BibTex RIS Kaynak Göster

Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects

Yıl 2015, Cilt: 36 Sayı: 3, 2090 - 2096, 13.05.2015

Samad Ghalandari Hossein Bahrami Hasti Abbasi Gholamreza Karimi

Öz

Abstract. In this study, a new structure for FD SOI MOSFET has been presented toimprove DIBL parameter and also to enhance self-heating effect. The main idea of this structure is to change the thickness of BOX layer in transistor in order to improve DIBL parameter and self-heating effect.

Anahtar Kelimeler

Self-Heating Effect FD SOI MOSFET DIBL

Kaynakça

  • Colinge,J.P.(2004) , “Silicon on Insulator Technology:Materials to VLSI” . Kluwer Academic Publishers,London.
  • Kumar,M.J., Orouji,A.A.(2005), “Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced source/drain extensions”. IEEE Trans.Electron Devices, Vol.52,pp.1568-1575.
  • Chaudhry,A.,Kumar,M.J.(2004), “Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability:A review”.IEEE Trans. On Device and Mater.Reliability,Vol.4,pp.99-109.
  • M.Braccioli, G.Curatola, Y.Yang, E.Sangiorgi, C.iegna, “Simulation of self-heating effects in different SOI MOS architectures” solid-stste Electronics.pp.445-451,2009.
  • Chaudhry and M. Jagadesh Kumar, “Controlling Short-Channel Effects in Deep- Submicron SOI MOSFETs for Improved Reliability: A Review”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 4, NO. 1, pp.99-109, MARCH 2004.
  • J.P. colinge, “Silicon On Insulator technology: materials to VLSI”, 3rd edition, Kluwer Academin Publishers, 2004. www.ITRS.com
  • [10] H.Ghanatian, M.Fathipour and H.Talebi, “Nanoscale Ultra Thin Body-Silicon-On- Insulator Field Effect Transistor with Step BOX:Self-heating and Short Channel Effects”, IEEE/ULIS,pp.325-328,Aachen,2009.
  • T. Tsuchiya, Y. sato and m. Tomizawa, “Three Mechanisms Determining Short-Channel Effects in fully-depleted SOI MOSFETs”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.45, No.5, pp.1116-1121, may 1998.

Yıl 2015, Cilt: 36 Sayı: 3, 2090 - 2096, 13.05.2015

Samad Ghalandari Hossein Bahrami Hasti Abbasi Gholamreza Karimi

Öz

Kaynakça

  • Colinge,J.P.(2004) , “Silicon on Insulator Technology:Materials to VLSI” . Kluwer Academic Publishers,London.
  • Kumar,M.J., Orouji,A.A.(2005), “Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced source/drain extensions”. IEEE Trans.Electron Devices, Vol.52,pp.1568-1575.
  • Chaudhry,A.,Kumar,M.J.(2004), “Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability:A review”.IEEE Trans. On Device and Mater.Reliability,Vol.4,pp.99-109.
  • M.Braccioli, G.Curatola, Y.Yang, E.Sangiorgi, C.iegna, “Simulation of self-heating effects in different SOI MOS architectures” solid-stste Electronics.pp.445-451,2009.
  • Chaudhry and M. Jagadesh Kumar, “Controlling Short-Channel Effects in Deep- Submicron SOI MOSFETs for Improved Reliability: A Review”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 4, NO. 1, pp.99-109, MARCH 2004.
  • J.P. colinge, “Silicon On Insulator technology: materials to VLSI”, 3rd edition, Kluwer Academin Publishers, 2004. www.ITRS.com
  • [10] H.Ghanatian, M.Fathipour and H.Talebi, “Nanoscale Ultra Thin Body-Silicon-On- Insulator Field Effect Transistor with Step BOX:Self-heating and Short Channel Effects”, IEEE/ULIS,pp.325-328,Aachen,2009.
  • T. Tsuchiya, Y. sato and m. Tomizawa, “Three Mechanisms Determining Short-Channel Effects in fully-depleted SOI MOSFETs”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.45, No.5, pp.1116-1121, may 1998.
Toplam 8 adet kaynakça vardır.

Ayrıntılar

Bölüm Derleme
Yazarlar

Samad Ghalandari Bu kişi benim

Hossein Bahrami Bu kişi benim

Hasti Abbasi Bu kişi benim

Gholamreza Karimi Bu kişi benim

Yayımlanma Tarihi 13 Mayıs 2015
Yayımlandığı Sayı Yıl 2015 Cilt: 36 Sayı: 3

Kaynak Göster

APA Ghalandari, S., Bahrami, H., Abbasi, H., Karimi, G. (2015). Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, 36(3), 2090-2096.
AMA Ghalandari S, Bahrami H, Abbasi H, Karimi G. Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. Mayıs 2015;36(3):2090-2096.
Chicago Ghalandari, Samad, Hossein Bahrami, Hasti Abbasi, ve Gholamreza Karimi. “Designing and Simulation SOI MOSFET Transistorsto Enhance DIBL Parameterand Improveself-Thermal Effects”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 36, sy. 3 (Mayıs 2015): 2090-96.
EndNote Ghalandari S, Bahrami H, Abbasi H, Karimi G (01 Mayıs 2015) Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 36 3 2090–2096.
IEEE S. Ghalandari, H. Bahrami, H. Abbasi, ve G. Karimi, “Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects”, Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, c. 36, sy. 3, ss. 2090–2096, 2015.
ISNAD Ghalandari, Samad vd. “Designing and Simulation SOI MOSFET Transistorsto Enhance DIBL Parameterand Improveself-Thermal Effects”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 36/3 (Mayıs 2015), 2090-2096.
JAMA Ghalandari S, Bahrami H, Abbasi H, Karimi G. Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. 2015;36:2090–2096.
MLA Ghalandari, Samad vd. “Designing and Simulation SOI MOSFET Transistorsto Enhance DIBL Parameterand Improveself-Thermal Effects”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, c. 36, sy. 3, 2015, ss. 2090-6.
Vancouver Ghalandari S, Bahrami H, Abbasi H, Karimi G. Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. 2015;36(3):2090-6.