The Optoelectronic Characterization of Ag doped ZnO Thin Films

Şerif Rüzgar

doi:10.17798/bitlisfen.1768075

The Optoelectronic Characterization of Ag doped ZnO Thin Films

Abstract

This study investigates the properties of silver (Ag)-doped zinc oxide (ZnO) thin films, which possess significant potential for various optoelectronic applications. The films were fabricated utilizing a cost-effective nebulizer spray technique. Structural analysis confirmed that both the undoped and Ag-doped samples crystallized in the hexagonal wurtzite phase, characteristic of ZnO. Scanning electron microscopy (SEM) revealed that the incorporation of Ag significantly altered the surface morphology, resulting in an increased grain size and the formation of more irregular surface features. Optical measurements demonstrated that while Ag doping slightly reduced the films' transmittance, it concurrently narrowed the optical band gap, thereby enhancing light absorption within the visible region. Moreover, the photoluminescence characteristics were observed to be strongly dependent on the presence of the silver dopant. Finally, current-voltage (I-V) characterization affirmed that the Ag-doped ZnO films exhibited superior photoconductivity compared to their undoped counterparts. An evaluation of the photodetector performance parameters indicated a substantial improvement in photosensitivity, which increased from a value of 14.7 in undoped ZnO to 64.2 following the incorporation of Ag.

Keywords

Project Number

BTÜBAP-2024-EKOM-06

Ethical Statement

The study is complied with research and publication ethics.

Thanks

Batman University Commission of Scientific Research Project under Grant No. BTÜBAP-2024-EKOM-06 provided support for this study.

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Details

Primary Language

English

Subjects

Condensed Matter Characterisation Technique Development, Electronic and Magnetic Properties of Condensed Matter; Superconductivity, Structural Properties of Condensed Matter

Journal Section

Research Article

Authors

Şerif Rüzgar ^*
0000-0002-4964-2202
Türkiye

Publication Date

March 24, 2026

Submission Date

August 18, 2025

Acceptance Date

February 3, 2026

Published in Issue

Year 2026 Volume: 15 Number: 1

DOI

https://doi.org/10.17798/bitlisfen.1768075

IZ

https://izlik.org/JA82GD77XT

Cite

RIS / Bibtex

APA

Rüzgar, Ş. (2026). The Optoelectronic Characterization of Ag doped ZnO Thin Films. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, 15(1), 114-122. https://doi.org/10.17798/bitlisfen.1768075

AMA

1.Rüzgar Ş. The Optoelectronic Characterization of Ag doped ZnO Thin Films. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi. 2026;15(1):114-122. doi:10.17798/bitlisfen.1768075

Chicago

Rüzgar, Şerif. 2026. “The Optoelectronic Characterization of Ag Doped ZnO Thin Films”. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi 15 (1): 114-22. https://doi.org/10.17798/bitlisfen.1768075.

EndNote

Rüzgar Ş (March 1, 2026) The Optoelectronic Characterization of Ag doped ZnO Thin Films. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi 15 1 114–122.

IEEE

[1]Ş. Rüzgar, “The Optoelectronic Characterization of Ag doped ZnO Thin Films”, Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, vol. 15, no. 1, pp. 114–122, Mar. 2026, doi: 10.17798/bitlisfen.1768075.

ISNAD

Rüzgar, Şerif. “The Optoelectronic Characterization of Ag Doped ZnO Thin Films”. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi 15/1 (March 1, 2026): 114-122. https://doi.org/10.17798/bitlisfen.1768075.

JAMA

1.Rüzgar Ş. The Optoelectronic Characterization of Ag doped ZnO Thin Films. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi. 2026;15:114–122.

MLA

Rüzgar, Şerif. “The Optoelectronic Characterization of Ag Doped ZnO Thin Films”. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, vol. 15, no. 1, Mar. 2026, pp. 114-22, doi:10.17798/bitlisfen.1768075.

Vancouver

1.Şerif Rüzgar. The Optoelectronic Characterization of Ag doped ZnO Thin Films. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi. 2026 Mar. 1;15(1):114-22. doi:10.17798/bitlisfen.1768075