Analysis of the Mosaic Defects in Graded and Non Graded In_xGa_1-xN Solar Cell Structures

Year 2017, Volume: 21 Issue: 1, 235 - 240, 03.02.2017

İlknur Kars Durukan , Mustafa Kemal Öztürk , Süleyman Özçelik , Ekmel Özbay

https://doi.org/10.19113/sdufbed.58096

Cited By: 1

Abstract

In this study, graded (A) In_xGa_1-xN (10.5 ≤ x ≤ 18.4) and non graded (B) In_xGa_1-xN (13.6 ≤ x ≤ 24.9) samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half-width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.

Keywords

InGaN/GaN, Solar cell; MOCVD; HRXRD; UV; XRD

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