A Compact GaN Power Amplifier Module for New Generation Cellular Basestations

Yıl 2024, Cilt: 7 Sayı: 3, 587 - 593, 15.05.2024

Burak Berk Türk Furkan Hürcan Hüseyin Şerif Savcı Hakan Dogan

https://doi.org/10.34248/bsengineering.1455495

Öz

This paper presents a compact class-AB Power Amplifier Module (PAM) designed for new generation massive Multiple Input Multiple Output (MiMo) cellular base stations. The module is designed at the center frequency of 3.5GHz targeting Long Term Evolution (LTE) and 5G New Radio (NR) bands. The module is a hybrid design that incorporates a Gallium Nitride (GaN) High Mobility-Electron Transistor (HEMT) die, discrete components-based input, and output matching networks. The entire design is realized on an 8.5 x 5.2 mm, 2-layer Rogers4003C substrate. The module is assembled on a PCB as an open-top for post-characterization tuning. The small signal and large signal measurements are in quite good agreement. The measurement results show that the amplifier is unconditionally stable, the input return loss is 12.2 dB, the output return loss is 7.7 dB, and the small signal gain is 13.4 dB. The saturated output power is 33.3 dBm with a Power Added Efficiency of 20.1%. The small signal gain drops to 11.2 dB at around 22 dBm of input power due to GaN technology’s intrinsic soft compression characteristics.

Anahtar Kelimeler

Power amplifier module, Gallium nitride HEMT, 5G n78, LTE band 42

Kaynakça

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