Borofenin Si/SiO2 Substratına Kimyasal Buhar Biriktirme Yöntemiyle Direkt Olarak Sentezlenmesi ve Analizi

Yıl 2024, , 1280 - 1286, 15.11.2024

Mehmet Bay

https://doi.org/10.34248/bsengineering.1548625

Öz

Bu çalışmada, borofenin doğrudan Si/SiO2 alt taşı üzerine kimyasal buhar biriktirme metodu (KBB) ile sentezlenmesi ve analizine, ayrıca potansiyel uygulamalarına yer verilmiştir. Borofenin kalınlık kontrollü olarak homojen büyütülmesi, 2 boyutlu malzeme tabanlı yüksek performanslı cihaz üretiminde kritik öneme sahiptir. Borofen, Grafene benzer özelliklere sahip olup kristal yapısı, yüksek çekme gücü ve elektrik iletkenliği gibi özellikleri nedeniyle, sensör uygulamaları, foto detektörler, gaz sensörleri, 2 boyutlu enerji depolama uygulamaları gibi birçok alanda cazip bir malzeme haline gelmiştir. Sonuçlar, borofen tabanlı cihazların potansiyelinin yüksek olduğunu göstermektedir. Bu potansiyel, yüksek kristalli ve katmanlı iki boyutlu düzenleme gibi benzersiz yapısal özellikler nedeniyle elde edilmiştir. Metal alt taşlarında borofenin büyütülmesi, kolay bir şekilde sentezlenirken, yüksek kaliteli analiz imkânı ve performanslı cihazlar için kritik olan Si/SiO2 alt taşlarında büyütülmesi, katalizör etkisi azaldığı için daha zor olur. Bu zorluk, KBB parametreleri olan basınç, reaksiyon sıcaklığı, gaz akış oranı, kimyasal toz miktarları gibi birçok KBB parametresi optimize edilerek borofenin Si/SiO2 alt taşı üzerine başarılı şekilde büyütülmesiyle aşılmıştır.

Anahtar Kelimeler

Borofen, KBB, Si/SiO2

Proje Numarası

TÜBİTAK 20AG025, TÜBİTAK 20AG001, TÜBİTAK 124E061, ESTÜ 21GAP078

Analysis and Direct Synthesis of Borophene on Sİ/SiO2 Substrate Using CVD Method

Öz

This study presents the synthesis and analysis of borophene by chemical vapor deposition (CVD) on Si/SiO2 substrate, as well as its potential applications. The controlled growth of borophene with homogeneous thickness is crucial for the production of high-performance devices based on two-dimensional materials. Borophene, with its graphene-like properties, including crystalline structure, high tensile strength, and electrical conductivity, is a promising material for various applications, such as sensors, photodetectors, gas sensors, and 2D energy storage devices. The results demonstrate the potential of borophene for the development of essential devices. This potential is attributed to its unique structural features, including high crystallinity and layered two-dimensional arrangement. While borophene can be easily synthesized on metal substrates, its growth on Si/SiO2 substrate is more challenging due to the reduced catalyst effect. However, this challenge was overcome by optimizing the CVD parameters, including pressure, reaction temperature, gas flow rate, and chemical powder concentration, resulting in successful growth of borophene on Si/SiO2 substrate.

Anahtar Kelimeler

Borophene, CVD, Si/SiO2

Proje Numarası

TÜBİTAK 20AG025, TÜBİTAK 20AG001, TÜBİTAK 124E061, ESTÜ 21GAP078

Kaynakça

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