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SOL-JEL SPİN KAPLAMA YÖNTEMİYLE HAZIRLANMIŞ ZnO İNCE FİLMLERİN OPTİK ÖZELLİKLERİNİN İNCELENMESİ

Yıl 2015, Sayı: 2015 Özel Sayısı, 147 - 156, 15.01.2016

Öz

Sol-jel spin kaplama yöntemi kullanılarak ZnO ve
ZnO:N ince filmler kuartz altlık üzerine hazırlandı. ZnO ince filmlere hava
ortamında 400 oC’de ZnO:N ince filmlere ise N ortamında 700 oC
sıcaklıkta 2 saat tavlama işlemi yapıldı. Hazırlanan ZnO ve ZnO:N ince
filmlerin başlangıç çözeltisindeki N oranına göre yapısal, yüzeysel ve optik
özellikleri x-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve optik
soğurma ölçümleriyle incelendi. N oranı arttıkça örneklerin yapısal, yüzeysel
ve optik özelliklerinde değişimler olduğu ve bant aralığı değerinin oda
sıcaklığında 30 meV azaldığı görüldü.

Kaynakça

  • [1] T. Aoki, Y. Hatanaka, and D. C. Look, ZnO diode fabricated by excimer-laser doping, Appl. Phys. Lett., 76, 3257, (2000).
  • [2] X.-L. Guo, J.-H. Choi, H. Tabata, and T. Kawai, Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode, Jpn. J. Appl. Phys., Part 2 40, L177, (2001).
  • [3] H. Ohta, M. Orita, M. Hirano, and H. Hosono, Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO, J. Appl. Phys. 89, 5720, (2001).
  • [4] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes, Appl. Phys. Lett. 83, 2943, (2003).
  • [5] S. Tüzemen, E. Gür, T. Yıldırım, G. Xiong and R. T. Williams, An investigation of control mechanisms of the excitonic behavior in reactively sputtered ZnO on (0001) Al2O3, J. Appl. Phys, 100, 103513, (2006).
  • [6] T. Yıldırım, E. Gür, S. Tüzemen, V. Bilgin, S. Köse, F. Atay and I. Akyüz, Wide-bandgap modificationof polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure, Physica E, 27, 290, (2005).
  • [7] D. C. Look, Recent advances in ZnO materials and devices, Mater. Sci. Eng., B, 80, 383, 2001.
  • [8]. W. Y. Liang and A. D. Yoffe, Transmission Spectra of ZnO Single Crystals, Phys. Rev. Lett. 20, 59,1968.
  • [9] B.J. Jin, S.H. Bae, S.Y. Lee, S. Im, Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition. Materials Science and Engineering B, 71, 301-305, 2000.
  • [10] S.A.Studeniken, N.Golego, M. Cocivera, Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution. J. Appl. Phys., 83(4), 2104-2111, 1998.
  • [11] A. Azam, F. Ahmed, N. Arshi, M. Chaman, A. H. Naqvi, Formation and characterization of ZnO nanopowder synthesized by sol-gel method, J Alloy Compd, 496, 399-402, 2010.
  • [12] L. Znaidi, Sol-gel-deposited ZnO films: A review, Mater. Sci. Eng., B, 174, 18-30, 2010.
  • [13] M. Sahal, B. Hartiti, A. Ridah, M. Mollar, B. Mari, Structural, electrical, and optical properties of ZnO thin films deposited by sol-gel, Microelectron J, 39, 1425-1428, 2008.
  • [14] J. Lee, A. J. Easteal, U. Pal, D. Bhattacharyya, Evolution of ZnO nanostructures in sol-gel synthesis, current applied physics, 9, 792-796, 2009.
  • [15] P. K Nayak,. J. Yang, J. Kim, S. Chung, J. Jaewook, L. Changhee, H. Yongtaek, Spin-coted Ga-doped znO transparent conducting thin films for organic light-emitting diodes, J. Phys. D: Appl. Phys., 42, 035102, (2009).
  • [16] M. Fox, , Optical Properties of Solids, Oxford University Press,, p. 4, 115, London, 2001.
  • [17] N. Serpone , D. Lawless , R. Khairutdinov, Size Effects on the Photophysical Properties of Colloidal Anatase TiO2 Particles: Size Quantization versus Direct Transitions in This Indirect Semiconductor? J. Phys. Chem., 99 (45), 16646–16654, 1995.
  • [18] L. G. Wang and A. Zunger, Cluster-Doping Approach for Wide-Gap Semiconductors: The Case of p-Type ZnO, Phys. Rev. Lett.,90, 256401:1-4, 2003.
  • [19] Y. Yan, S. B.Zhang, S. T. Pantelides, Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO, Phys. Rev. Lett.,86, 5723, 2001.

AN INVESTIGATION OF OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED USING SOL GEL SPIN COATING METHOD

Yıl 2015, Sayı: 2015 Özel Sayısı, 147 - 156, 15.01.2016

Öz

ZnO and ZnO:N thin films were prepared on quartz
glass using the sol gel spin coating methods. ZnO thin films at 400 oC
in air atmospher and ZnO:N thin films in Nitrogen Atmosphere at temperature of
700 oC were annealed for 2 h.
The effect
of
nitrogen rate in precursor on structural, morphological
and optical
properties of the ZnO thin films was
investigated by X-ray diffraction (XRD),
Scanning Electron Microscope (SEM) and Optical Absorption Measurements. It has
been observed that the
structural, morphological
and optical
properties of the ZnO thin films change as N
rate increases, and bandgap energy of thin films decreases by 30 meV at room
temperature.

Kaynakça

  • [1] T. Aoki, Y. Hatanaka, and D. C. Look, ZnO diode fabricated by excimer-laser doping, Appl. Phys. Lett., 76, 3257, (2000).
  • [2] X.-L. Guo, J.-H. Choi, H. Tabata, and T. Kawai, Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode, Jpn. J. Appl. Phys., Part 2 40, L177, (2001).
  • [3] H. Ohta, M. Orita, M. Hirano, and H. Hosono, Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO, J. Appl. Phys. 89, 5720, (2001).
  • [4] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes, Appl. Phys. Lett. 83, 2943, (2003).
  • [5] S. Tüzemen, E. Gür, T. Yıldırım, G. Xiong and R. T. Williams, An investigation of control mechanisms of the excitonic behavior in reactively sputtered ZnO on (0001) Al2O3, J. Appl. Phys, 100, 103513, (2006).
  • [6] T. Yıldırım, E. Gür, S. Tüzemen, V. Bilgin, S. Köse, F. Atay and I. Akyüz, Wide-bandgap modificationof polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure, Physica E, 27, 290, (2005).
  • [7] D. C. Look, Recent advances in ZnO materials and devices, Mater. Sci. Eng., B, 80, 383, 2001.
  • [8]. W. Y. Liang and A. D. Yoffe, Transmission Spectra of ZnO Single Crystals, Phys. Rev. Lett. 20, 59,1968.
  • [9] B.J. Jin, S.H. Bae, S.Y. Lee, S. Im, Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition. Materials Science and Engineering B, 71, 301-305, 2000.
  • [10] S.A.Studeniken, N.Golego, M. Cocivera, Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution. J. Appl. Phys., 83(4), 2104-2111, 1998.
  • [11] A. Azam, F. Ahmed, N. Arshi, M. Chaman, A. H. Naqvi, Formation and characterization of ZnO nanopowder synthesized by sol-gel method, J Alloy Compd, 496, 399-402, 2010.
  • [12] L. Znaidi, Sol-gel-deposited ZnO films: A review, Mater. Sci. Eng., B, 174, 18-30, 2010.
  • [13] M. Sahal, B. Hartiti, A. Ridah, M. Mollar, B. Mari, Structural, electrical, and optical properties of ZnO thin films deposited by sol-gel, Microelectron J, 39, 1425-1428, 2008.
  • [14] J. Lee, A. J. Easteal, U. Pal, D. Bhattacharyya, Evolution of ZnO nanostructures in sol-gel synthesis, current applied physics, 9, 792-796, 2009.
  • [15] P. K Nayak,. J. Yang, J. Kim, S. Chung, J. Jaewook, L. Changhee, H. Yongtaek, Spin-coted Ga-doped znO transparent conducting thin films for organic light-emitting diodes, J. Phys. D: Appl. Phys., 42, 035102, (2009).
  • [16] M. Fox, , Optical Properties of Solids, Oxford University Press,, p. 4, 115, London, 2001.
  • [17] N. Serpone , D. Lawless , R. Khairutdinov, Size Effects on the Photophysical Properties of Colloidal Anatase TiO2 Particles: Size Quantization versus Direct Transitions in This Indirect Semiconductor? J. Phys. Chem., 99 (45), 16646–16654, 1995.
  • [18] L. G. Wang and A. Zunger, Cluster-Doping Approach for Wide-Gap Semiconductors: The Case of p-Type ZnO, Phys. Rev. Lett.,90, 256401:1-4, 2003.
  • [19] Y. Yan, S. B.Zhang, S. T. Pantelides, Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO, Phys. Rev. Lett.,86, 5723, 2001.
Toplam 19 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Konular Metroloji,Uygulamalı ve Endüstriyel Fizik, Mühendislik
Bölüm Makaleler
Yazarlar

Tacettin Yıldırım

Aliye Çankaya Bu kişi benim

İlker Öcalan Bu kişi benim

Yayımlanma Tarihi 15 Ocak 2016
Yayımlandığı Sayı Yıl 2015 Sayı: 2015 Özel Sayısı

Kaynak Göster

APA Yıldırım, T., Çankaya, A., & Öcalan, İ. (2016). SOL-JEL SPİN KAPLAMA YÖNTEMİYLE HAZIRLANMIŞ ZnO İNCE FİLMLERİN OPTİK ÖZELLİKLERİNİN İNCELENMESİ. Journal of Science and Technology of Dumlupınar University(2015 Özel Sayısı), 147-156.