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Gallium Oxide: A Rising Star in The Semiconductor Realm

Year 2019, , 1092 - 1095, 01.12.2019
https://doi.org/10.35378/gujs.647201

Abstract

A “new” semiconductor can gather the interest of the scientific
community only when it adds unprecedented properties to the ones already
established, with silicon universally considered as the most widespread and the
primary benchmark. In the last decades, this happened for example with III-V
and III-N semiconducting compounds, capable of emitting and absorbing light and
to process signals of much higher frequencies than silicon. More recently, this
newly happened with silicon carbide, which can work at higher voltages and
power than previously available semiconductors, and with layered transition
metal dichalcogenides, for their unusual properties and potential applications
in nanoelectronics.

References

  • [1] Roy R., Hill V. G. and Osborn E. F., "Polymorphism of Ga2O3 and the System Ga2O3-H2O", J. Am. Chem. Soc., 74: 719 (1952).[2] Tippins H. H., "Optical Absorption and Photoconductivity in the Band Edge of β- Ga2O3", Phys. Rev., 140: A316–9 (1965).[3] Pearton S. J., Yang J., Cary P. H., Ren F., Kim J., Tadjer M. J. and Mastro M. A., "A review of Ga2O3 materials, processing, and devices", Appl. Phys. Rev., 5: 011301 (2018).[4] Pearton S. J., Ren F., Tadjer M. and Kim J., "Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS", J. Appl. Phys. 124: 220901 (2018).[5] Higashiwaki M. and Jessen G. H., "Guest Editorial: The dawn of gallium oxide microelectronics", Appl.Phys. Lett. 112: 060401 (2018).[6] Teherani F. H., Khodaparast G. A., Xu Y. V., Wu J., Dravid V. P., Pavlidis D., Razeghi M., McClintock R., Rogers D. J., Park J-H. and Magill B. A., "A review of the growth, doping, and applications of Beta- Ga2O3 thin films", Oxide-based Mater. Devices IX 25 (2018).[7] Wellmann P. J., "Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond", Zeitschrift fur Anorg. und Allg. Chemie, 643: 1312–1322 (2017). [8] Pearton S. J., Ren F. and Mastro M., "Gallium Oxide, Technology, Devices, Applications", Paperback ISBN: 9780128145210, eBook ISBN: 9780128145227, Elsevier Press, (2018).[9] Mastro M. A., Kuramata A., Calkins J., Kim J., Ren F. and Pearton S. J., "Perspective - Opportunities and Future Directions for Ga2O3", ECS J. Solid State Sci. Technol., 6 (5): 356-359 (2017).
Year 2019, , 1092 - 1095, 01.12.2019
https://doi.org/10.35378/gujs.647201

Abstract

References

  • [1] Roy R., Hill V. G. and Osborn E. F., "Polymorphism of Ga2O3 and the System Ga2O3-H2O", J. Am. Chem. Soc., 74: 719 (1952).[2] Tippins H. H., "Optical Absorption and Photoconductivity in the Band Edge of β- Ga2O3", Phys. Rev., 140: A316–9 (1965).[3] Pearton S. J., Yang J., Cary P. H., Ren F., Kim J., Tadjer M. J. and Mastro M. A., "A review of Ga2O3 materials, processing, and devices", Appl. Phys. Rev., 5: 011301 (2018).[4] Pearton S. J., Ren F., Tadjer M. and Kim J., "Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS", J. Appl. Phys. 124: 220901 (2018).[5] Higashiwaki M. and Jessen G. H., "Guest Editorial: The dawn of gallium oxide microelectronics", Appl.Phys. Lett. 112: 060401 (2018).[6] Teherani F. H., Khodaparast G. A., Xu Y. V., Wu J., Dravid V. P., Pavlidis D., Razeghi M., McClintock R., Rogers D. J., Park J-H. and Magill B. A., "A review of the growth, doping, and applications of Beta- Ga2O3 thin films", Oxide-based Mater. Devices IX 25 (2018).[7] Wellmann P. J., "Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond", Zeitschrift fur Anorg. und Allg. Chemie, 643: 1312–1322 (2017). [8] Pearton S. J., Ren F. and Mastro M., "Gallium Oxide, Technology, Devices, Applications", Paperback ISBN: 9780128145210, eBook ISBN: 9780128145227, Elsevier Press, (2018).[9] Mastro M. A., Kuramata A., Calkins J., Kim J., Ren F. and Pearton S. J., "Perspective - Opportunities and Future Directions for Ga2O3", ECS J. Solid State Sci. Technol., 6 (5): 356-359 (2017).
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Details

Primary Language English
Journal Section Letter to The Editor
Authors

Matteo Bosi 0000-0001-8992-0249

Roberto Fornari This is me 0000-0002-4499-8015

Publication Date December 1, 2019
Published in Issue Year 2019

Cite

APA Bosi, M., & Fornari, R. (2019). Gallium Oxide: A Rising Star in The Semiconductor Realm. Gazi University Journal of Science, 32(4), 1092-1095. https://doi.org/10.35378/gujs.647201
AMA Bosi M, Fornari R. Gallium Oxide: A Rising Star in The Semiconductor Realm. Gazi University Journal of Science. December 2019;32(4):1092-1095. doi:10.35378/gujs.647201
Chicago Bosi, Matteo, and Roberto Fornari. “Gallium Oxide: A Rising Star in The Semiconductor Realm”. Gazi University Journal of Science 32, no. 4 (December 2019): 1092-95. https://doi.org/10.35378/gujs.647201.
EndNote Bosi M, Fornari R (December 1, 2019) Gallium Oxide: A Rising Star in The Semiconductor Realm. Gazi University Journal of Science 32 4 1092–1095.
IEEE M. Bosi and R. Fornari, “Gallium Oxide: A Rising Star in The Semiconductor Realm”, Gazi University Journal of Science, vol. 32, no. 4, pp. 1092–1095, 2019, doi: 10.35378/gujs.647201.
ISNAD Bosi, Matteo - Fornari, Roberto. “Gallium Oxide: A Rising Star in The Semiconductor Realm”. Gazi University Journal of Science 32/4 (December 2019), 1092-1095. https://doi.org/10.35378/gujs.647201.
JAMA Bosi M, Fornari R. Gallium Oxide: A Rising Star in The Semiconductor Realm. Gazi University Journal of Science. 2019;32:1092–1095.
MLA Bosi, Matteo and Roberto Fornari. “Gallium Oxide: A Rising Star in The Semiconductor Realm”. Gazi University Journal of Science, vol. 32, no. 4, 2019, pp. 1092-5, doi:10.35378/gujs.647201.
Vancouver Bosi M, Fornari R. Gallium Oxide: A Rising Star in The Semiconductor Realm. Gazi University Journal of Science. 2019;32(4):1092-5.