ANTİMON KATKILI TiO2/n-Si METAL-YALITKAN-YARIİLETKEN DİYODUN ELEKTRİKSEL PARAMETRELERİNİN FARKLI YÖNTEMLERLE BELİRLENMESİ

Yıl 2011, Sayı: 026, 25 - 38, 15.12.2011

Savaş Sönmezoğlu Seçkin Akın

Öz

Metal-yalıtkan-yarıiletken (MIS) diyotların, I-V karakteristikleri yardımıyla elde
edilen parametreleri elektronik tasarımlarda önemli yer tutmaktadır. Çığ gibi
büyüyen elektronik sanayisinde, değişik yöntemlerle malzeme parametrelerinin
her geçen gün iyileştirilmesi ve çeşitliliğinin artması, malzemelerin
karakterizasyonlarından yapılan parametre hesaplamalarında yeni metotlar
bulunmasının yolunu açmıştır. Bu çalışmada, antimon katkılı TiO₂/n-Si
MIS diyot oluşturulmuş ve yapının idealite faktörü (n), engel yüksekliği ()ve seri direnç değeri (R_s)
gibi temel elektriksel parametreleri
ileri beslem I-V, Cheung fonksiyonları,
Norde metodu, Bohlin metodu, Hernandez metodu ve Chattopadhyay metodu gibi
farklı metotlarla hesaplanmıştır. Tüm yöntemlerden
elde edilen engel yüksekliği değerlerinde iyi bir uyum gözlenirken, idealite
faktörü ve seri direnç değerlerinin sırasıyla 
2.74-3.42 ile 94 - 4118arasında
değiştiği gözlenmiştir.

Anahtar Kelimeler

Sb-katkılı TiO2/n-Si MIS yapı, I-V karakteristiği, Bohlin metodu, Hernandez metodu, Chattopadhyay metodu

THE DETERMINATION OF ELECTRICAL PARAMETERS OF METAL-INSULATOR-SEMICONDUCTOR DIODES BASED ON ANTIMONY-DOPED TiO2/n-Si BY DIFFERENT METHODS

Öz

Metal-insulator-semiconductor
(MIS) diodes-parameters which are obtained by characteristics are very important in electronic design.
In rapidly developing electronic industry, the improvements of material
parameters by using various methods, hence the increasing of diversity provides
to find new methods in parameter solutions, which is calculated from material
characterizations. In this study, antimony doped TiO₂/n-Si MIS diode
was fabricated and basic electrical parameters of the device such as ideality factor (n), barrier height (), and series resistance (R_s)  were determined from the forward
bias I-V characteristics, Cheung
functions, Norde’s method, Bohlin’s
method, Hernandez’s method and
Chattopadhyay’s method. While there was a good
agreement for the values of barrier height obtained from all methods, the
ideality factor and series resistance values vary between 2.74 - 3.42 and 94 -
4118, respectively .

Anahtar Kelimeler

Sb-doped TiO2/n-Si MIS structure, I-V characteristics, Bohlin’s method, Hernandez’s method, Chattopadhyay’s method

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