The Effect Of Cu Doping On The Structural Properties And Electrical Resistivity Of MAPbI3 Perovskite Thin Films

Year 2022, Volume: 14 Issue: 2, 544 - 551, 31.07.2022

Satiye Korkmaz

https://doi.org/10.29137/umagd.1050430

Abstract

Perovskite thin films have good power conversion efficiency because they have high carrier mobility and a long carrier lifetime. As a result of the research, the yield of perovskite materials has recently reached a maximum efficiency of 31% in the laboratory environment. To investigate the effects of doping on perovskite thin films' structural, surface, and electrical resistivity, structural properties of undoped and 10% Cu-doped perovskite thin films were characterized with XRD, FESEM, EDX, and AFM. Their electrical measurements are carried out using four-point probe method. The resistivity of undoped and 10% Cu-doped perovskite thin films decreased asymptotically with voltage increase.

Keywords

Perovskite thin film, methylamine lead iodide, electrical resistivity.

Cu katkısının MAPbI3 Perovskit İnce Filmlerin Yapısal Özellikleri ve Elektriksel Özdirenç Üzerine Etkisi

Abstract

Perovskit ince filmler yüksek taşıyıcı hareketliliği ve uzun taşıyıcı ömrüne sahip olduğundan tatmin edici bir güç dönüşüm verimliliğine sahiplerdir. Araştırmalar sonucu perovskit malzemelerin verimi son dönemlerde laboratuvar ortamında yaklaşık maksimum %31 verimliliğe ulaşmıştır. Bu amaçla katkılandırmanın perovskit ince filmlerinin yapısal, yüzeysel ve elektriksel özdirenç üzerine etkilerini araştırmak için, üretilen katkısız perovskit ince filmleri ve %10 Cu katkılı perovskit ince filmlerin XRD, EDX, FESEM ve AFM ile yapısal özellikleri ile birlikte four point probe metodu kullanılarak özdirenç ölçümleri gerçekleştirilmiştir. Katkısız perovskit ince filmleri ve %10 Cu katkılı perovskit ince filmlerin özdirençlerinin artan voltajla birlikte asimptotik olarak azaldığı belirlenmiştir.

Keywords

Perovskit ince film, metilamin kurşun iyodür, elektriksel özdirenç.

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