A
novel mechanism has been reported for the intrinsic electronic properties of
the 8-Pmmn Borophene
to investigate the electronic energy spectrum and spectrum parameters of the
structure. To examine the structure, we extract the energy spectrum of the
Hamiltonian for the monolayer borophene by using analytical method.
Additionally, for the intrinsic properties, first we obtained the bare Fermi
velocity which findings of the study are consistent with experimental
results. After
obtained the bare state Fermi velocity 8-Pmmn borophene, dressed with triangular
potential and renormalized Fermi velocity has been obtained. Corresponding renormalized
Fermi velocity reshaped with the triangular potential which has non-negligible
contribution to the intrinsic properties of borophene. This finding has
important implications for developing electronic devices which made from the
boron due to increasing the controllability of the structure.
Birincil Dil | İngilizce |
---|---|
Konular | Mühendislik |
Bölüm | Research Makaleler |
Yazarlar | |
Yayımlanma Tarihi | 30 Eylül 2019 |
Kabul Tarihi | 20 Eylül 2019 |
Yayımlandığı Sayı | Yıl 2019 Cilt: 4 Sayı: 3 |
Journal of Boron by Turkish Energy Nuclear Mineral Research Agency is licensed under CC BY-NC-SA 4.0