Effect of Silicon Application on Wheat Under Boron Stress
Abstract
In this study, effects of different silicon (Si)
concentrations (0.75, 5, 10 mM) on wheat under boron(B) stress, investigated by
means of some stress indicators such as tissue length, malondialdehyde (MDA),
ion leakage, relative water content (RWC) and total chlorophyll content. Stress
mitigating effects of silicon were observed mainly as reductions on membrane
damage with reduced MDA concentrations and decreased ion leakage levels. Although
necrosis was present on shoot tissues due to the boron stress, no significant
change observed on shoot and root length with the application of Si. On the
contrary, relative water content (RWC) has changed positively with the
implementation of Si under boron stress. Furthermore Si has enhanced RWC level
in Si+B co-applicated sets to the level of control plants. Total chlorophyll
content increased with the existance of 0.75 and 5 mM Si, while 10 mM Si had no
effect on the chorophyll content under boron stress. Overall, silicon was found
to have a potential to alleviate boron stress in wheat production.
Keywords
References
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Details
Primary Language
English
Subjects
Engineering
Journal Section
Research Article
Authors
Publication Date
December 25, 2019
Submission Date
March 4, 2019
Acceptance Date
September 12, 2019
Published in Issue
Year 2019 Volume: 23 Number: 3
Cited By
Tuz ve Kuraklık Stresi Altında Yetiştirilen Buğday Bitkisine (Triticum aestivum L.) Silikon Uygulamalarının Bazı Stres Parametreleri Üzerine Etkisi
Journal of the Institute of Science and Technology
https://doi.org/10.21597/jist.915426