Termal Buharlaştırma Yöntemiyle Hazırlanan Al/TiO2/p-Si Schottky Diyotun Elektriksel Özelliklerinin Sıcaklık ve Aydınlanma Şiddetine Bağlı İncelenmesi

Year 2021, Volume: 10 Issue: 1, 275 - 283, 25.06.2021

Ömer Sevgili

https://doi.org/10.46810/tdfd.934492

Cited By: 1

Abstract

Bu çalışmada kullanılan Al/TiO2/p-Si Schottky Diyotu (SD) termal buharlaştırma yöntemi kullanılarak oluşturuldu. Aygıtın elektriksel özellikleri geniş sıcaklık ve aydınlanma şiddeti aralığında gerçekleştirildi. Sıcaklığa bağlı ölçümler 20 K adım aralıklarla 100 K ve 320 K aralığında gerçekleştirildi. Aygıt için elde edilen diyot parametreleri literatürdeki çeşitli yöntemlerle elde edilen benzer yapılarla karşılaştırıldı. Yerli oksit tabaka, kirlilikler, tüketim bölgesi kalınlığı gibi nedenlerden dolayı arayüzey durumlarının değerinin yüksek olduğu sonucuna varıldı. Işık şiddetine bağlı olarak gerçekleştirilen ölçümlerde idealite faktörü değerinin artarken engel yüksekliği değerinin azaldığı görüldü. Ayrıca yapının fotoakım-zaman grafiği çizilerek ışığa tepkisi incelendi.

Keywords

Termal buharlaştırma, TiO2, Fotoakım, Sıcaklığa bağlılık, Aydınlatma şiddetine bağlılık, Elektriksel özellikler

Investigation of Dependent on Temperature and Illumination Density Electrical Properties of Al/TiO2/P-Si Schottky Diode Prepared by Thermal Evaporation

Abstract

The Al/TiO2/p-Si Schottky Diode (SD) used in this study was fabricated using the thermal evaporation method. The electrical properties of the devices were realized in a wide range of temperature and illumination intensity. Temperature dependent measurements were carried out at between 320 K and 100 K step by 20 K. The diode parameters obtained in this study were compared with similar structures obtained by various methods in the literature. It was concluded that the value of the interface states was high due to reasons such as the local oxide layer, impurities, thickness of depletion layer. In the measurements performed depending on the illumination intensity, it was observed that the value of the ideality factor increased while the value of the barrier height decreased. In addition, the photocurrent-time plot of the structure was drawn and its response to light was examined.

Keywords

thermal evaporation, TiO2, Photocurrent, temperature dependence, illumination intensity dependence, electrical properties

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