type Si (100) with RF magnetron sputtering. Capacitance-voltage
(C-V) and Conductance-voltage (G/ω-V) variations of the capacitor were measured
in six different frequencies ranging from 50 kHz to 1 MHz. The obtained results
showed that the capacitance values in the accumulation region of the C-V curve were
lower than expected due to the R_s effect. The peaks were not clearly
formed due to this effect in the G/ω-V
characteristics. For this reason, the effect of trap charges on the electrical
characteristics of the Sc₂O₃/Si interface was
investigated after R_s correction applied to the experimental
results. The interface trap-charges contributed to the measured capacitance
with decreasing frequency by following the AC voltage signal. The carrier
concentration for p type Si (N_a), barrier height (Φ_B),
and energy difference between the bulk Fermi level and valance band edge (E_F)
values were calculated by using corrected C-V and G/ω-V measurements.

Keywords

yüksek-k, MOS, Sc2O3, Seri direnç, ara yüzey seviyeleri

Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor

Abstract

The purpose of this study is to examine the effects of interface
states and series resistance (R_s) on the electrical characteristic
of Sc₂O₃ (Scandium oxide) MOS (Metal Oixde Semiconductor)
capacitor depending on frequency. Sc₂O₃ MOS capacitor was
produced on p type Si (100) with RF magnetron sputtering. Capacitance-voltage
(C-V) and Conductance-voltage (G/ω-V) variations of the capacitor were measured
in six different frequencies ranging from 50 kHz to 1 MHz. The obtained results
showed that the capacitance values in the accumulation region of the C-V curve
were lower than expected due to the R_s effect. The peaks were not
clearly formed due to this effect in the G/ω-V characteristics. For this
reason, the effect of trap charges on the electrical characteristics of the Sc₂O₃/Si
interface was investigated after R_s correction applied to the
experimental results. The interface trap-charges contributed to the measured
capacitance with decreasing frequency by following the AC voltage signal. The
carrier concentration for p type Si (N_a), barrier height (Φ_B),
and energy difference between the bulk Fermi level and valance band edge (E_F)
values were calculated by using corrected C-V and G/ω-V measurements. 

Keywords

high-k, MOS, Sc2O3, series resistance, interface states

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