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Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Year 2018, , 121 - 131, 30.11.2018
https://doi.org/10.29233/sdufeffd.462245

Abstract

In this work, the electrical properties of heterojunctions formed by coating of undoped
Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were
investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si,
ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the
samples were thermally annealed at 450 oC for 30 minutes. Current-Voltage (I-V) and
Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit
diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations
(Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy
(DLTS) technique was used to investigate trap levels around the depletion region. The presence
of electron traps in both samples was determined.

References

  • N. Akçay, G. Algün, N. Ü. Kılıç, S. Shawuti, and M. M. Can, “Europium dependent absorption properties of Zn1−(y+0.01)(Al0.01,Euy)O (y = 0.00, 0.01, 0.03 and 0.05) thin films grown on the soda-lime glass substrates by spin coating,” J. Mater. Sci. Mater. Electron., vol. 28, no. 5, pp. 4492–4497, 2017.
  • N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah, M. Kechouane, and M. S. Aida, “Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray,” Mater. Sci. Semicond. Process., vol. 14, no. 3–4, pp. 229–234, 2011.
  • C. H. Chu, H. W. Wu, and J. L. Huang, “AZO/Au/AZO tri-layer thin films for the very low resistivity transparent electrode applications,” Mater. Sci. Eng. B Solid-State Mater. Adv. Technol., vol. 186, no. 1, pp. 117–121, 2014.
  • Y. Liu, Y. Li, and H. Zeng, “ZnO-based transparent conductive thin films: Doping, performance, and processing,” J. Nanomater., vol. 2013, no. Cvd, 2013.
  • L. Zhu and W. Zeng, “Room-temperature gas sensing of ZnO-based gas sensor: A review,” Sensors Actuators, A Phys., vol. 267, pp. 242–261, 2017.
  • R. Ghosh and D. Basak, “Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/ p-Si heterojunction,” Appl. Phys. Lett., vol. 90, no. 24, pp. 2005–2008, 2007.
  • X. Zong and R. Zhu, “Zinc oxide nanorod field effect transistor for long-time cellular force measurement,” Sci. Rep., vol. 7, no. October 2016, pp. 1–8, 2017.
  • G. Algün, “Humidity sensing properties of fluorine doped zinc oxide thin films,” J. Mater. Sci. Mater. Electron., vol. 29, no. 19, pp. 17039–17046, 2018.
  • N. Üzar, G. Algün, N. Akçay, D. Akcan, and L. Arda, “Structural, optical, electrical and humudity sensing properties of (Y/Al) co-doped ZnO thin films,” J. Mater. Sci. Mater. Electron., vol. 28, no. 16, 2017.
  • R. Pietruszka, B. S. Witkowski, E. Zielony, K. Gwozdz, E. Placzek-Popko, and M. Godlewski, “ZnO/Si heterojunction solar cell fabricated by atomic layer deposition and hydrothermal methods,” Sol. Energy, 2017.
  • D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5269–5271, 2004.
  • G. Brauer, J. Kuriplach, C. C. Ling, and A. B. Djurišić, “Activities towards p-type doping of ZnO,” J. Phys. Conf. Ser., vol. 265, no. 1, 2011.
  • F. Yakuphanoglu, Y. Caglar, M. Caglar, and S. Ilican, “ZnO/p-Si heterojunction photodiode by solgel deposition of nanostructure n-ZnO film on p-Si substrate,” Mater. Sci. Semicond. Process., vol. 13, no. 3, pp. 137–140, 2010.
  • X. Wang et al., “ZnO thin film grown on silicon by metal-organic chemical vapor deposition,” J. Cryst. Growth, vol. 243, no. 1, pp. 13–18, 2002.
  • Y. S. Ocak, “Electrical characterization of DC sputtered ZnO/p-Si heterojunction,” J. Alloys Compd., vol. 513, pp. 130–134, 2012.
  • A. A. Ibrahim and A. Ashour, “ZnO/Si solar cell fabricated by spray pyrolysis technique,” J. Mater. Sci. Mater. Electron., 2006.
  • K. Gwozdz et al., “Deep traps in the ZnO nanorods/Si solar cells,” J. Alloys Compd., vol. 708, pp. 247–254, 2017.
  • T. Hanada, “Basic Properties of ZnO, GaN, and Related Materials,” in Oxide and Nitride Semiconductors, T. Yao and S.-K. Hong, Eds. Springer, Berlin, Heidelberg, 2009, pp. 1–19.
  • W. C. Dunlap and R. L. Watters, “Direct measurement of the dielectric constants of silicon and germanium,” Phys. Rev., vol. 92, no. 6, pp. 1396–1397, 1953.
  • D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, no. 7, pp. 3023–3032, 1974.
  • M. U. Shahid, K. M. Deen, A. Ahmad, M. A. Akram, M. Aslam, and W. Akhtar, “Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization,” Appl. Nanosci., vol. 6, no. 2, pp. 235–241, 2016.
  • C. E. Stutz, “Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements,” J. Electron. Mater., vol. 30, no. 12, pp. 2–4, 2001.
  • J.-C. Lin, M.-C. Huang, T. Wang, J.-N. Wu, Y.-T. Tseng, and K.-C. Peng, “Structure and characterization of the sputtered ZnO, Al-doped ZnO, Ti-doped ZnO and Ti, Al-co-doped ZnO thin films,” Mater. Express, vol. 5, no. 2, pp. 153–158, 2015.
  • A. Kaphle and P. Hari, “Characterization of Aluminum Doped Nanostructured ZnO/p-Si Heterojunctions,” Int. J. Eng. Sci., pp. 2319–1813, 2016.

Sol-Jel Yöntemi ile Üretilen ZnO(Al)/p-Si Heteroekleminin Elektriksel Karakterizasyonu

Year 2018, , 121 - 131, 30.11.2018
https://doi.org/10.29233/sdufeffd.462245

Abstract

Bu çalışmada, p-tipi Silisyum
(p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit
(ZnOAl) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri
incelenmiştir. ZnO ve ZnOAl nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve
ZnO/p-Si, ZnOAl/p-Si heteroeklemleri döndürme kaplama tekniği ile
oluşturulmuştur. Kaplama sonrası örneklere 450
oC’de 30 dk termal
tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve
Kapasite-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip
diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından
diyotların bariyer yüksekliği (Vbi) ve taşıyıcı
konsantrasyonları (
Nd)
hesaplandı
. Derin seviye
geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak
seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı
tespit edilmiştir.

References

  • N. Akçay, G. Algün, N. Ü. Kılıç, S. Shawuti, and M. M. Can, “Europium dependent absorption properties of Zn1−(y+0.01)(Al0.01,Euy)O (y = 0.00, 0.01, 0.03 and 0.05) thin films grown on the soda-lime glass substrates by spin coating,” J. Mater. Sci. Mater. Electron., vol. 28, no. 5, pp. 4492–4497, 2017.
  • N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah, M. Kechouane, and M. S. Aida, “Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray,” Mater. Sci. Semicond. Process., vol. 14, no. 3–4, pp. 229–234, 2011.
  • C. H. Chu, H. W. Wu, and J. L. Huang, “AZO/Au/AZO tri-layer thin films for the very low resistivity transparent electrode applications,” Mater. Sci. Eng. B Solid-State Mater. Adv. Technol., vol. 186, no. 1, pp. 117–121, 2014.
  • Y. Liu, Y. Li, and H. Zeng, “ZnO-based transparent conductive thin films: Doping, performance, and processing,” J. Nanomater., vol. 2013, no. Cvd, 2013.
  • L. Zhu and W. Zeng, “Room-temperature gas sensing of ZnO-based gas sensor: A review,” Sensors Actuators, A Phys., vol. 267, pp. 242–261, 2017.
  • R. Ghosh and D. Basak, “Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/ p-Si heterojunction,” Appl. Phys. Lett., vol. 90, no. 24, pp. 2005–2008, 2007.
  • X. Zong and R. Zhu, “Zinc oxide nanorod field effect transistor for long-time cellular force measurement,” Sci. Rep., vol. 7, no. October 2016, pp. 1–8, 2017.
  • G. Algün, “Humidity sensing properties of fluorine doped zinc oxide thin films,” J. Mater. Sci. Mater. Electron., vol. 29, no. 19, pp. 17039–17046, 2018.
  • N. Üzar, G. Algün, N. Akçay, D. Akcan, and L. Arda, “Structural, optical, electrical and humudity sensing properties of (Y/Al) co-doped ZnO thin films,” J. Mater. Sci. Mater. Electron., vol. 28, no. 16, 2017.
  • R. Pietruszka, B. S. Witkowski, E. Zielony, K. Gwozdz, E. Placzek-Popko, and M. Godlewski, “ZnO/Si heterojunction solar cell fabricated by atomic layer deposition and hydrothermal methods,” Sol. Energy, 2017.
  • D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5269–5271, 2004.
  • G. Brauer, J. Kuriplach, C. C. Ling, and A. B. Djurišić, “Activities towards p-type doping of ZnO,” J. Phys. Conf. Ser., vol. 265, no. 1, 2011.
  • F. Yakuphanoglu, Y. Caglar, M. Caglar, and S. Ilican, “ZnO/p-Si heterojunction photodiode by solgel deposition of nanostructure n-ZnO film on p-Si substrate,” Mater. Sci. Semicond. Process., vol. 13, no. 3, pp. 137–140, 2010.
  • X. Wang et al., “ZnO thin film grown on silicon by metal-organic chemical vapor deposition,” J. Cryst. Growth, vol. 243, no. 1, pp. 13–18, 2002.
  • Y. S. Ocak, “Electrical characterization of DC sputtered ZnO/p-Si heterojunction,” J. Alloys Compd., vol. 513, pp. 130–134, 2012.
  • A. A. Ibrahim and A. Ashour, “ZnO/Si solar cell fabricated by spray pyrolysis technique,” J. Mater. Sci. Mater. Electron., 2006.
  • K. Gwozdz et al., “Deep traps in the ZnO nanorods/Si solar cells,” J. Alloys Compd., vol. 708, pp. 247–254, 2017.
  • T. Hanada, “Basic Properties of ZnO, GaN, and Related Materials,” in Oxide and Nitride Semiconductors, T. Yao and S.-K. Hong, Eds. Springer, Berlin, Heidelberg, 2009, pp. 1–19.
  • W. C. Dunlap and R. L. Watters, “Direct measurement of the dielectric constants of silicon and germanium,” Phys. Rev., vol. 92, no. 6, pp. 1396–1397, 1953.
  • D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, no. 7, pp. 3023–3032, 1974.
  • M. U. Shahid, K. M. Deen, A. Ahmad, M. A. Akram, M. Aslam, and W. Akhtar, “Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization,” Appl. Nanosci., vol. 6, no. 2, pp. 235–241, 2016.
  • C. E. Stutz, “Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements,” J. Electron. Mater., vol. 30, no. 12, pp. 2–4, 2001.
  • J.-C. Lin, M.-C. Huang, T. Wang, J.-N. Wu, Y.-T. Tseng, and K.-C. Peng, “Structure and characterization of the sputtered ZnO, Al-doped ZnO, Ti-doped ZnO and Ti, Al-co-doped ZnO thin films,” Mater. Express, vol. 5, no. 2, pp. 153–158, 2015.
  • A. Kaphle and P. Hari, “Characterization of Aluminum Doped Nanostructured ZnO/p-Si Heterojunctions,” Int. J. Eng. Sci., pp. 2319–1813, 2016.
There are 24 citations in total.

Details

Primary Language Turkish
Subjects Metrology, Applied and Industrial Physics
Journal Section Makaleler
Authors

Namık Akçay 0000-0003-1660-213X

Publication Date November 30, 2018
Published in Issue Year 2018

Cite

IEEE N. Akçay, “Sol-Jel Yöntemi ile Üretilen ZnO(Al)/p-Si Heteroekleminin Elektriksel Karakterizasyonu”, Süleyman Demirel University Faculty of Arts and Science Journal of Science, vol. 13, no. 2, pp. 121–131, 2018, doi: 10.29233/sdufeffd.462245.