Biriktirme Sıcaklığının İtriyum Katkılı Zirkonya İnce Filmlerin Yapısal, Morfolojik ve Dielektrik Özelliklerine Etkisi

Year 2024, , 44 - 60, 29.06.2024

Şerif Rüzgar , Veysel Eratilla

https://doi.org/10.33484/sinopfbd.1369460

Abstract

Bu çalışmanın amacı, sol-gel spin-kaplama yöntemiyle hazırlanan itriya ile stabilize edilmiş zirkonya (YSZ) filmlerin yapısal, optik, morfolojik ve dielektrik özelliklerine biriktirme sıcaklığının etkisini araştırmaktır. YSZ filmlerinin X-ışını kırınımı (XRD) ölçümleri, kübik fazın tepe noktalarının belirgin olduğunu ve tepe yoğunluklarının biriktirme sıcaklığıyla birlikte arttığını gösterdi. İnce filmlerin kristalit boyutu, dislokasyon yoğunluğu ve mikro gerilimi XRD ile belirlendi. YSZ ince filmlerinin kristal boyutunun biriktirme sıcaklığıyla birlikte 16 nm'den 22 nm'ye arttığı gözlendi. Atomik Kuvvet Mikroskobu (AFM) ölçümleri sonucunda ince filmlerin yüzey pürüzlülüğünün değiştiği tespit edildi. Artan sıcaklıkla pürüzlülük 7.72 nm'den 11.92 nm'ye yükseldi. YSZ ince filmlerinin optik geçirgenliği 200-900 nm dalga boyu aralığında araştırılmış ve artan biriktirme sıcaklığıyla birlikte hafifçe arttığı bulunmuştur. Dielektrik karakterizasyonu için bu YSZ malzemelerinden Metal Oksit-Yarı İletken (MOS) cihazlar üretildi. Ag/YSZ/n-Si MOS yapısının dielektrik özellikleri araştırıldı. Bu yapıların kapasitans, iletkenlik ve diğer dielektrik parametrelerinin güçlü bir şekilde frekansa bağlı olduğu bulunmuştur.

Keywords

İtriyum stabilize zirkonya, MOS, dielektrikler, tavlama etkisi, sol jel

Project Number

BTUBAP-2019-SHMYO-01

Thanks

We would like to thank Dr. Canan Aytug Ava for her contribution to the acquisition of AFM images.

The Effect of Deposition Temperature on Structural, Morphological, and Dielectric Properties of Yttria-Doped Zirconia Thin Films

Abstract

The aim of this study was to investigate the effect of deposition temperature on the structural, optical, morphological, and dielectric properties of yttria-stabilised zirconia (YSZ) films prepared by sol-gel spin-coating method. X-ray diffraction (XRD) measurements of YSZ films showed that the peaks of the cubic phase were prominent and the peak intensities increased with deposition temperature. The crystallite size, dislocation density, and microstrain of the thin films were identified by XRD. It was observed that the crystal size of the YSZ thin films increased from 16 nm to 22 nm with the deposition temperature. The surface roughness of the thin films was found to have changed as revealed by Atomic Force Microscopy (AFM) measurements. The roughness increased from 7.72 nm to 11.92 nm with increasing temperature. The optical transmittance of the YSZ thin films was investigated in the wavelength range 200-900 nm and was found to increase slightly with increasing deposition temperature. Metal-Oxide-Semiconductor (MOS) devices were fabricated from these YSZ materials for dielectric characterization. The dielectric properties of the Ag/YSZ/n-Si MOS structure were investigated. It was found that the capacitance, conductivity and other dielectric parameters of these structures are strongly frequency dependent.

Keywords

Yttrium stabilized zirconia, MOS, dielectrics, annealing effect, sol gel

Project Number

BTUBAP-2019-SHMYO-01

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