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Year 2020, , 1040 - 1052, 01.10.2020

Gülçin Ersöz Demir , İbrahim Yücedağ

https://doi.org/10.16984/saufenbilder.744111

Abstract

References

  • J. Zhang, G. Zhao, Y. Li, Y. Li, and W. Liu, “Effect of Al-Zr co-doping on the electrical properties of graphene/ZnO Schottky contact,” Materials Research Express, vol. 6, no. 12, pp. 125911, 2020.
  • A. Demir, İ. Yücedağ, G. Ersöz, Ş. Altındal, N. Baraz, and M. Kandaz, “A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si and Au/Biphenylsubs-CoPc/n-Si Type Schottky Barrier Diodes,” Journal of Nanoelectronics and Optoelectronics, vol. 11, no. 5, pp. 620-625, 2016.
  • Ç. S. Güçlü, A. F. Özdemir, A. Kökce, and Ş. Altındal, “Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature,” Acta Physica Polonica A, vol. 130, no. 1, pp. 325-330, 2016.
  • N. Kumar and S. Chand, “Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes,” Journal of Alloys and Compounds, vol. 817, pp. 153294, 2020.
  • S. M. Sze and K. K. Ng “Physics of semiconductor devices,” New York: John Wiley & Sons, 2006.
  • E. H. Rhoderick and R. H. Williams, “Metal Semiconductor Contacts,” Oxford: Oxford University Press, 1988.
  • E. H. Nicollian and J. R. Brews, “MOS (metal oxide semiconductor) physics and technology,” New York: John Wiley & Sons, 1982.
  • Y. Zhou, M. Ogawa, X. Han, and K. Wang, “Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide,” Applied Physics Letters, vol. 93, no. 20, pp. 202105(1-3), 2008.
  • S. Zheng, W. Yang, Q. Sun, L. Chen, P. Zhou, P. Wang, D. Zhang, and F. Xiao, “Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics,” Applied Physics Letters, vol. 103, no. 26, pp. 261602(1-4), 2013.
  • Ç. G. Türk, S. O. Tan, Ş. Altındal, and B. İnem, “Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage,” Physica B: Condensed Matter, vol. 582, pp. 411979(1-8), 2020.
  • A. Baradeswaran and A. E. Perumal, “Study on mechanical and wear properties of Al 7075/Al2O3/graphite hybrid composites,” Composites Part B: Engineering, vol. 56, pp. 464-471, 2014.
  • M. W. Akhtar, Y. S. Lee, D. J. Yoo, and J. S. Kim, “Alumina-graphene hybrid filled epoxy composite: Quantitative validation and enhanced thermal conductivity,” Composites Part B: Engineering, vol. 131, pp. 184-195, 2017.
  • S. Hlali, N. Hizem, and A. Kalboussi, “High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C-V characteristics,” Journal of Computational Electronics, vol. 15, no. 4, pp. 1340-1350, 2016.
  • G. D. Wilk, R. M. Wallace, and J. M. Anthony, “High-κ gate dielectrics: Current status and materials properties considerations,” Journal of Applied Physics, vol. 89, no. 10, pp. 5243-5275, 2001.
  • D. Shahrjerdi, E. Tutuc, and S. K. Banerjee, “Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric,” Applied Physics Letters, vol. 91, no. 6, pp. 063501(1-4), 2007.
  • D. Hoogeland, K. B. Jinesh, F. Roozeboom, W. F. Besling, M. C. M.Van De Sanden, and W. M. M. Kessels, “Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications,” Journal of Applied Physics, vol. 106, no. 11, pp. 114107(1-7), 2009.
  • Y. Xuan, P. D. Ye, and H. C. Lin, “Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric,” Applied Physics Letters, vol. 89, no. 13, pp. 132103(1-3), 2006.
  • G. Dingemans and W. M. M. Kessels, “Aluminum oxide and other ALD materials for Si surface passivation,” ECS Transactions, vol. 41, no. 2, pp. 293-301, 2011.
  • J. Benick, A. Richter, M. Hermle, and S. W. Glunz, “Thermal stability of the Al2O3 passivation on p‐type silicon surfaces for solar cell applications,” Physica Status Solidi-Rapid Research Letters, vol. 3, no. 7-8, pp. 233-235, 2009.
  • G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. F. W. Dekkers, S. De Wolf, and G. Beaucarne, “Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge,” Solar Energy Materials & Solar Cells, vol. 90, no. 18-19, pp. 3438-3443, 2006.
  • J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M. C. M. Van De Sanden, and W. M. M. Kessels, “Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3,” Progress in Photovoltaics: Research and Applications, vol. 16, no. 6, pp. 461-466, 2008.
  • J. A. Cooper and A. Agarwal, “SiC power-switching devices-the second electronics revolution?,” Proceedings of the Institution of Electrical Engineers, vol. 90, no. 6, pp. 956-968, 2002.
  • R. J. Trew, J. Yan, and P. M. Mock, “The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications,” Proceedings of the Institution of Electrical Engineers, vol. 79, no. 5, pp. 598-620, 1991.
  • S. Hlali, A. Farji, N. Hizem, L. Militaru, A. Kalboussi, and A. Souifi, “High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure,” Journal of Alloys and Compounds, vol. 713, pp. 194-203, 2017.
  • S. Parui, A. Atxabal, M. Ribeiro, A. Bedoya-Pinto, X. Sun, R. Llopis, F. Casanova, and L. E. Hueso, “Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy,” Applied Physics Letters, vol. 107, no.18, pp. 183502(1-5), 2015.
  • H. Kim, Y. Kim, and B. J. Choi, “Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes,” American Institute of Physics Advances, vol. 8, no. 9, pp. 095022(1-8), 2018.
  • Ç. Ş. Güçlü, A. F. Özdemir, A. Karabulut, A. Kökçe, and Ş. Altındal, “Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs),” Materials Science in Semiconductor Processing, vol. 89, pp. 26-31, 2019.
  • F. Zhang, G. Sun, L. Zheng, S. Liu, B. Liu, L. Dong, L. Wang, W. Zhao, X. Liu, G. Yan, L. Tian, and Y. Zeng, “Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC,” Journal of Applied Physics, vol. 113, no. 4, pp. 044112, 2013.
  • E. Schilirò, R. L. Nigro, P. Fiorenza, and F. Roccaforte, “Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC,” AIP Advances, vol. 6, no. 7, pp. 075021, 2016.
  • C. M. Tanner, Y.-C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, “Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4 H-Si C,” Applied Physics Letters, vol. 91, no. 20, pp. 203510, 2007.
  • G. Ersöz, İ. Yücedağ, Y. Azizian-Kalandaragh, I. Orak, and Ş. Altındal, “Investigation of electrical characteristics in Al/CdS-PVA/p-Si (MPS) structures using impedance spectroscopy method,” Ieee Transactions on Electron Devices, vol. 63, no. 7, pp. 2948-2955, 2016.
  • İ. Yücedağ, “On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region,” Optoelectronics and Advanced Materials-Rapid Communications, vol. 3, no. 6, pp. 612-615, 2009.
  • A. Gümüş, G. Ersöz, İ. Yücedağ, S. Bayrakdar, and Ş. Altındal, “Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes,” Journal of the Korean Physical Society, vol. 67, no. 5, pp. 889-895, 2015.
  • N. Baraz, İ. Yücedağ, Y. Azizian-Kalandaragh, G. Ersöz, İ. Orak, Ş. Altındal, B. Akbari, and H. Akbari, “Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10-200 kHz,” Journal of Electronic Materials, vol. 46, no. 7, pp. 4276-4286, 2017.
  • F. I. H. Rhouma, A. Dhahri, J. Dhahri, and M. A. Valente, “Dielectric, modulus and impedance analysis of lead-free ceramics Ba0.8La0.133Ti1−xSnxO3 (x=0.15 and 0.2),” Applied Physics A Materials Science & Processing, vol. 108, no. 3, pp. 593-600, 2012.
  • N. Shiwakoti, A. Bobby, K. Asokan, and B.Antonya, “Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements,” Materials Science in Semiconductor Processing, vol. 42, pp. 378-382, 2016.
  • H. N. Chandrakala, B. R. Shivakumaraiah, and G. M. M. Siddaramaiah, “The influence of zinc oxide-cerium oxide nanoparticles on the structural characteristics and electrical properties of polyvinyl alcohol films,” Journal of Materials Science, vol. 47, no. 23, pp. 8076-8084, 2012.
  • D. E. Yıldız, M. Yıldırım, and M. Gökçen, “Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films,” Journal of Vacuum Science & Technology A, vol. 32, no. 3, pp. 031509(1-5), 2014.
  • İ. Yücedağ, A. Kaya, and Ş. Altındal, “On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures,” International Journal of Modern Physics B, vol. 28, no. 23, pp. 1450153(1-15), 2014.
  • İ. Yücedağ, A. Kaya, H. Tecimer, and Ş. Altındal, “Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures,” Materials Science in Semiconductor Processing, vol. 28, pp. 37-42, 2014.
  • A. Kaya, İ. Yücedağ, H. Tecimer, and Ş. Altındal, “A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer,” Materials Science in Semiconductor Processing, vol. 28, pp. 26-30, 2014.
  • Y. Şafak Asar, T. Asar, Ş. Altındal, and S. Özçelik, “Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes,” Journal of Alloys and Compounds, vol. 628, no. 442-449, 2015.
  • T. Badapanda, S. Sarangi, S. Parida, B. Behera, B. Ojha, and S. Anwar, “Frequency and temperature dependence dielectric study of strontium modified Barium Zirconium Titanate ceramics obtained by mechanochemical synthesis,” Journal of Materials Science: Materials in Electronics, vol. 26, no. 5, pp. 3069-3082, 2015.
  • M. N. Siddique, A. Ahmed, and P. Tripathi, “Dielectric relaxation and Hopping conduction mechanism in Ni1-xSrxO nanostructures,” Materials Chemistry and Physic, vol. 239, pp. 121959, 2020.
  • S. Kraiem, K. Khirouni, and S. Alaya, “AC electrical properties of Schottky diode based on nanocrystalline silicon thin films,” Physica B: Condensed Matter, vol. 584, pp. 412108, 2020.

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Year 2020, , 1040 - 1052, 01.10.2020

Gülçin Ersöz Demir , İbrahim Yücedağ

https://doi.org/10.16984/saufenbilder.744111

Abstract

In this study, we investigated the fabrication of Au/n-SiC (MS) and Au/Al2O3/n-SiC (MIS) type structures with atomic layer deposition (ALD) technique and their dielectric properties. The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a (-3V)-(9V) bias voltage at 300 K. The significant dielectric parameters such as dielectric constant (ε') and dielectric loss (ε"), real and imaginary parts of electrical modulus (M' and M"), loss tangent (tan) were calculated by depending on frequency and voltage from capacitance-voltage (C-V) and conductance-voltage (G/-V) data. Thereby, the effect of frequency on MS and MIS was searched in detail. The effect of the interface states occurred in the low frequency region can be attributed to the variation of the characteristic behavior of these parameters. It is clear that the dielectric parameters highly depend on the frequency and voltage at depletion and accumulation regions. Moreover, the peak position of M shifts to the left side of the graphic due to the effect of the insulating layer. It can be deduced from the obtained results that the interfacial polarization is easier at low frequencies. Also the interfacial polarization can contribute more to the variation of the dielectric properties.

Keywords

Au/Al2O3/n-SiC (MIS) type structures AC electrical conductivity Dielectric Properties Impedance measurements

References

  • J. Zhang, G. Zhao, Y. Li, Y. Li, and W. Liu, “Effect of Al-Zr co-doping on the electrical properties of graphene/ZnO Schottky contact,” Materials Research Express, vol. 6, no. 12, pp. 125911, 2020.
  • A. Demir, İ. Yücedağ, G. Ersöz, Ş. Altındal, N. Baraz, and M. Kandaz, “A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si and Au/Biphenylsubs-CoPc/n-Si Type Schottky Barrier Diodes,” Journal of Nanoelectronics and Optoelectronics, vol. 11, no. 5, pp. 620-625, 2016.
  • Ç. S. Güçlü, A. F. Özdemir, A. Kökce, and Ş. Altındal, “Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature,” Acta Physica Polonica A, vol. 130, no. 1, pp. 325-330, 2016.
  • N. Kumar and S. Chand, “Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes,” Journal of Alloys and Compounds, vol. 817, pp. 153294, 2020.
  • S. M. Sze and K. K. Ng “Physics of semiconductor devices,” New York: John Wiley & Sons, 2006.
  • E. H. Rhoderick and R. H. Williams, “Metal Semiconductor Contacts,” Oxford: Oxford University Press, 1988.
  • E. H. Nicollian and J. R. Brews, “MOS (metal oxide semiconductor) physics and technology,” New York: John Wiley & Sons, 1982.
  • Y. Zhou, M. Ogawa, X. Han, and K. Wang, “Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide,” Applied Physics Letters, vol. 93, no. 20, pp. 202105(1-3), 2008.
  • S. Zheng, W. Yang, Q. Sun, L. Chen, P. Zhou, P. Wang, D. Zhang, and F. Xiao, “Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics,” Applied Physics Letters, vol. 103, no. 26, pp. 261602(1-4), 2013.
  • Ç. G. Türk, S. O. Tan, Ş. Altındal, and B. İnem, “Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage,” Physica B: Condensed Matter, vol. 582, pp. 411979(1-8), 2020.
  • A. Baradeswaran and A. E. Perumal, “Study on mechanical and wear properties of Al 7075/Al2O3/graphite hybrid composites,” Composites Part B: Engineering, vol. 56, pp. 464-471, 2014.
  • M. W. Akhtar, Y. S. Lee, D. J. Yoo, and J. S. Kim, “Alumina-graphene hybrid filled epoxy composite: Quantitative validation and enhanced thermal conductivity,” Composites Part B: Engineering, vol. 131, pp. 184-195, 2017.
  • S. Hlali, N. Hizem, and A. Kalboussi, “High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C-V characteristics,” Journal of Computational Electronics, vol. 15, no. 4, pp. 1340-1350, 2016.
  • G. D. Wilk, R. M. Wallace, and J. M. Anthony, “High-κ gate dielectrics: Current status and materials properties considerations,” Journal of Applied Physics, vol. 89, no. 10, pp. 5243-5275, 2001.
  • D. Shahrjerdi, E. Tutuc, and S. K. Banerjee, “Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric,” Applied Physics Letters, vol. 91, no. 6, pp. 063501(1-4), 2007.
  • D. Hoogeland, K. B. Jinesh, F. Roozeboom, W. F. Besling, M. C. M.Van De Sanden, and W. M. M. Kessels, “Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications,” Journal of Applied Physics, vol. 106, no. 11, pp. 114107(1-7), 2009.
  • Y. Xuan, P. D. Ye, and H. C. Lin, “Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric,” Applied Physics Letters, vol. 89, no. 13, pp. 132103(1-3), 2006.
  • G. Dingemans and W. M. M. Kessels, “Aluminum oxide and other ALD materials for Si surface passivation,” ECS Transactions, vol. 41, no. 2, pp. 293-301, 2011.
  • J. Benick, A. Richter, M. Hermle, and S. W. Glunz, “Thermal stability of the Al2O3 passivation on p‐type silicon surfaces for solar cell applications,” Physica Status Solidi-Rapid Research Letters, vol. 3, no. 7-8, pp. 233-235, 2009.
  • G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. F. W. Dekkers, S. De Wolf, and G. Beaucarne, “Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge,” Solar Energy Materials & Solar Cells, vol. 90, no. 18-19, pp. 3438-3443, 2006.
  • J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M. C. M. Van De Sanden, and W. M. M. Kessels, “Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3,” Progress in Photovoltaics: Research and Applications, vol. 16, no. 6, pp. 461-466, 2008.
  • J. A. Cooper and A. Agarwal, “SiC power-switching devices-the second electronics revolution?,” Proceedings of the Institution of Electrical Engineers, vol. 90, no. 6, pp. 956-968, 2002.
  • R. J. Trew, J. Yan, and P. M. Mock, “The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications,” Proceedings of the Institution of Electrical Engineers, vol. 79, no. 5, pp. 598-620, 1991.
  • S. Hlali, A. Farji, N. Hizem, L. Militaru, A. Kalboussi, and A. Souifi, “High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure,” Journal of Alloys and Compounds, vol. 713, pp. 194-203, 2017.
  • S. Parui, A. Atxabal, M. Ribeiro, A. Bedoya-Pinto, X. Sun, R. Llopis, F. Casanova, and L. E. Hueso, “Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy,” Applied Physics Letters, vol. 107, no.18, pp. 183502(1-5), 2015.
  • H. Kim, Y. Kim, and B. J. Choi, “Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes,” American Institute of Physics Advances, vol. 8, no. 9, pp. 095022(1-8), 2018.
  • Ç. Ş. Güçlü, A. F. Özdemir, A. Karabulut, A. Kökçe, and Ş. Altındal, “Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs),” Materials Science in Semiconductor Processing, vol. 89, pp. 26-31, 2019.
  • F. Zhang, G. Sun, L. Zheng, S. Liu, B. Liu, L. Dong, L. Wang, W. Zhao, X. Liu, G. Yan, L. Tian, and Y. Zeng, “Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC,” Journal of Applied Physics, vol. 113, no. 4, pp. 044112, 2013.
  • E. Schilirò, R. L. Nigro, P. Fiorenza, and F. Roccaforte, “Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC,” AIP Advances, vol. 6, no. 7, pp. 075021, 2016.
  • C. M. Tanner, Y.-C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, “Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4 H-Si C,” Applied Physics Letters, vol. 91, no. 20, pp. 203510, 2007.
  • G. Ersöz, İ. Yücedağ, Y. Azizian-Kalandaragh, I. Orak, and Ş. Altındal, “Investigation of electrical characteristics in Al/CdS-PVA/p-Si (MPS) structures using impedance spectroscopy method,” Ieee Transactions on Electron Devices, vol. 63, no. 7, pp. 2948-2955, 2016.
  • İ. Yücedağ, “On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region,” Optoelectronics and Advanced Materials-Rapid Communications, vol. 3, no. 6, pp. 612-615, 2009.
  • A. Gümüş, G. Ersöz, İ. Yücedağ, S. Bayrakdar, and Ş. Altındal, “Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes,” Journal of the Korean Physical Society, vol. 67, no. 5, pp. 889-895, 2015.
  • N. Baraz, İ. Yücedağ, Y. Azizian-Kalandaragh, G. Ersöz, İ. Orak, Ş. Altındal, B. Akbari, and H. Akbari, “Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10-200 kHz,” Journal of Electronic Materials, vol. 46, no. 7, pp. 4276-4286, 2017.
  • F. I. H. Rhouma, A. Dhahri, J. Dhahri, and M. A. Valente, “Dielectric, modulus and impedance analysis of lead-free ceramics Ba0.8La0.133Ti1−xSnxO3 (x=0.15 and 0.2),” Applied Physics A Materials Science & Processing, vol. 108, no. 3, pp. 593-600, 2012.
  • N. Shiwakoti, A. Bobby, K. Asokan, and B.Antonya, “Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements,” Materials Science in Semiconductor Processing, vol. 42, pp. 378-382, 2016.
  • H. N. Chandrakala, B. R. Shivakumaraiah, and G. M. M. Siddaramaiah, “The influence of zinc oxide-cerium oxide nanoparticles on the structural characteristics and electrical properties of polyvinyl alcohol films,” Journal of Materials Science, vol. 47, no. 23, pp. 8076-8084, 2012.
  • D. E. Yıldız, M. Yıldırım, and M. Gökçen, “Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films,” Journal of Vacuum Science & Technology A, vol. 32, no. 3, pp. 031509(1-5), 2014.
  • İ. Yücedağ, A. Kaya, and Ş. Altındal, “On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures,” International Journal of Modern Physics B, vol. 28, no. 23, pp. 1450153(1-15), 2014.
  • İ. Yücedağ, A. Kaya, H. Tecimer, and Ş. Altındal, “Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures,” Materials Science in Semiconductor Processing, vol. 28, pp. 37-42, 2014.
  • A. Kaya, İ. Yücedağ, H. Tecimer, and Ş. Altındal, “A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer,” Materials Science in Semiconductor Processing, vol. 28, pp. 26-30, 2014.
  • Y. Şafak Asar, T. Asar, Ş. Altındal, and S. Özçelik, “Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes,” Journal of Alloys and Compounds, vol. 628, no. 442-449, 2015.
  • T. Badapanda, S. Sarangi, S. Parida, B. Behera, B. Ojha, and S. Anwar, “Frequency and temperature dependence dielectric study of strontium modified Barium Zirconium Titanate ceramics obtained by mechanochemical synthesis,” Journal of Materials Science: Materials in Electronics, vol. 26, no. 5, pp. 3069-3082, 2015.
  • M. N. Siddique, A. Ahmed, and P. Tripathi, “Dielectric relaxation and Hopping conduction mechanism in Ni1-xSrxO nanostructures,” Materials Chemistry and Physic, vol. 239, pp. 121959, 2020.
  • S. Kraiem, K. Khirouni, and S. Alaya, “AC electrical properties of Schottky diode based on nanocrystalline silicon thin films,” Physica B: Condensed Matter, vol. 584, pp. 412108, 2020.
There are 45 citations in total.

Details

Primary Language English
Subjects Metrology, Applied and Industrial Physics
Journal Section Research Articles
Authors

Gülçin Ersöz Demir 0000-0002-4813-4003

İbrahim Yücedağ 0000-0003-2975-7392

Publication Date October 1, 2020
Submission Date May 28, 2020
Acceptance Date August 8, 2020
Published in Issue Year 2020

Cite

APA Ersöz Demir, G., & Yücedağ, İ. (2020). Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. Sakarya University Journal of Science, 24(5), 1040-1052. https://doi.org/10.16984/saufenbilder.744111
AMA Ersöz Demir G, Yücedağ İ. Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. SAUJS. October 2020;24(5):1040-1052. doi:10.16984/saufenbilder.744111
Chicago Ersöz Demir, Gülçin, and İbrahim Yücedağ. “Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/N-SiC Metal-Insulator-Semiconductor (MIS) Structures”. Sakarya University Journal of Science 24, no. 5 (October 2020): 1040-52. https://doi.org/10.16984/saufenbilder.744111.
EndNote Ersöz Demir G, Yücedağ İ (October 1, 2020) Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. Sakarya University Journal of Science 24 5 1040–1052.
IEEE G. Ersöz Demir and İ. Yücedağ, “Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures”, SAUJS, vol. 24, no. 5, pp. 1040–1052, 2020, doi: 10.16984/saufenbilder.744111.
ISNAD Ersöz Demir, Gülçin - Yücedağ, İbrahim. “Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/N-SiC Metal-Insulator-Semiconductor (MIS) Structures”. Sakarya University Journal of Science 24/5 (October 2020), 1040-1052. https://doi.org/10.16984/saufenbilder.744111.
JAMA Ersöz Demir G, Yücedağ İ. Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. SAUJS. 2020;24:1040–1052.
MLA Ersöz Demir, Gülçin and İbrahim Yücedağ. “Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/N-SiC Metal-Insulator-Semiconductor (MIS) Structures”. Sakarya University Journal of Science, vol. 24, no. 5, 2020, pp. 1040-52, doi:10.16984/saufenbilder.744111.
Vancouver Ersöz Demir G, Yücedağ İ. Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. SAUJS. 2020;24(5):1040-52.

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