ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

Kutsal Bozkurt

ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

Abstract

MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.

Keywords

References

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Kutsal Bozkurt This is me
Türkiye

Publication Date

June 1, 2016

Submission Date

March 14, 2016

Acceptance Date

April 25, 2016

Published in Issue

Year 2016 Volume: 34 Number: 2

IZ

https://izlik.org/JA95ZG62YU

Cite

RIS / Bibtex

APA

Bozkurt, K. (2016). ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. Sigma Journal of Engineering and Natural Sciences, 34(2), 255-259. https://izlik.org/JA95ZG62YU

AMA

1.Bozkurt K. ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. SIGMA. 2016;34(2):255-259. https://izlik.org/JA95ZG62YU

Chicago

Bozkurt, Kutsal. 2016. “ELECTROLUMINESCENCE STUDY OF InP InGaAsP InAs InP P-I-N LASER HETEROSTRUCTURE”. Sigma Journal of Engineering and Natural Sciences 34 (2): 255-59. https://izlik.org/JA95ZG62YU.

EndNote

Bozkurt K (June 1, 2016) ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. Sigma Journal of Engineering and Natural Sciences 34 2 255–259.

IEEE

[1]K. Bozkurt, “ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE”, SIGMA, vol. 34, no. 2, pp. 255–259, June 2016, [Online]. Available: https://izlik.org/JA95ZG62YU

ISNAD

Bozkurt, Kutsal. “ELECTROLUMINESCENCE STUDY OF InP InGaAsP InAs InP P-I-N LASER HETEROSTRUCTURE”. Sigma Journal of Engineering and Natural Sciences 34/2 (June 1, 2016): 255-259. https://izlik.org/JA95ZG62YU.

JAMA

1.Bozkurt K. ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. SIGMA. 2016;34:255–259.

MLA

Bozkurt, Kutsal. “ELECTROLUMINESCENCE STUDY OF InP InGaAsP InAs InP P-I-N LASER HETEROSTRUCTURE”. Sigma Journal of Engineering and Natural Sciences, vol. 34, no. 2, June 2016, pp. 255-9, https://izlik.org/JA95ZG62YU.

Vancouver

1.Kutsal Bozkurt. ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. SIGMA [Internet]. 2016 Jun. 1;34(2):255-9. Available from: https://izlik.org/JA95ZG62YU