HEAT TREATMENT EFFECT ON RADIATION STABILITY OF THE SCHOTTKY BARRIER ON THE BASE OF n-Ge

Yıl 2001, Sayı: 002, 52 - 57, 15.06.2001

Ayaz Aliyev Rahim Madatov İskender Askerov A. Cem Çokrak

Öz

The analyses of the method for increase of radiation stability of semiconductor devices are given in the

present state. For this purpose in n-Ge the thermal defects have preliminarily been created and their

interaction with radiation defects in the irradiation process has been investigated by photocapacity and

photoconductivity methods.

It has been found that when interacting with radiation defects in the irradiation process, preliminarily created

thermal defects in n-Ge fonn more stable defects which lead to increase of radiation stability of diodes.

The set of the obtained experimental data indicates that at heat treatment of Germanium at temperatures of T

> 500 °C the defects with intrinsic structural disturbances of the crystal lattice itself are formed. These defects

interacting with radiation defects during irradiation form more stable defects leading to increase in radiation

stability of the material. The fact that the insertion velocity of radiation defects in thermally treated samples is

less than in thermally untreated samples indicates that thermal defects are responsible for mobile radiation

defects. The results obtained from this study are agree with the handled data.

Anahtar Kelimeler

Stability, Semiconductor, Effect, Schottky

Kaynakça

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