Analysis of Silicon Solar Cell Device Parameters using PC1D

Year 2019, , 1190 - 1197, 01.12.2019

Al-montazer Mandong , Abdullah Üzüm

https://doi.org/10.16984/saufenbilder.557490

Cited By: 11

Abstract

Perceiving
the role of each layer relevant to the parameters in a silicon solar cell is
important for engineering of solar structures for high efficiencies. PC1D
simulation of silicon solar cells were carried out in this work to evaluate the
performance parameters of each layer and outcomes were analyzed considering
their effects in final cell. Absorber layer, emitter layer, antireflection
coating layer and back surface field layer were studied especially in terms of
doping levels, thicknesses, absorbance behavior and final cell performance. The
short circuit current density (J_sc) is found to be directly
proportional to the absorber layer thickness until the thickness of 160µm whereas
the open circuit voltage (V_oc) is inversely proportional for the
range of 30 to 280µm. The device with 2x10²⁰ cm^-3 doping
concentration of emitter was more efficient for homogenous emitter solar cells.
The thickness of emitter has degrading effects on the efficiency of the device,
the device with 0.1µm emitter thickness is found to have the highest
efficiency. Doping concentration of back surface field had considerable effect
on V_oc of the device for the range of 3x10¹⁷ to 3x10¹⁸
cm^-3. Triple layer antireflection coating improved the short circuit
current density by a ratio of 50.8% and overall efficiency by a ratio of 51.07%
comparing to the those of the cells without antireflection coating. Measured
data of a fabricated high efficiency solar cell was in conformity with the
results of the simulation. According the performed studies and achieved
results, understanding and estimating the effects of these primary parameters
on solar cell performance is beneficial for designing a high efficiency solar
cell structure.

Keywords

PC1D, solar cell, crystalline silicon

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