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Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Yıl 1987, , - , 01.01.1987

Tülay Serin

https://doi.org/10.1501/commua1-2_0000000062
Cited By: 1

Öz

In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H (n- type) / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes (area 7.85xl0“3 cm2) were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.

Anahtar Kelimeler

TECHNIÇUE DIODES SCHOTTKY

Kaynakça

  • Communications, Series A2-A3: Physical Sciences and Engineering

Yıl 1987, , - , 01.01.1987

Tülay Serin

https://doi.org/10.1501/commua1-2_0000000062
Cited By: 1

Öz

Kaynakça

  • Communications, Series A2-A3: Physical Sciences and Engineering
Toplam 1 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Research Article
Yazarlar

Tülay Serin Bu kişi benim

Yayımlanma Tarihi 1 Ocak 1987
Gönderilme Tarihi 1 Ocak 1987
Yayımlandığı Sayı Yıl 1987

Kaynak Göster

APA Serin, T. (1987). Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 36. https://doi.org/10.1501/commua1-2_0000000062
AMA Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. Ocak 1987;36. doi:10.1501/commua1-2_0000000062
Chicago Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36, Ocak (Ocak 1987). https://doi.org/10.1501/commua1-2_0000000062.
EndNote Serin T (01 Ocak 1987) Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36
IEEE T. Serin, “Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., c. 36, 1987, doi: 10.1501/commua1-2_0000000062.
ISNAD Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36 (Ocak 1987). https://doi.org/10.1501/commua1-2_0000000062.
JAMA Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36. doi:10.1501/commua1-2_0000000062.
MLA Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, c. 36, 1987, doi:10.1501/commua1-2_0000000062.
Vancouver Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36.

Cited By

Effect of high temperature deposition on the diffusion of nickel in amorphous silicon thin films
Electronic Materials Letters
https://doi.org/10.1007/s13391-013-3192-1

Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering

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