Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes

Hatice Kanbur Çavuş; Murat Çavuş; Caner İldeş; Selva Büyükakkaş; Recep Şahingöz

EN

Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes

Öz

In this study, voltage and frequency dependent dielectric properties of Au/n-CdTe Schottky diodes grown by thermal evaporation method were investigated. The frequency and voltage dependent of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range of 1 kHz - 500 kHz at room temperature. Dielectric constant (ε^'), dielectric loss (ε^''), dielectric loss tangent (tan⁡δ), the ac electrical conductivity (σ_ac), and complex impedance (Z^*) were calculated from the C-V and G /ω -V characteristics and plotted as a function of frequency.

Anahtar Kelimeler

Schottky diodes, Dielectric properties, Complex impedance, Electrical Conductivity, Capacitance

Kaynakça

A. Gukasyan, A. Kvit, and Y. Klevkov, “High-Resolution PL Characterization of Impurity Segregation and Their Complex Formation on Extended Defects in CdTe,” Solid State Com., vol. 97, no. 10, pp. 897–902, Mar. 1996, doi: 10.1016/0038-1098(95)00417-3.
S. Lalitha, S. Zh. Karazhanov, P. Ravindran, and S. Senthilarasu, “Electronic Structure, Structural and Optical Properties of Thermally Evaporated CdTe Thin Films,” Physica B., vol. 387, no. 1–2, pp. 227–238, Jan. 2007, doi: 10.1016/j.physb.2006.04.008.
A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, and J. Piqueras, “Compensation and Deep Levels in II–VI Compounds,” Mater. Sci. Eng. B., vol. 42, no.1–3, pp. 302–305, Dec. 1996, doi: 10.1016/S0921-5107(96)01726-6.
X. Yi, O. Lin, X. Zhao, and K. Wong,” The Effect of Surface Preparation on Properties of Cadmium Telluride Thin Film Heterojunctions,” J. Phys. D Appl. Phys., vol. 23, no. 7, pp. 912, July 1990, doi: 10.1088/0022-3727/23/7/025.
K. Guergouri, M. S. Ferah, R. Triboulet, and Y. Marfaing, “Study of the Crystalline Quality of CdTe, CdZnTe and CdMnTe Substrates Used for Liquid Phase Epitaxy of Cd0.7Hg0.3Te,” J. Cryst. Growth, vol. 139, no. 1–2, pp. 6–14, May 1994, doi: 10.1016/0022-0248(94)90022-1.
A. Romeo, G. Khrypunov, S. Galassini, H. Zogg, and A. N. Tiwari, “Bifacial Configurations for CdTe Solar Cells,” Solar Energy Mater. Solar Cells, vol. 91, no. 15–16, pp. 1388–1391, Sep. 2007, doi: 10.1016/j.solmat.2007.03.010.
Z. R. Khan, M. Zulfequar, and M. S. Khan, “Structural, Optical, Otoluminescence, Dielectric and Electrical Studies of Vacuum-Evaporated CdTe Thin Films,” Bull. Mater. Sci., vol. 35, no. 2, pp. 169–174, Apr. 2012, doi: 10.1007/s12034-012-0274-x.
H. Kanbur, Ş. Altindal, T. Mammadov, and Y. Şafak, “Effects of Illumination on I-V, C-V and G/ω –V Characteristics of Au/n-CdTe Schottky Barrier Diodes,” J. Optoelectron. Adv. M., vol. 13, no. 6, pp. 713–718, June 2011.
M. S. Han, T. W. Kang, J. H. Leem, M. H. Lee, K. J. Kim, and T. W. Kim, “Strain Effects in CdTe/Si Heterostructures,” J. Appl. Phys., vol. 82, no. pp. 6012, June 1998, doi: 10.1063/1.366467.
S. Surabhi, K. Anurag, and S. R. Kumar, “Effect of Annealing on the Structural, Compositional and Optical Properties of CdTe Films,” Mater. Today: Proc., vol. 45, no. 6, pp. 4477–4482, Feb. 2021, doi: 10.1016/j.matpr.2020.12.988.

H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, “CdTe(111) Growth on Misoriented Si(100) Substrates by Hot-Wall Epitaxy,” J. Cryst. Growth, vol. 129, no. 3–4, pp. 686–690, Apr. 1993, doi: 10.1016/0022-0248(93)90504-P.
H. Hernández-Contreras, G. Contreras-Puente, J. Aguilar-Hernández, A. Morales-Acevedo, J. Vidal-Larramendi, and O. Vigil-Galán, “CdS and CdTe Large Area Thin Films Processed by Radio-Frequency Planar-Magnetron Sputtering,” Thin Solid Films, vol. 403, no. 404, pp.148–152, Feb. 2002, doi: 10.1016/S0040-6090(01)01523-1.
A. U. Ubale, R. J. Dhokne, P. S. Chikhlikar, V. S. Sangawar, and D. K. Kulkarni, “Characterization of Nanocrystalline Cadmium Telluride Thin Films Grown by Successive Ionic Layer Adsorption and Reaction (SILAR) Method,” Bull. Mater. Sci., vol. 29, pp.165–168, Apr. 2006, doi: 10.1007/BF02704610.
H. Nishino and Y. Nishijima, “CdTe(111)B/Si(100) Structure Grown by Metalorganic Vapor Phase Epitaxy with Te Adsorption and Annealing,” J. Cryst. Growth, vol. 167, no. 3–4, pp. 488–494, Oct. 1996, doi: 10.1016/0022-0248(96)00288-6.
S. Deivanayaki, P. Jayamurugan, R. Mariappan, and V. Ponnuswamy, “Optical and Structural Characterization of CdTe Thin Films by Chemical Bath Deposition Technique,” Chalcogenide Lett., vol. 7, no.3, pp. 159–163, Mar. 2010.
N. A. Khan, K. S. Rahman, K. A. Aris, A. M. Ali, Halina Misran, M. Akhtaruzzaman, S. K. Tiong and N. Amin, “Effect of Laser Annealing on Thermally Evaporated CdTe Thin Films for Photovoltaic Absorber Application,” Sol. Energy, vol. 173, pp. 1051–1057, Oct. 2018, doi: 10.1016/j.solener.2018.08.023.
S. Singh, R. Kumar, and K. N. Sood, “Structural and Electrical Studies of Thermally Evaporated Nanostructured CdTe Thin Films,” Thin Solid Films, vol. 519, no. 3, pp. 1078–1081, Nov. 2010, doi: 10.1016/j.tsf.2010.08.047.
J. M. Kestner, S. McElvain, S. Kelly, T. R. Ohno, L.M. Woods, and C. A. Wolden, “An Experimental and Modeling Analysis of Vapor Transport Deposition of Cadmium Telluride,” Sol. Energy Mater. Sol. Cells, vol. 83, no.1, pp. 55–65, June 2004, doi: 10.1016/j.solmat.2004.02.013.
B. Barış, “Frequency Dependent Dielectric Properties in Schottky Diodes Based on Rubrene Organic Semiconductor,” Phys. E: Low-Dimens. Syst. Nanostructures, vol. 54, pp. 171–176, Dec. 2013, doi: 10.1016/j.physe.2013.06.018.
D. K. Dhruv, S. D. Dhruv, N. Agrawal, and P. B. Patel, “Fabrication and Transport Properties of Thermally Evaporated Cadmium Selenide Thin Films for Photovoltaic Applications,” Mater. Today: Proc., vol. 55, no. 1, pp. 67–72, Feb. 2022, doi: 10.1016/j.matpr.2021.12.173.
S. S. Shaikh, Mohd Shkir, and E. U. Masumdar, “Exploration of the Spray Deposited Cadmium Telluride Thin Films for Optoelectronic Devices,” Phys. B: Condens. Matter, vol. 580, pp. 411831, Mar. 2020, doi: 10.1016/j.physb.2019.411831.
S. M. Sze, Physics of Semiconductor Devices, 2nd Edition. John Wiley & Sons, New York, 1981.
E. H. Rhoderick, and R. H. Williams, Metal–Semiconductor Contacts, 2nd Edition. Clarendon Press, Oxford, 1988.
H. Kanbur, Ş. Altındal, and A. Tataroğlu, “The Effect of Interface States, Excess Capacitance and Series Resistance in the Al/SiO2/p-Si Schottky Diodes,” Appl. Surf. Sci., vol. 252, no. 5, pp. 1732–1738, Dec. 2005, doi: 10.1016/j.apsusc.2005.03.122.
Ş. Altındal, İ. Dökme, M. M. Bülbül, N. Yalçın, and T. Serin, “The Role of the Interface Insulator Layer and Interface States on the Current-Transport Mechanism of Schottky Diodes in Wide Temperature Range,” Microelektron. Eng., vol. 83, no.3, pp. 499–505, Mar. 2006, doi: 10.1016/j.mee.2005.11.014.
P. Chattopadhyay, and B. Raychaudhuri, “Frequency Dependence of Forward Capacitance-Voltage Characteristics of Schottky Barrier Diodes,” Solid State Electron., vol. 35, no. 4, pp. 605–610, Apr. 1993, doi: 10.1016/0038-1101(93)90272-R.
I. M. Dharmadasa, G. G. Roberts, and M. C. Petty, “Electrical Properties of Au/n-CdTe Schottky Diodes,” J. Phys. D. Appl. Phys., vol. 15, no. 5, pp. 901, Nov. 1982, doi: 10.1088/0022-3727/15/5/018.
S. Gurumurthy, H. L. Bhat, and V. Kumar, “Excellent Rectifying Characteristics in Au/n-CdTe Diodes Upon Exposure to Rf Nitrogen Plasma,” Semicond. Sci. Technol., vol. 14, no. 10, pp. 909, June 1999, doi: 10.1088/0268-1242/14/10/306.
R. L. Van Meirhaeghe, R. Van de Walle, W. H. Laflere, and F. Cardon, “On the Relationship between the Surface Composition of the Substrate and the Schottky Barrier Height in Au/n‐CdTe Contacts,” J. Appl. Phys., vol. 70, no. 4, pp. 2200, May 1991, doi: 10.1063/1.349458.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Yoğun Madde Fiziği

Bölüm

Araştırma Makalesi

Yazarlar

Hatice Kanbur Çavuş ^*
0000-0001-8525-0313
Türkiye

Murat Çavuş
0000-0002-2341-6485
Türkiye

Caner İldeş Bu kişi benim
0000-0003-3168-935X
Türkiye

Selva Büyükakkaş
0000-0003-2967-1521
Türkiye

Recep Şahingöz
0000-0002-9525-8068
Türkiye

Yayımlanma Tarihi

30 Mayıs 2023

Gönderilme Tarihi

28 Şubat 2023

Kabul Tarihi

10 Nisan 2023

Yayımlandığı Sayı

Yıl 2023 Cilt: 1 Sayı: 1

IZ

https://izlik.org/JA47YN49DH

APA

Kanbur Çavuş, H., Çavuş, M., İldeş, C., Büyükakkaş, S., & Şahingöz, R. (2023). Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. Bozok Journal of Science, 1(1), 1-10. https://izlik.org/JA47YN49DH

AMA

1.Kanbur Çavuş H, Çavuş M, İldeş C, Büyükakkaş S, Şahingöz R. Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. BJS. 2023;1(1):1-10. https://izlik.org/JA47YN49DH

Chicago

Kanbur Çavuş, Hatice, Murat Çavuş, Caner İldeş, Selva Büyükakkaş, ve Recep Şahingöz. 2023. “Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes”. Bozok Journal of Science 1 (1): 1-10. https://izlik.org/JA47YN49DH.

EndNote

Kanbur Çavuş H, Çavuş M, İldeş C, Büyükakkaş S, Şahingöz R (01 Mayıs 2023) Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. Bozok Journal of Science 1 1 1–10.

IEEE

[1]H. Kanbur Çavuş, M. Çavuş, C. İldeş, S. Büyükakkaş, ve R. Şahingöz, “Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes”, BJS, c. 1, sy 1, ss. 1–10, May. 2023, [çevrimiçi]. Erişim adresi: https://izlik.org/JA47YN49DH

ISNAD

Kanbur Çavuş, Hatice - Çavuş, Murat - İldeş, Caner - Büyükakkaş, Selva - Şahingöz, Recep. “Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes”. Bozok Journal of Science 1/1 (01 Mayıs 2023): 1-10. https://izlik.org/JA47YN49DH.

JAMA

1.Kanbur Çavuş H, Çavuş M, İldeş C, Büyükakkaş S, Şahingöz R. Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. BJS. 2023;1:1–10.

MLA

Kanbur Çavuş, Hatice, vd. “Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes”. Bozok Journal of Science, c. 1, sy 1, Mayıs 2023, ss. 1-10, https://izlik.org/JA47YN49DH.

Vancouver

1.Hatice Kanbur Çavuş, Murat Çavuş, Caner İldeş, Selva Büyükakkaş, Recep Şahingöz. Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. BJS [Internet]. 01 Mayıs 2023;1(1):1-10. Erişim adresi: https://izlik.org/JA47YN49DH

Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes

Öz

Anahtar Kelimeler

Öz

Kaynakça

Ayrıntılar

Birincil Dil

Konular

Bölüm

Yazarlar

Yayımlanma Tarihi

Gönderilme Tarihi

Kabul Tarihi

Yayımlandığı Sayı

IZ

Kaynak Göster