Cu₂ZnSnSe₄ İnce Filmleri Üzerindeki Tavlama Etkileri: Yapısal, Elektriksel ve Optik Karakterizasyon

Abstract

Bu çalışma, termal buharlaştırma yöntemiyle üretilen Cu₂ZnSnSe₄ ince filmlerin yapısal, elektriksel ve optik özellikleri üzerine tavlama işleminin etkilerini araştırmayı amaçlamaktadır. SEM-EDAX, XRD ve Raman analizlerinden elde edilen sonuçlar, CZTSe ince filmlerin başarılı bir şekilde üretildiğini ortaya koymuştur. Tavlama sıcaklığına bağlı olarak, tane boyutunda artış ve küresel şekilli tanelerden çubuk biçimli yapılara doğru bir morfolojik dönüşüm gözlemlenmiştir. Oda sıcaklığındaki özdirencin, artan tavlama sıcaklığı ile birlikte azaldığı belirlenmiş; bu değerler sırasıyla 400 °C, 500 °C ve 600 °C'de tavlanan filmler için 44,10 Ω-cm, 2,61 Ω-cm ve 3,08 Ω-cm olarak ölçülmüştür. Aynı örnekler için Hall etkisi ölçümleriyle elde edilen taşıyıcı yoğunlukları sırasıyla 5,13×10¹⁵ cm⁻³, 3,07×10¹⁷ cm⁻³ ve 1,09×10¹⁷ cm⁻³ olup, tüm örneklerde p-tipi iletkenlik gözlemlenmiştir. Tavlanmamış ve tavlanmış ince filmler sırasıyla 1,98 eV, 1,78 eV, 1,35 eV ve 1,65 eV optik bant aralığı değerleri sergilemiştir.

Keywords

• Cu₂ZnSnSe₄ Thin Film
• Thermal Evaporation
• Structural Characterization

Annealing Effects on Cu₂ZnSnSe₄ Thin Films: Structural, Electrical, and Optical Characterization

Abstract

This study aims to explore the effects of annealing on the structural, electrical, and optical properties of Cu₂ZnSnSe₄ thin films fabricated by thermal evaporation. Results obtained from SEM equipped with EDAX, XRD, and Raman analysis revealed that CZTSe thin films were successfully obtained. Depending on the annealing temperature, increasing grain size and shifting from spherically shaped grains to rod-shaped particles were observed. The room temperature resistivity decreased with increasing annealing temperature, exhibiting values of 44.10 Ω-cm, 2.61 Ω-cm, and 3.08 Ω-cm for films annealed at 400 °C, 500 °C, and 600 °C, respectively. Carrier concentrations of the same samples obtained from Hall Effect measurements were observed as 5.13x1015 cm-3, 3.07x1017 cm-3, and 1.09x1017 cm-3 with p-type conductivity. The as-deposited and annealed thin films exhibited optical band gap values of 1.98 eV, 1.78 eV, 1.35 eV, and 1.65 eV, respectively.

Keywords

• Cu₂ZnSnSe₄ Thin Film
• Thermal Evaporation
• Structural Characterization
• Hall Effect

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