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Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Year 2014, Volume: 9 Issue: 2, 132 - 136, 31.12.2014

Abstract

In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position

References

  • Roth L.M., Lax B., Zwerdling S., 1959. Theory of optical magneto-absorption effects in semiconductors, Physical Review, 114: 90-104.
  • Ivchenko E.L., 2005. Optical Spectroscopy of Semiconductor Nanostructures. Alpha Science International Ltd. Harrow, U.K., 427 p.
  • Ivchenko E.L., Kiselev A.A. and Willander M. , 1997. Electronic g-factor in biased quantum wells, Solid State Communications, 102(5): 375-378.
  • Ivchenko E.L., Kocheereshko V.P., Uraltsev İ.N.,and Yakovlev D.R., 1992. In High Magnetic field in Semiconductor Physics , Ed.G.Landüer, Springer Series in Solid-state Science, 101:533.
  • Ивченко Е.Л., Киселев А. А. , 1992. Электнонный g- фактор в квантовых ямах и сверхрешетках, ФТП, 26: 8.
  • Ивченко Е.Л., Киселев А.А., 1996. Электнонный g- фактор в квантовых проволоках и квантовых точках, Письма в ЖЕТФ, 67(1): 41-45.
  • Ivchenko E.L., G.E. Pikus, Superlattices and Other Heterostructures, Springer-Verlag, Tiergartenstrasse 17, Heidelberg, Germany, p. 367.
  • Abramowitz M., Stegun I.A., 1964. Handbook of Mathematica Function, New York: Dover, p. 1046.
  • Flügge S, 1994. Practical Quantum Mechanics , (Berlin: Springer). 287
  • Deniz Türköz Altuğ e-posta: denizturkoz@sdu.edu.tr

Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Year 2014, Volume: 9 Issue: 2, 132 - 136, 31.12.2014

Abstract

Özet: Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür.

Anahtar kelimeler: Kane tipi yarıiletkenler, g-çarpan

Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier

Abstract: In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.

Key words: Kane type semiconductors, g-factor

References

  • Roth L.M., Lax B., Zwerdling S., 1959. Theory of optical magneto-absorption effects in semiconductors, Physical Review, 114: 90-104.
  • Ivchenko E.L., 2005. Optical Spectroscopy of Semiconductor Nanostructures. Alpha Science International Ltd. Harrow, U.K., 427 p.
  • Ivchenko E.L., Kiselev A.A. and Willander M. , 1997. Electronic g-factor in biased quantum wells, Solid State Communications, 102(5): 375-378.
  • Ivchenko E.L., Kocheereshko V.P., Uraltsev İ.N.,and Yakovlev D.R., 1992. In High Magnetic field in Semiconductor Physics , Ed.G.Landüer, Springer Series in Solid-state Science, 101:533.
  • Ивченко Е.Л., Киселев А. А. , 1992. Электнонный g- фактор в квантовых ямах и сверхрешетках, ФТП, 26: 8.
  • Ивченко Е.Л., Киселев А.А., 1996. Электнонный g- фактор в квантовых проволоках и квантовых точках, Письма в ЖЕТФ, 67(1): 41-45.
  • Ivchenko E.L., G.E. Pikus, Superlattices and Other Heterostructures, Springer-Verlag, Tiergartenstrasse 17, Heidelberg, Germany, p. 367.
  • Abramowitz M., Stegun I.A., 1964. Handbook of Mathematica Function, New York: Dover, p. 1046.
  • Flügge S, 1994. Practical Quantum Mechanics , (Berlin: Springer). 287
  • Deniz Türköz Altuğ e-posta: denizturkoz@sdu.edu.tr
There are 10 citations in total.

Details

Primary Language Turkish
Subjects Metrology, Applied and Industrial Physics
Journal Section Makaleler
Authors

Arif Babanlı This is me

Deniz Türköz Altuğ This is me

Publication Date December 31, 2014
Published in Issue Year 2014 Volume: 9 Issue: 2

Cite

IEEE A. Babanlı and D. Türköz Altuğ, “Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı”, Süleyman Demirel University Faculty of Arts and Science Journal of Science, vol. 9, no. 2, pp. 132–136, 2014.