BibTex RIS Kaynak Göster

Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor

Yıl 2018, Cilt: 6 Sayı: 2, 228 - 234, 01.06.2018

Özhan Ünverdi

Öz

The frictional properties of mono-layer and multilayer epitaxial graphene grown on the C terminated face of SiC has been investigated by using atomic force microscopy measurements. Epitaxially grown graphene samples were characterized by Raman spectroscopy measurements. Atomic force microscopy has been employed in ambient conditions for friction measurements using pre-calibrated cantilevers. Both Raman spectroscopy and atomic force microscopy analysis showed that the number of defects, which increases consistent with increasing number of graphene layers, plays an important role on the tribological properties of epitaxial graphene.

Anahtar Kelimeler

Friction Nanotribology Graphene SiC AtomicForce Microscopy.

Kaynakça

  • [1] Williams JA, Le HR. Tribology and MEMS. Journal of Physics. D: Applied. Physics, 2006; 39:R201-R214.
  • [2] Hölscher H, Schirmeisen A, Schwarz UD. Principles of atomic friction: From sticking atoms to superlubricity. Philosophical Transaction of Royal Society, 2008; 366:1383-1404.
  • [3] Bhushan, B. Contact mechanics of rough surface in tribology: Single asperity contact. Applied Mechanics Reviews, 1996; 49:275-297.
  • [4] Filleter T, McChesney JL, Botswick A, Rotenberg E, Emtsev KV, Seyller, Th, Horn K, Bennewitz R. Friction and dissipation in epitaxial graphene films. Physical Review Letters, 2009; 102:86102-1-86102-4.
  • [5] Marchetto D, Held C, Hausen F, Wahlish F, Dienwiebel M, Bennewitz R. Friction and wear on single-layer epitaxial graphene in multi-asperity contacts. Tribology Letters, (2012); 48:77-81.
  • [6] Shin, JY, Stromberg R, Nay R, Huang H, Wee ATS, Yang H, Bhatia CS. Frictional characteristics of exfoliated and epitaxial graphene. Carbon, (2011); 49:4070-4073.
  • [7] Lee C, Li Q, Kalb W, Liu X, Berger H, Carpick RW, Hone J. Frictional characteristics of atomically thin sheets. Science, (2010); 328:76-80.
  • [8] Çelebi C, Yanık C, Demirkol AG, Kaya İİ. Control of the graphene growth rate on capped SiC surface under strong Si confinement. Applied Surface Science, (2013); 264:56-60.
  • [9] Hass F, Varchon F, Millian-Otoya JE, Sprinkle M, Sharma N, de Heer WA, Berger C, First PN, Magaud L, Conrad EH. Why multilayer graphene on 4H-SiC(000-1) behaves like a single sheet of graphene. Physical Review Letters, (2008); 100:125504-1-125504-4.
  • [10] Giusca CE, Spenser SJ, Shard AG, Yakimova R, Kazakova O. Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods. Carbon, (2014); 69:221-229.
  • [11] Sharma B, Schumann T, de Oliveira Jr, MH, Lopes ML. Controlled synthesis and characterization of multilayer graphene films on the C-face of silicon carbide. Physica Status Solidi, (2017); 214:1600721-1600728.
  • [12] Ni ZH, Chen W, Fan XF, Kuo JL, Yu T, Wee ATS, Shen ZX. Raman spectroscopy of epitaxial graphene on a SiC substrate. Physical Review B, (2008); 77:115416-1-115416-6.
  • [13] Assender H, Bliznyuk V, Porfyrakis K. How surface topography relates to materials properties. Science (2002); 297:973-976
  • [14] Eastman T, Zhu DM. Adhesion forces between surface-modified AFM tips and a mica surface. Langmuir, (1996); 12:2859-2862.
  • [15] Bhushan B, Israelachvili JN, Landman U. Nanotribology: friction, wear and lubrication at the atomic scale. Nature, (1995); 374:607-616.
  • [16] Ogletree DF, Carpick RW, Salmeron. Calibration of frictional forces in atomic force microscopy. Review of Scientific Instruments, (1996); 97;3298-3306.
  • [17] Sader JE, Larson I, Mulvaney P, White RL. Method for the calibration of atomic force microscope cantilevers. Review of Scientific Instruments, (1995); 66;3789-3798.
  • [18] https://www.spmtips.com/test-structures-TGF11-series.html
  • [19] Varenberg M, Etsion I, Halperin G. An improved wedge calibration method for lateral force in atomic force microscopy. Review of Scientific Instruments, (2003); 74;3362-3367.
  • [20] Mbamara US, Olofinjana B, Ajayi OO, Lorenzo-Martin C, Obiajunwa EJ. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact. Engineering Science and Technology, an International Journal., (2016); 19;956-963.
  • [21] Roy A, Mead J, Wang S, Huang H. Effects of surface defects on the mechanical properties of ZnO nanowires. Scientific Reports, (2017); 7:9547-1-9547-7.
Toplam 21 adet kaynakça vardır.

Ayrıntılar

Bölüm Makaleler
Yazarlar

Özhan Ünverdi Bu kişi benim

Yayımlanma Tarihi 1 Haziran 2018
Yayımlandığı Sayı Yıl 2018 Cilt: 6 Sayı: 2

Kaynak Göster

APA Ünverdi, Ö. (2018). Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor. Eskişehir Teknik Üniversitesi Bilim Ve Teknoloji Dergisi B - Teorik Bilimler, 6(2), 228-234.
AMA Ünverdi Ö. Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor. Estuscience - Theory. Haziran 2018;6(2):228-234.
Chicago Ünverdi, Özhan. “Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor”. Eskişehir Teknik Üniversitesi Bilim Ve Teknoloji Dergisi B - Teorik Bilimler 6, sy. 2 (Haziran 2018): 228-34.
EndNote Ünverdi Ö (01 Haziran 2018) Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor. Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler 6 2 228–234.
IEEE Ö. Ünverdi, “Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor”, Estuscience - Theory, c. 6, sy. 2, ss. 228–234, 2018.
ISNAD Ünverdi, Özhan. “Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor”. Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler 6/2 (Haziran 2018), 228-234.
JAMA Ünverdi Ö. Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor. Estuscience - Theory. 2018;6:228–234.
MLA Ünverdi, Özhan. “Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor”. Eskişehir Teknik Üniversitesi Bilim Ve Teknoloji Dergisi B - Teorik Bilimler, c. 6, sy. 2, 2018, ss. 228-34.
Vancouver Ünverdi Ö. Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor. Estuscience - Theory. 2018;6(2):228-34.