Investigation of The Temperature Dependent Electrical Properties of LT-GaN Layer Grown on A Sapphire Substrate
Abstract
In this study, the electrical characterization of a low-temperature GaN (LT-GaN) layer within an InGaN/GaN blue light-emitting LED structure grown on a sapphire substrate using the Metal Organic Chemical Vapor Deposition (MOCVD) method was examined. For high-quality growth of the GaN layer on a sapphire substrate, a two-stage GaN growth process is employed, consisting of a low-temperature GaN (LT-GaN) layer and a high-temperature GaN (HT-GaN) layer. This study specifically investigates the structural and electrical properties of the LT-GaN layer, which is the first stage of the GaN growth process. Structural characterization was performed using high-resolution X-ray diffraction (HRXRD), while electrical characterization involved Hall effect measurements and current-voltage (I-V) measurements. Based on the results from structural and electrical measurements, the optimal growth temperature for the LT-GaN layer was determined, and the effect of growth temperature on the electrical properties was demonstrated.
Keywords
Gallium Nitride (GaN) , Electrical Characterization , I-V , Hall Effect Measurement
Kaynakça
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