Endüstriyel Poli(tert-butil akrilat) yalıtımlı bir p-kanal Organik Alan Etkili Transistörün (PtBA-p-OFET) Değerlendirilmesi

Abstract

Poli(ters-bütil akrilat) (PTB-p-A), üst-kapı, alt-kontak tipinde üretilen p-kanal organik alan etkili transistörlerde (p-OFET'lerde) p-tipi yarı iletken olan Poli(3-hekzil tiofen-2,5-diil) (P3HT)'nin kullanılmasıyla izolatör katman olarak araştırılmıştır. Bunun sebebi, PTBA'nın olumlu izolatör özellikleri, iyi film oluşturma yeteneği ve elektrik yükü ayırma özellikleridir. İndiyum kalay oksit (İTO) kaynak/oluk elektrodları ve P3HT organik yarı iletken tabakası kullanılarak PTBA-p-OFET cihazları üretilmiştir. PTBA-p-OFET'lerin frekans bağımlı kapasitesi, eşik gerilimi (VTh), alan etkili hareketliliği (μFET) ve akım aç/kapat oranı (Ion/off) gibi ana parametreleri belirlemek için karakteristik grafikler çizilmiştir. PTB-p- OFET'ler 6,13x10-4 (cm2/V.s) değerinde alan etkili hareketliliği, 1,11x102 akım aç/kapat oranı ve -15,8 V eşik gerilimine sahiptir. Kondansatör yapısının kapasite-frekans özellikleri incelenmiş ve birim alan başına 7,6 nF/cm2 olduğu bulunmuştur. Bu çalışma, PtBA'nın yüksek performanslı p-OFET uygulamaları için umut verici bir malzeme olabileceğini göstermektedir.

Keywords

• Endüstriyel PtBA
• Etkili Kapasite ve Hareketlilik
• PtBA-p-OFET

Evaluation of Industrial Poly(tert-butyl acrylate) insulated A p-channel Organic Field-Effect Transistor (PtBA-p-OFET)

Abstract

Poly(tert-butyl acrylate) (PTB-p-A) has been investigated as a promising insulator layer for p-channel organic field effect transistors (p-OFETs) using the p-type semiconductor Poly(3-hexylthiophene-2,5-diyl (P3HT) due to its favorable insulating properties, good film-forming ability and electrical charge separation properties. Top-gate, bottom-contact PTBA-p-OFET devices are fabricated with Indium Thin Oxide (ITO) source/drain electrodes and a P3HT organic semiconductor layer. The frequency-dependent capacitance of the PTBA-p-OFETs was studied through a plot to determine the key parameters, including the threshold voltage (VTh), field-effect mobility (μFET), and the current on/off ratio (Ion/off) of the device. The PTB-p- OFETs exhibit field-effect mobility value of 6.13x10-4 (cm2/V.s), an on/off current ratio of 1.11x102, and a threshold voltage of -15.8 V. The capacitance-frequency characteristics of the capacitor structure were analyzed and found to have as 7.6 nF/cm2 per unit area. This work presents PTBA as a promising for high-performance p-OFET applications.

Keywords

• Industrial PtBA
• PtBA-p-OFET.
• effective capacitance and mobility.

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