Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Year 2014, Volume: 9 Issue: 2, 132 - 136, 31.12.2014

Arif Babanlı Deniz Türköz Altuğ

Abstract

In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position

Keywords

Kane type semiconductors, g-factor

Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Abstract

Özet: Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür.

Anahtar kelimeler: Kane tipi yarıiletkenler, g-çarpan

Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier

Abstract: In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.

Key words: Kane type semiconductors, g-factor

Keywords

Kane tipi yarıiletkenler, g-çarpan

References

• Roth L.M., Lax B., Zwerdling S., 1959. Theory of optical magneto-absorption effects in semiconductors, Physical Review, 114: 90-104.
• Ivchenko E.L., 2005. Optical Spectroscopy of Semiconductor Nanostructures. Alpha Science International Ltd. Harrow, U.K., 427 p.
• Ivchenko E.L., Kiselev A.A. and Willander M. , 1997. Electronic g-factor in biased quantum wells, Solid State Communications, 102(5): 375-378.
• Ivchenko E.L., Kocheereshko V.P., Uraltsev İ.N.,and Yakovlev D.R., 1992. In High Magnetic field in Semiconductor Physics , Ed.G.Landüer, Springer Series in Solid-state Science, 101:533.
• Ивченко Е.Л., Киселев А. А. , 1992. Электнонный g- фактор в квантовых ямах и сверхрешетках, ФТП, 26: 8.
• Ивченко Е.Л., Киселев А.А., 1996. Электнонный g- фактор в квантовых проволоках и квантовых точках, Письма в ЖЕТФ, 67(1): 41-45.
• Ivchenko E.L., G.E. Pikus, Superlattices and Other Heterostructures, Springer-Verlag, Tiergartenstrasse 17, Heidelberg, Germany, p. 367.
• Abramowitz M., Stegun I.A., 1964. Handbook of Mathematica Function, New York: Dover, p. 1046.
• Flügge S, 1994. Practical Quantum Mechanics , (Berlin: Springer). 287
• Deniz Türköz Altuğ e-posta: [e-mail]