Some Physical Properties of the InGaAsN Thin Films Deposited by Thermionic Vacuum Arc

Abstract

In this paper, InGaAsN thin films were deposited by Thermionic Vacuum Arc (TVA) for the first time. Deposition parameters were determined. These films were grown on different type substrate material. These are glass, Si and poly Polyethylene terephthalate (PET) materials. Crystal structures of the produced samples were investigated by XRD analysis of the produced samples. Atomic concentrations of the deposited samples were investigated by EDX.  The surface properties of the films were imaged by atomic force microscopy. Band gap values were calculated by optical method from the absorbance spectra of the UV-Vis spectrophotometer. According to obtained results, different atomic ratios were detected.

Keywords

• InGaAsN,Surface properties,Optical properties,thin film

TERMİYONİK VAKUM ARK İLE ÜRETİLEN InGaAsN İNCE FİLMLERİN BAZI FİZİKSEL ÖZELLİKLERİ

Abstract

Bu çalışmada InGaAsN ince filmler ilk defa farklı bir teknik olan Termiyonik Vakum Ark (TVA) tekniği ile üretilmiştir. InGaAsN ince filmler üretilirken TVA üretim parametreleri belirlenmiştir. İnce filmler üç farklı alt taş üzerine gerçekleştirilmiştir. Bunlar cam, Si ve Polietilen tereftalat (PET) alt taş malzemedir.  Üretilen ince filmlerin XRD analizleri ile kristal yapıları aydınlatılmaya çalışılmıştır. Yüzey bileşenleri için EDX analizi kullanılmıştır. Filmlerin yüzey oluşumları atomik kuvvet mikroskobu ile görüntülendi. UV-Vis spektrofotometresi ile elde edilen soğurma değerlerinden ise yapıların yasak enerji aralıkları değerleri incelenmiştir.  Sonuçlara göre, farklı alt taşlar üzerine farklı atomik bileşimler elde edilmiştir.

Keywords

• InGAsN,Yüzey özellikleri,Optik özellikler,İnce film

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